Citation Impact
Citing Papers
2D transition metal dichalcogenides
2017 Standout
High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
2014 Standout
Boron nitride substrates for high-quality graphene electronics
2010 Standout
Two-dimensional flexible nanoelectronics
2014 Standout
Electronics based on two-dimensional materials
2014 Standout
Graphene transistors
2010 Standout
A graphene-based broadband optical modulator
2011 StandoutNature
Black phosphorus field-effect transistors
2014 Standout
Two-Dimensional Transition Metal Carbides
2012 Standout
Single-layer MoS2 transistors
2011 Standout
A fully photonics-based coherent radar system
2014 StandoutNature
Graphene‐Based Materials: Synthesis, Characterization, Properties, and Applications
2011 Standout
Two‐Dimensional Nanocrystals Produced by Exfoliation of Ti3AlC2
2011 Standout
A graphene-based electrochemical device with thermoresponsive microneedles for diabetes monitoring and therapy
2016 Standout
Electronics using hybrid-molecular and mono-molecular devices
2000 StandoutNature
Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics
2014 Standout
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
2012 Standout
Two-dimensional materials and their prospects in transistor electronics
2015
A roadmap for graphene
2012 StandoutNatureNobel
Comparison of steady-state and transient characteristics of lattice-matched and strained InGaAs-AlGaAs (on GaAs) and InGaAs-AlInAs (on InP) quantum-well lasers
1992
Strained layer heterostructures, and their applications to MODFETs, HBTs, and lasers
1993
Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels
2010
Interface‐Engineered Bistable [2]Rotaxane‐Graphene Hybrids with Logic Capabilities
2013 StandoutNobel
Subthreshold current in MODFETs of tenth-micrometer gate
1990 StandoutNobel
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
1994 Standout
Determination of the band offset and the characteristic interdiffusion length in quantum-well lasers using a capacitance–voltage technique
2000
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
2014 Standout
Functionalization of Graphene: Covalent and Non-Covalent Approaches, Derivatives and Applications
2012 Standout
W-band low-noise InAlAs/InGaAs lattice-matched HEMTs
1990
Hole transport across the (Al,Ga)(As,Sb) barrier in InAs–(Al,Ga)(As,Sb) heterostructures
1998 StandoutNobel
Picosecond large-signal switching characteristics of a pseudomorphic AlGaAs/InGaAs modulated doped field effect transistor
1992 StandoutNobel
50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors
1992
Staggered to straddling band lineups in InAs/Al(As, Sb)
1999 StandoutNobel
Investigation of a Class-J Power Amplifier With a Nonlinear $C_{\rm out}$ for Optimized Operation
2010
Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
2012 StandoutScienceNobel
Self-consistent determination of the band offsets inIn As x P 1 − x / InP In As x P 1 − x
1996
Large On-Off Ratios and Negative Differential Resistance in a Molecular Electronic Device
1999 StandoutScience
Review on Recent Progress in Nitrogen-Doped Graphene: Synthesis, Characterization, and Its Potential Applications
2012 Standout
A new RTD-FET logic family
1999
Atomic layer epitaxy—12 years later
1991
GaAs field-effect transistor with an atomically precise ultrashort gate
1991 StandoutNobel
New advances in nanographene chemistry
2015 Standout
Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE
2003 StandoutNobel
DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTs
1989
Microwave performance of a digital alloy barrier Al(Sb,As)/AlSb/InAs heterostructure field-effect transistor
1993 StandoutNobel
Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces
2002 StandoutNobel
Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN
2002 StandoutNobel
Structural and optical properties of strain-relaxed InAsP/InP heterostructures grown by metalorganic vapor phase epitaxy on InP(001) using tertiarybutylarsine
1996
0.12-μm gate III-V nitride HFET's with high contact resistances
1997
Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate length
1988
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
AlInAs-GaInAs HEMTs utilizing low-temperature AlInAs buffers grown by MBE
1989
An improved small-signal equivalent circuit model for III-V nitride MODFET's with large contact resistances
1997 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V
1997
Enhanced modulation bandwidth for strain-compensated InGaAlAs-InGaAsP MQW lasers
1998 StandoutNobel
Gated resonant tunnelling devices
1991
Graphene Transistors: Status, Prospects, and Problems
2013
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
1999 Standout
Broad Family of Carbon Nanoallotropes: Classification, Chemistry, and Applications of Fullerenes, Carbon Dots, Nanotubes, Graphene, Nanodiamonds, and Combined Superstructures
2015 Standout
Recent Advances in Ultrathin Two-Dimensional Nanomaterials
2017 Standout
Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors
1994 StandoutNobel
Transition‐Metal (Co, Ni, and Fe)‐Based Electrocatalysts for the Water Oxidation Reaction
2016 Standout
Microwave photonics combines two worlds
2007 Standout
Conductance of a Molecular Junction
1997 StandoutScience
Heterocyclic Nanographenes and Other Polycyclic Heteroaromatic Compounds: Synthetic Routes, Properties, and Applications
2016 Standout
A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
2012 Standout
Class-J RF power amplifier with wideband harmonic suppression
2011
Subpicosecond photoresponse of carriers in low-temperature molecular beam epitaxial In0.52Al0.48As/InP
1990 StandoutNobel
Epitaxially-grown GaN junction field effect transistors
2000
InAs-AlSb heterostructure field-effect transistors fabricated using argon implantation for device isolation
1990 StandoutNobel
Works of P.J. Tasker being referenced
A novel highly efficient broadband continuous class-F RFPA delivering 74% average efficiency for an octave bandwidth
2011
The role of inefficient charge modulations in limiting the current-gain cutoff frequency of the MODFET
1988
Practical waveform engineering
2009
Electron velocity enhancement by planar-doped barrier source in GaAs vertical FET
1988
An efficient, linear, broadband class-J-mode PA realised using RF waveform engineering
2009
Microwave characterisation of 1 μm-gate AI 0.48 In 0.52 As/Ga 0.47 In 0.53 As/InP MODFETs
1987
0.1 μm gate length MODFETs with unity current gain cutoff frequency above 110 GHz
1988
A novel highly efficient broadband continuous class-F RFPA delivering 74% average efficiency for an octave bandwidth
2011
dc and rf measurements of the kink effect in 0.2 μm gate length AlInAs/GaInAs/InP modulation-doped field-effect transistors
1989
Characterization of ultra-high-speed pseudomorphic AlGaAs/InGaAs (on GaAs) MODFETs
1989
Bias dependence of the MODFET intrinsic model elements values at microwave frequencies
1989
On the Continuity of High Efficiency Modes in Linear RF Power Amplifiers
2009
Optical and microwave performance of GaAs-AlGaAs and strained layer InGaAs-GaAs-AlGaAs graded index separate confinement heterostructure single quantum well lasers
1990
Fabrication and performance of 0.1- mu m gate-length AlGaAs/GaAs HEMTs with unity current gain cutoff frequency in excess of 110 GHz
1988
Control of differential gain, nonlinear gain and damping factor for high-speed application of GaAs-based MQW lasers
1993
Growth of GaAs-Al-GaAs by migration-enhanced epitaxy
1988
Scaling issues for ultra-high-speed HEMTs
1990
0.2- mu m gate-length atomic-planar doped pseudomorphic Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.25/Ga/sub 0.75/As MODFETs with f/sub T/ over 120 GHz
1988
Highly efficient operation modes in GaN power transistors delivering upwards of 81% efficiency and 12W output power
2008
Importance of source and drain resistance to the maximum f/sub T/ of millimeter-wave MODFETs
1989
A Methodology for Realizing High Efficiency Class-J in a Linear and Broadband PA
2009
Kink effect in submicrometer-gate MBE-grown InAlAs/InGaAs/InAlAs heterojunction MESFETs
1988
Digital dynamic frequency dividers for broadband application up to 60 GHz
1993