Citation Impact
Citing Papers
Partial dislocations in wurtzite GaN
2005
High-yield production of graphene by liquid-phase exfoliation of graphite
2008 Standout
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
A GaN bulk crystal with improved structural quality grown by the ammonothermal method
2007 StandoutNobel
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
QM/MM Methods for Biomolecular Systems
2009 Standout
Diffractive Imaging of C 60
2019 StandoutNobel
Raman spectroscopy as a versatile tool for studying the properties of graphene
2013 Standout
Subatomic movements of a domain wall in the Peierls potential
2003 StandoutNatureNobel
Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy
2010 StandoutNobel
Control of strain in GaN using an In doping-induced hardening effect
2001 StandoutNobel
Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study
2002
Superconducting and normal-state properties of heavily hole-doped diamond
2005 StandoutNobel
First-principles calculations for point defects in solids
2014 Standout
The generation of misfit dislocations in facet-controlled growth of AlGaN∕GaN films
2004 StandoutNobel
Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques
2005 StandoutNobel
Yellow and green luminescence in a freestanding GaN template
2001
Luminescence properties of defects in GaN
2005 Standout
The fascinating dynamics of defects in silicon
2001
Making Graphene Luminescent by Oxygen Plasma Treatment
2009 StandoutNobel
Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth
2008 StandoutNobel
High internal and external quantum efficiency InGaN/GaN solar cells
2011 StandoutNobel
Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells
2013 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
In x Ga 1−x N/GaN band offsets as inferred from the deep, yellow-red emission band in InxGa1−xN
1999
Quantized states inGa 1 − x In x N / GaN
2000 StandoutNobel
Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope
2003 StandoutNobel
Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN
2011 StandoutNobel
Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition
1998
The effect of doping and growth stoichiometry on the core structure of a threading edge dislocation in GaN
1998
Electrical activity of chalcogen-hydrogen defects in silicon
2003
Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire
2003 StandoutNobel
Growth and Characterization of p-InGaN/i-InGaN/n-GaN Double-Heterojunction Solar Cells on Patterned Sapphire Substrates
2011
Interpretation of infrared and Raman spectra of amorphous carbon nitrides
2003
Recent advancements in Pt and Pt-free catalysts for oxygen reduction reaction
2015 Standout
Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2) semipolar heteroepitaxy
2011 StandoutNobel
Comprehensive characterization of hydride VPE grown GaN layers and templates
2001
III-V nitrides—important future electronic materials
1999
Dislocation Scattering in GaN
1999
Chemical origin of the yellow luminescence in GaN
2002
Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells
2010 StandoutNobel
Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer
2009 StandoutNobel
Direct observation of localized high current densities in GaN films
1999
Time-resolved luminescence studies of proton-implanted GaN
2009
Epitaxial Lateral Overgrowth of GaN
2001
Synthesis of N-Doped Graphene by Chemical Vapor Deposition and Its Electrical Properties
2009 Standout
The role of threading dislocations in the physical properties of GaN and its alloys
1999
Observation of Moving Dislocation Kinks and Unpinning
1996
Self-consistent-charge density-functional tight-binding method for simulations of complex materials properties
1998 Standout
Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (202¯1) InGaN/GaN heterostructures
2012 StandoutNobel
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Raman spectroscopy of graphene and graphite: Disorder, electron–phonon coupling, doping and nonadiabatic effects
2007 Standout
Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers
2001
Exploration of the active center structure of nitrogen-doped graphene-based catalysts for oxygen reduction reaction
2012 Standout
Origin of hexagonal-shaped etch pits formed in (0001) GaN films
2000
Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra
2013 StandoutNobel
In Search for Structure of Active Site in Iron-Based Oxygen Reduction Electrocatalysts
2006
Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
2009 StandoutNobel
Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies
2011 Standout
Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells
2013 StandoutNobel
Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN
2013 StandoutNobel
GaN epitaxy on thermally treated c-plane bulk ZnO substrates with O and Zn faces
2004
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
2012 StandoutNobel
Yield strength and dislocation mobility in plastically deformed bulk single-crystal GaN
2001
Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates
2012 StandoutNobel
Resistivity control in unintentionally doped GaN films grown by MOCVD
2003
Stacking faults and interface roughening in semipolar (202¯1¯) single InGaN quantum wells for long wavelength emission
2014 StandoutNobel
Electronic properties of dislocations in GaN investigated by scanning tunneling microscopy
2009
Theory of intrinsic and H-passivated screw dislocations in GaN
2002
Ga vacancies and grain boundaries in GaN
2003
Thermal conductivity of GaN films: Effects of impurities and dislocations
2002
Color Control in π-Conjugated Organic Polymers for Use in Electrochromic Devices
2010 Standout
Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence
2001
Temperature dependence of excitonic recombination in lateral epitaxially overgrown InGaN/GaN quantum wells studied with cathodoluminescence
2004
The SIESTA method forab initioorder-Nmaterials simulation
2002 Standout
Hydrogen-related defects in crystalline semiconductors: a theorist's perspective
1995
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
2014 StandoutNobel
High temperature thermoelectric properties of optimized InGaN
2011 StandoutNobel
Ab initiolocal vibrational modes of light impurities in silicon
2002
Do we really understand dislocations in semiconductors?
2000
Numerical determination of one-dimensional energy bands bound to dislocations
1999
Characterization of threading dislocations in GaN epitaxial layers
2000
The Role of Threading Dislocations in the Physical Properties of GaN and its Alloys
2001
Carbon nitride deposited using energetic species: A review on XPS studies
1998
Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy
2008 StandoutNobel
Defect-Related Donors, Acceptors, and Traps in GaN
2001
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Surface energetics, pit formation, and chemical ordering in InGaN alloys
1999
The boron acceptor in diamond
2003
Electronic structures of GaN edge dislocations
2000
Intrinsic electronic structure of threading dislocations in GaN
2002
HYDROGEN IN SEMICONDUCTORS
2006
Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN
2001
Works of Peter Sitch being referenced
Deep acceptors trapped at threading-edge dislocations in GaN
1998
First-principles calculations of the energy barrier to dislocation motion in Si and GaAs
1995
Structures of dislocations in GaAs and their modification by impurities
1994
Nitrogen doping in purelysp 2
1998
Effect of N and B doping on the growth of CVD diamond( 100 ) : H ( 2 × 1 )
1998
1993
First-Principles Calculations of Dislocations in Semiconductors
1993
An Ab Initio Study of the 90° Partial Dislocation Core in Diamond
1997
A theoretical study of boron and nitrogen doping in tetrahedral amorphous carbon
1996
Theory of Threading Edge and Screw Dislocations in GaN
1997
A molecular dynamics study of N-incorporation into carbon systems: Doping, diamond growth and nitride formation
1998