Peter Quigley

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

Luminescence properties of defects in GaN

Impact of Point Defects on the Luminescence Properties of (Al,Ga)N

Mg-O andMg−VNdefect complexes in cubic GaN

Electrical properties of p-type GaN:Mg codoped with oxygen

Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams

Electrical and crystalline properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy

Theoretical investigation of native defects, impurities, and complexes in aluminum nitride

Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques

Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing

Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation

The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals

Observation of Ga vacancies and negative ions in undoped and Mg-doped GaN bulk crystals

First-principles calculations for defects and impurities: Applications to III-nitrides

Molecular doping of gallium nitride