Citation Impact
Citing Papers
Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates
1996
Deep acceptors trapped at threading-edge dislocations in GaN
1998
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Control of strain in GaN using an In doping-induced hardening effect
2001 StandoutNobel
Properties of carbon-doped GaN
2001
Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1−xN/GaN multiple quantum wells
2003 StandoutNobel
Structural defects and microstrain in GaN induced by Mg ion implantation
1998
The generation of misfit dislocations in facet-controlled growth of AlGaN∕GaN films
2004 StandoutNobel
Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques
2005 StandoutNobel
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
2013 StandoutNobel
Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN
2001 StandoutNobel
Luminescence properties of defects in GaN
2005 Standout
High internal and external quantum efficiency InGaN/GaN solar cells
2011 StandoutNobel
Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes
2000 StandoutNobel
The doping process and dopant characteristics of GaN
2002
Nitride-based semiconductors for blue and green light-emitting devices
1997 Nature
A comprehensive review of ZnO materials and devices
2005 Standout
In x Ga 1−x N/GaN band offsets as inferred from the deep, yellow-red emission band in InxGa1−xN
1999
Quantized states inGa 1 − x In x N / GaN
2000 StandoutNobel
Luminescence Related to Stacking Faults in Heterepitaxially Grown Wurtzite GaN
1997 StandoutNobel
Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition
1997
Structural, electrical, and optical properties of defects in Si-doped GaN grown by molecular-beam epitaxy on hydride vapor phase epitaxy GaN on sapphire
2002
Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope
2003 StandoutNobel
Localized quantum well excitons in InGaN single-quantum-well amber light-emitting diodes
2000 StandoutNobel
Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition
1998
The effect of doping and growth stoichiometry on the core structure of a threading edge dislocation in GaN
1998
Photoluminescence and heteroepitaxy of ZnO on sapphire substrate (0001) grown by rf magnetron sputtering
2000
Selective excitation and thermal quenching of the yellow luminescence of GaN
1999
Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire
2003 StandoutNobel
A point defect complex related to the yellow luminescence in electron irradiated GaN
2001
Substitutional and interstitial carbon in wurtzite GaN
2002
Selective excitation of the yellow luminescence of GaN
1999
Extended defects and polarity of hydride vapor phase epitaxy GaN
2002
Cathodoluminescence studies of the deep level emission bands of AlxGa1−xN films deposited on 6H–SiC(0001)
1998 StandoutNobel
III-V nitrides—important future electronic materials
1999
Photoluminescence of GaN: Effect of electron irradiation
1998 StandoutNobel
Scattering of electrons at threading dislocations in GaN
1998
Chemical origin of the yellow luminescence in GaN
2002
Phonon density of states of bulk gallium nitride
1998 StandoutNobel
Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer
2009 StandoutNobel
Low temperature scanning tunneling microscope-induced luminescence of GaN
1998
Point-defect complexes and broadband luminescence in GaN and AlN
1997
Cathodoluminescence study of GaN epitaxial layers
1996
Direct observation of localized high current densities in GaN films
1999
Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN
2001
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
The grain size effects on the photoluminescence of ZnO/α-Al2O3 grown by radio-frequency magnetron sputtering
2000
Effect of laser irradiation on the luminescence of Mg and Si-doped GaN films
1999
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
Evolution of stress relaxation and yellow luminescence in GaN/sapphire by Si incorporation
1997
Properties of the main Mg-related acceptors in GaN from optical and structural studies
2014 StandoutNobel
Simultaneous observation of luminescence and dissociation processes of Mg–H complex for Mg-doped GaN
2002 StandoutNobel
Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (202¯1) InGaN/GaN heterostructures
2012 StandoutNobel
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Time-resolved cathodoluminescence assessment of deep-level transitions in hydride-vapor-phase-epitaxy GaN
2003
Gain spectroscopy on InGaN/GaN quantum well diodes
1997
Effects of stress on phase separation in InxGa1−xN/GaN multiple quantum-wells
2011
The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
1998 StandoutScienceNobel
Origin of defect-related photoluminescence bands in doped and nominally undoped GaN
1999
Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra
2013 StandoutNobel
Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
2009 StandoutNobel
X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms
1999 StandoutNobel
Quantitative analysis of nanoscale electronic properties in an AlxGa1−xN/GaN heterostructure field-effect transistor structure
2001
Luminescence from growth topographic features in GaN:Si films
1998
Luminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate: Spectroscopic characterization and dislocation contrasts
2001
Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy
2005 StandoutNobel
Reversible ultraviolet-induced photoluminescence degradation and enhancement in GaN films
1999
Lateral variations in threshold voltage of an AlxGa1−xN/GaN heterostructure field-effect transistor measured by scanning capacitance spectroscopy
2001
Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
1999 StandoutNobel
Reduction of the defect density in GaN films using ultra-thin AlN buffer layers on 6H-SiC
1997
InGaN-based violet laser diodes
1999 StandoutNobel
InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport
2000 StandoutNobel
Strain-related phenomena in GaN thin films
1996 StandoutNobel
Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence
2001
Temperature dependence of excitonic recombination in lateral epitaxially overgrown InGaN/GaN quantum wells studied with cathodoluminescence
2004
Role of carbon in GaN
2002
Spatial variation of luminescence from AlGaN grown by facet controlled epitaxial lateral overgrowth
2004 StandoutNobel
Study of defects in GaN films by cross-sectional cathodoluminescence
1998
Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy
1998
Atomic arrangement at the AlN/ZrB2 interface
2002 StandoutNobel
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2000 StandoutNature
Impurity states are the origin of yellow-band emission in GaN structures produced by epitaxial lateral overgrowth
1999
Do we really understand dislocations in semiconductors?
2000
Origin of electrons emitted into vacuum from InGaN light emitting diodes
2014 StandoutNobel
The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes
2012 StandoutNobel
Magneto-optical studies of the 0.88-eV photoluminescence emission in electron-irradiated GaN
2000 StandoutNobel
Microstructure and electronic properties of InGaN alloys
2003
Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy
2008 StandoutNobel
Nature of yellow luminescence band in GaN grown on Si substrate
2014 StandoutNobel
Electronic structures of GaN edge dislocations
2000
Valence band discontinuity, surface reconstruction, and chemistry of (0001), (0001), and (1100) 2H–AlN/6H–SiC interfaces
1999 StandoutNobel
Dislocation Luminescence in Wurtzite GaN
1996 StandoutNobel
Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques
2004 StandoutNobel
Theory of Threading Edge and Screw Dislocations in GaN
1997
Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11¯01) semipolar GaN
2011 StandoutNobel
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Nature and elimination of yellow-band luminescence and donor–acceptor emission of undoped GaN
1999
Works of Paul Wright being referenced
Spatial distribution of the luminescence in GaN thin films
1996