Citation Impact
Citing Papers
High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
1995 StandoutNobel
Fabrication and characterization of SiC-AIN alloys
1981
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
2012 Standout
Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
1997 StandoutNobel
High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodes
1994 StandoutNobel
First-principles calculations for point defects in solids
2014 Standout
Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
1997 StandoutNobel
Equation of state of the rocksalt phase of III–V nitrides to 72 GPa or higher
1997 StandoutNobel
Phase Relationships in the Silicon Carbide‐Aluminum Nitride System
1988
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
1996 StandoutNobel
Microstructure, electrical properties, and thermal stability of Ti-based ohmic contacts to n-GaN
1999 StandoutNobel
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
1994 Standout
Silicon Nitride and Related Materials
2000 Standout
A comprehensive review of ZnO materials and devices
2005 Standout
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
1991 StandoutNobel
General principles of growing large-size single crystals of various silicon carbide polytypes
1981
Cleaning of AlN and GaN surfaces
1998 StandoutNobel
Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
1995 StandoutNobel
Solid solutions of AlN and SiC grown by plasma-assisted, gas-source molecular beam epitaxy
1993 StandoutNobel
Binding energy for the intrinsic excitons in wurtzite GaN
1996 StandoutNobel
III–V nitride based light-emitting devices
1997 StandoutNobel
Brillouin scattering study of bulk GaN
1999 StandoutNobel
Interdiffusion in SiC–AlN and AlN–Al 2 OC Systems
1996
Composition and Properties of Hot‐Pressed SiC‐AIN Solid Solutions
1982
Pressure-induced phase transition in SiC
1993 StandoutNobel
Properties of the yellow luminescence in undoped GaN epitaxial layers
1995 StandoutNobel
Epitaxial growth of β-SiC thin films on 6H α-SiC substrates via chemical vapor deposition
1986 StandoutNobel
Preparation of Silicon Carbide/Aluminum Nitride Ceramics Using Organometallic Precursors
1990
Kinetics and gas-surface dynamics of GaN homoepitaxial growth using NH3-seeded supersonic molecular beams
2001 StandoutNobel
Layer-by-layer epitaxial growth of GaN at low temperatures
1993 StandoutNobel
Layer-by-layer growth of SiC at low temperatures
1993 StandoutNobel
Morphology of Phase Separation in AIN─Al 2 OC and SiC─AIN Ceramics
1990
UV photoemission study of heteroepitaxial AlGaN films grown on 6H-SiC
1996 StandoutNobel
Optically pumped lasing of ZnO at room temperature
1997 Standout
Prospects for device implementation of wide band gap semiconductors
1992
Metal Schottky barrier contacts to alpha 6H-SiC
1992 StandoutNobel
Exciton fine structure in undoped GaN epitaxial films
1996 StandoutNobel
Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching
2012 StandoutNobel
Investigation of Phase Stability in the System Sic‐AlN
1983
InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
1996 StandoutNobel
Deposition of highly resistive, undoped, and p-type, magnesium-doped gallium nitride films by modified gas source molecular beam epitaxy
1993 StandoutNobel
Relationships between processing, microstructure and properties of dense and reaction-bonded silicon nitride
1987
Intrinsic exciton transitions in GaN
1998 StandoutNobel
Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation
1997 StandoutNobel
Lateral epitaxy and dislocation density reduction in selectively grown GaN structures
2001 StandoutNobel
Solid solutions and composites in the SiCAlN and SiCBN systems
1985
Strain effects on excitonic transitions in GaN: Deformation potentials
1996 StandoutNobel
Present and future aspects of blue light emitting devices
1997 StandoutNobel
Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction
1998 StandoutNobel
Strain-related phenomena in GaN thin films
1996 StandoutNobel
Microstructure, electrical properties, and thermal stability of Au-based ohmic contacts to p-GaN
1997 StandoutNobel
Polymer‐Derived Ceramics: 40 Years of Research and Innovation in Advanced Ceramics
2010 Standout
Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
1997 StandoutNobel
Electron-beam-induced optical memory effects in GaN
2002 StandoutNobel
InGaN‐based blue/green LEDs and laser diodes
1996 StandoutNobel
Progress and prospects for GaN and the III–V nitride semiconductors
1993
Magneto-optical studies of GaN and GaN/AlxGa1−xN: Donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance
1996 StandoutNobel
Sublimation growth and characterization of bulk aluminum nitride single crystals
1997 StandoutNobel
High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma
1997 StandoutNobel
Valence band discontinuity, surface reconstruction, and chemistry of (0001), (0001), and (1100) 2H–AlN/6H–SiC interfaces
1999 StandoutNobel
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Works of Patrick D. Miller being referenced
New materials in the Si–C–Al–O–N and related systems
1978 Nature
The Reduction of Silica with Carbon and Silicon Carbide
1979