Citation Impact
Citing Papers
High-power multi-megahertz source of waveform-stabilized few-cycle light
2015 StandoutNobel
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
A phase-stabilized carbon nanotube fiber laser frequency comb
2009
Power optimization of XUV frequency combs for spectroscopy applications [Invited]
2011
Quasimonoenergetic Electron Beams with Relativistic Energies and Ultrashort Duration from Laser-Solid Interactions at 0.5 kHz
2009 StandoutNobel
Crosstalk in multicore fibers with randomness: gradual drift vs short-length variations
2012
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
2012 Standout
Cladding-pumped erbium-doped multicore fiber amplifier
2012
Femtosecond Enhancement Cavities in the Nonlinear Regime
2015 StandoutNobel
Growth and applications of Group III-nitrides
1998
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
2014 StandoutNobel
Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
1997 StandoutNobel
Dopant-selective photoenhanced wet etching of GaN
1998
Quantum ground state and single-phonon control of a mechanical resonator
2010 StandoutNatureNobel
Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
1997 StandoutNobel
Patterning of cubic and hexagonal GaN by Cl2/N2-based reactive ion etching
1999
Direct water photoelectrolysis with patterned n-GaN
2007 StandoutNobel
Recessed gate GaN MODFETs
1997 StandoutNobel
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
1994 Standout
Ga-doping effects on electrical and luminescent properties of ZnO:(La,Eu)OF red phosphor thin films
2003 StandoutNobel
Removal of thick (>100nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching
2004 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
Cleaning of AlN and GaN surfaces
1998 StandoutNobel
First demonstration of multimode amplifier for spatial division multiplexed transmission systems
2011
Ion implantation in group III-nitride semiconductors: a tool for doping and defect studies
1997
Highly anisotropic photoenhanced wet etching of n-type GaN
1997
Binding energy for the intrinsic excitons in wurtzite GaN
1996 StandoutNobel
Phonon density of states of bulk gallium nitride
1998 StandoutNobel
Visible resonant modes in GaN-based photonic crystal membrane cavities
2006 StandoutNobel
Third order nonlinearities in Ge-As-Se-based glasses for telecommunications applications
2004
Terabit-Scale Orbital Angular Momentum Mode Division Multiplexing in Fibers
2013 StandoutScience
Properties of the yellow luminescence in undoped GaN epitaxial layers
1995 StandoutNobel
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
High Repetition Rate Gigawatt Peak Power Fiber Laser Systems: Challenges, Design, and Experiment
2009
Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching
2004 StandoutNobel
Measurement of multipath interference in the coherent crosstalk regime
2003
Ultrathin Organic Films Grown by Organic Molecular Beam Deposition and Related Techniques
1997 Standout
Optical activation of Be implanted into GaN
1998 StandoutNobel
Probing the AlxGa1−xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale
2002 StandoutNobel
Chlorine-Based Plasma Etching of GaN
1996
Multiphoton Absorbing Materials: Molecular Designs, Characterizations, and Applications
2008 Standout
Enhancing optical communications with brand new fibers
2012
Intrinsic exciton transitions in GaN
1998 StandoutNobel
GaN: Processing, defects, and devices
1999
Variation of GaN valence bands with biaxial stress and quantification of residual stress
1997 StandoutNobel
Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation
1997 StandoutNobel
Emerging gallium nitride based devices
1995
Strain effects on excitonic transitions in GaN: Deformation potentials
1996 StandoutNobel
Investigation of the initial chemisorption and reaction of fluorine (XeF2) with the GaN(0001)-(1 × 1) surface
1997
Space-division multiplexing in optical fibres
2013 Standout
On the synthesis and manipulation of InAs quantum dots
2000
Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction
1998 StandoutNobel
Broad-area photoelectrochemical etching of GaN
1997
Advances in MOVPE, MBE, and CBE
1992
Strain-related phenomena in GaN thin films
1996 StandoutNobel
Size Series of Small Indium Arsenide−Zinc Selenide Core−Shell Nanocrystals and Their Application to In Vivo Imaging
2006 StandoutNobel
Influence of potential fluctuations on electrical transport and optical properties in modulation-dopedG a N / A l 0.28 Ga 0.72 N
1998 StandoutNobel
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
Group III nitride semiconductors for short wavelength light-emitting devices
1998
Smooth n-type GaN surfaces by photoenhanced wet etching
1998
Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
1997 StandoutNobel
Electron-beam-induced optical memory effects in GaN
2002 StandoutNobel
Growth and characterization of cubic GaN
1997
Hydrogenation of GaN, AlN, and InN
1994
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2000 StandoutNature
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
InGaN‐based blue/green LEDs and laser diodes
1996 StandoutNobel
Magneto-optical studies of GaN and GaN/AlxGa1−xN: Donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance
1996 StandoutNobel
Photoelectrochemical etching of p-type GaN heterostructures
2009 StandoutNobel
Observation of highly dispersive surface states on GaN(0001)1×1
1999 StandoutNobel
High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma
1997 StandoutNobel
Evolution and systems impact of coherent distributed multipath interference
2004 Nobel
Substrates for gallium nitride epitaxy
2002
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Works of P. Wisk being referenced
Light propagation with ultralarge modal areas in optical fibers
2006
All-fiber, octave-spanning supercontinuum
2003
Anomalous dispersion in a solid, silica-based fiber
2006
High-energy (nanojoule) femtosecond pulse delivery with record dispersion higher-order mode fiber
2005
Amplification and noise properties of an erbium-doped multicore fiber amplifier
2011
Reversible changes in doping of InGaAlN alloys induced by ion implantation or hydrogenation
1993
Thermal stability of Ti/Pt/Au nonalloyed ohmic contacts on InN
1994
Alternative group V sources for growth of GaAs and AlGaAs by MOMBE (CBE)
1992
Structural characterization of GaN and GaAsxN1−x grown by electron cyclotron resonance-metalorganic molecular beam epitaxy
1994
Growth of InN for ohmic contact formation by electron cyclotron resonance metalorganic molecular-beam epitaxy
1993
Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxy
1993
All-fiber grating-based higher order mode dispersion compensator for broad-band compensation and 1000-km transmission at 40 Gb/s
2001
Dry etching of thin-film InN, AlN and GaN
1993
Growth of GaAs/AlGaAs HBTs by MOMBE (CBE)
1992
Tunable dispersion compensators utilizing higher order mode fibers
2003 Nobel