Citation Impact

Citing Papers

Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Time Resolved Fano Resonances
2005 StandoutNobel
Nanomaterials with enzyme-like characteristics (nanozymes): next-generation artificial enzymes
2013 Standout
Dopant-mediated oxygen vacancy tuning in ceria nanoparticles
2009
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Interface segregation and clustering in strained-layer InGaAs/GaAs heterostructures studied by cross-sectional scanning tunneling microscopy
1994
Temperature dependence of the photoreflectance of a strained layer (001) In0.21Ga0.79As/GaAs single quantum well
1991
Raman scattering study of InAs/GaInSb strained layer superlattices
1991 StandoutNobel
CeO2 Surface Oxygen Vacancy Concentration Governs in Situ Free Radical Scavenging Efficacy in Polymer Electrolytes
2012
Enhanced Carrier Lifetimes and Suppression of Midgap States in GaAs at a Magnetic Metal Interface
1997
Dynamics of coherent phonons in bismuth generated by ultrashort laser pulses
1998
Spintronics: Fundamentals and applications
2004 Standout
Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaN/sapphire substrates
2002 StandoutNobel
Raman scattering study of GaN films
1996
X-ray induced photoemission of a localized electron and its application to site-selective x-ray absorption fine structure measurement
2000 StandoutNobel
Study of strain and disorder of InxGa1−xP/(GaAs, graded GaP) (0.25≤x≤0.8) using spectroscopic ellipsometry and Raman spectroscopy
1994
New Insights into Perfluorinated Sulfonic-Acid Ionomers
2017 Standout
Photoluminescence and Raman Scattering from Catalytically Grown ZnxCd1-xSe Alloy Nanowires
2006
Analysis of band bending at III–V semiconductor interfaces by Raman spectroscopy
1993
Modulated photoabsorption in strainedGa1xInxAs/GaAs multiple quantum wells
1991 StandoutNobel
Phonon dispersions inGaxAl1xAs alloys
1990
Binding energy for the intrinsic excitons in wurtzite GaN
1996 StandoutNobel
Dependence of conduction-band effective mass on quaternary alloy composition of (In0.52Al0.48As)z(In0.53Ga0.47As)1−z lattice matched to InP
1993
Phonon density of states of bulk gallium nitride
1998 StandoutNobel
Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectricGa1xInxN/GaNquantum-well structures
2000 StandoutNobel
Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces
2012 Standout
Raman Analysis Of AlxGa1-xN Films
1997 Nobel
Raman analysis of phonon lifetimes in AlN and GaN of wurtzite structure
1999 StandoutNobel
GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
1985 Standout
Optical properties of wurtzite GaN epilayers grown onA-plane sapphire
1998 StandoutNobel
Optical properties of GaN epilayers on sapphire
1996
Photoreflectance of GaAs and Ga0.82Al0.18As at elevated temperatures up to 600 °C
1988
Investigation of optical properties of interfaces between heavily doped Al0.48In0.52As:Si and InP (Fe) substrates by photoreflectance analysis
1999
Determination of the spin-exchange interaction constant in wurtzite GaN
1998 StandoutNobel
Raman spectroscopy of low-dimensional semiconductors
1988
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
Temperature dependence of the dielectric function and the interband critical-point parameters ofAlxGa1xAs
1991
Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate
2011 StandoutNobel
Raman analysis of the E1 and A1 quasi-longitudinal optical and quasi-transverse optical modes in wurtzite AlN
1999 StandoutNobel
The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films
2004
Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers
2012 StandoutNobel
Atomic layer epitaxy of GaInP ordered alloy
1990
Raman analysis of the configurational disorder in AlxGa1−xN films
1997 StandoutNobel
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Band gaps and spin-orbit splitting of ordered and disorderedAlxGa1xAsandGaAsxSb1xalloys
1989
Determination of polarization field in a semipolar (112¯2) InGa∕GaN single quantum well using Franz–Keldysh oscillations in electroreflectance
2009 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Raman study ofCeO2: Second-order scattering, lattice dynamics, and particle-size effects
1993
Piezoelectric Franz–Keldysh effect in strained GaInN/GaN heterostructures
1999 StandoutNobel
Temperature dependence of photoreflectance line shapes in multiple quantum wells
1987
Probing the AlxGa1−xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale
2002 StandoutNobel
Electronic structure of ZnS, ZnSe, ZnTe, and their pseudobinary alloys
1987
Intrinsic exciton transitions in GaN
1998 StandoutNobel
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
2009 StandoutNobel
Atomic bonding and thermodynamic properties of pseudo-binary semiconducting alloys
1987
Electronic properties of random alloys: Special quasirandom structures
1990 Standout
Photoluminescence of AlInAs under hydrostatic pressure
1989
Photoreflectance and photoreflectance-excitation spectroscopy of a GaAs/Ga0.67Al0.33As multiple-quantum-well structure
1987
Optically detected cyclotron resonance measurements in Al0.48In0.52As MBE layers
1989
Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well
2009 StandoutNobel
Temperature dependence of the direct band gap ofInxGa1xAs (x=0.06 and 0.15)
1991
Phonons and related crystal properties from density-functional perturbation theory
2001 Standout
Quantum size effects in Raman spectra of Si nanocrystals
2011
Atomic Scale Indium Distribution in a GaN/In0.43Ga0.57N/Al0.1Ga0.9N Quantum Well Structure
1997 StandoutNobel
Influence of the interface composition of InAs/AlSb superlattices on their optical and structural properties
1995 StandoutNobel
Bond relaxation phenomenon and impurity modes frequencies in III–V compounds
1985
Nanostructured Oxides in Chemistry:  Characterization and Properties
2004
Piezo-photoreflectance of the direct gaps of GaAs and Ga0.78Al0.22As
1990
Recent Advances in Ultrathin Two-Dimensional Nanomaterials
2017 Standout
Photoreflectance modulation mechanisms in GaAs-AlxGa1xAs multiple quantum wells
1987
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
2004 StandoutNobel
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
Raman and x-ray studies of Ce1−xRExO2−y, where RE=La, Pr, Nd, Eu, Gd, and Tb
1994 Standout
Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices
1993
Interband transitions from the photoreflectance of GaSb/AlSb multiple quantum wells
1989 Nobel
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
Nanosize Ti–W Mixed Oxides: Effect of Doping Level in the Photocatalytic Degradation of Toluene Using Sunlight-Type Excitation
2002
Temperature dependence of the Eo and Eo + △o gaps of InP up to 600°C
1990
Advanced Nanoarchitectures for Solar Photocatalytic Applications
2011 Standout
Raman scattering in In1−xGaxAsyP1−y quaternary alloys
1986
Raman scattering from GexSi1−x/Si strained-layer superlattices
1984
Negative spin-orbit bowing in semiconductor alloys
1989
Effects of defect scattering on the photoluminescence of exciton-polaritons in n-GaN
1998 StandoutNobel
Chemical Management for Colorful, Efficient, and Stable Inorganic–Organic Hybrid Nanostructured Solar Cells
2013 Standout
Nanodiamond Size from Low-Frequency Acoustic Raman Modes
2022 StandoutNobel
Two-dimensional transition metal dichalcogenide alloys: preparation, characterization and applications
2015
Band parameters for nitrogen-containing semiconductors
2003 Standout
Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy
1992
Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiscibility
1993 StandoutNobel
Disclosing the Complex Structure of UiO-66 Metal Organic Framework: A Synergic Combination of Experiment and Theory
2011 Standout
Photoreflectance, absorption, and nuclear resonance reaction studies of AlxGa1−x As grown by molecular-beam epitaxy
1988

Works of P. Parayanthal being referenced

New normalization procedure for modulation spectroscopy
1987
Composition dependence of the spin-orbit splittings in lattice-matched quaternary alloys: Generalized Van Vechten-Berolo-Woolley model
1983
Photoreflectance study of GaAs/AlAs superlattices: Fit to electromodulation theory
1986
Electroreflectance and photoreflectance study of the space-charge region in semiconductors: (In-Sn-O)/InP as a model system
1988
Photoreflectance of GaAs doping superlattices
1986
Raman Scattering in Alloy Semiconductors: "Spatial Correlation" Model
1984
Observation of symmetery forbidden transitions in the room temperature photoreflectance spectrum of a GaAs/GaAlAs multiple quantum well
1986
Photoreflectance of GaAs/GaAlAs multiple quantum wells: Topographical variations in barrier height and well width
1986
Electroreflectance investigation of (Ga1−xAlx)0.47In0.53As lattice matched to InP
1983
Improvement of optical characteristics of Al0.48In0.52As grown by molecular beam epitaxy
1985
Photoreflectance characterization of the space charge region in semiconductors: indium tin oxide on InP as a model system
1987
Raman scattering characterization of Ga1−xAlxAs/GaAs heterojunctions: Epilayer and interface
1982
Generic degradation mechanism for 980 nm InxGa1−xAs/GaAs strained quantum-well lasers
2001
Rankless by CCL
2026