Standout Papers

Γ-X Tunnelling in GaAs/AlAs/GaAs Heterostructure 1998 2026 2007 2016 5
  1. Γ-X Tunnelling in GaAs/AlAs/GaAs Heterostructure (1998)
    Е. Е. Вдовин, Kostya S. Novoselov et al. Japanese Journal of Applied Physics

Citation Impact

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Works of P. Omling being referenced

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Room-temperature and 50 GHz operation of a functional nanomaterial
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Electrical properties of Fe in GaAs
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Electron-electron interaction in a narrow, disordered electron gas in nonequilibrium
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