Standout Papers
Citation Impact
Citing Papers
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas
2016 StandoutNobel
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Optical Nonreciprocal Devices with a Silicon Guiding Layer Fabricated by Wafer Bonding
2003
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Applications of magneto-optical waveguides in integrated optics: review
2005
Physics of high-power InGaN/GaN lasers
2002 StandoutNobel
Fractional quantum Hall states at1 3 5 2
2011 StandoutNobel
Electronic structure calculations with dynamical mean-field theory
2006 Standout
High quality quantum wells of InGaP/GaAs grown by molecular beam epitaxy
1989
Calculation of InAs/AlSb(001) band offsets: Effect of strain and interfacial atomic structure
1993
Precision measurement of parity nonconservation in cesium
1999 StandoutNobel
Synthesis and microstructure of gallium phosphide nanowires
2001
Ordered GaInP by atomic layer epitaxy
1991
Optoelectronic devices based on III-V compound semiconductors which have made a major scientific and technological impact in the past 20 years
2000
Current analysis of polyimide passivated InGaP/GaAs HBT
1996
Relativistic generation of isolated attosecond pulses: a different route to extreme intensity
2005 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
2007 Standout
Hexagonal ferrites: A review of the synthesis, properties and applications of hexaferrite ceramics
2012 Standout
X-ray photoemission characterization of interface abruptness and band offset of Ga0.5In0.5P grown on GaAs
1998
Atomic Layer Deposition: An Overview
2009 Standout
Metal hydride materials for solid hydrogen storage: A review☆
2007 Standout
Quantum fluids of light
2013 Standout
Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding
2006 StandoutNobel
Multiple quantum well (MQW) waveguide modulators
1988
Many-body physics with ultracold gases
2008 Standout
The density-matrix renormalization group
2005 Standout
Evidences of non-commutativity and non-transitivity of band discontinuities in InP-Al(In)As-Ga(In)As heterostructures
1993
High-resolution Z-contrast imaging of crystals
1991 Standout
Electrooptic modulation in polar growth axis InGaAs/GaAs multiple quantum wells
1991 StandoutNobel
Complete optical isolation created by indirect interband photonic transitions
2009 Standout
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
Optical investigations of GaAs-GaInP quantum wells and superlattices grown by metalorganic chemical vapor deposition
1991
Atomic Layer Epitaxy
1984
YIG magnonics
2010 Standout
Phosphors in phosphor-converted white light-emitting diodes: Recent advances in materials, techniques and properties
2010 Standout
Parity–time-symmetric whispering-gallery microcavities
2014 Standout
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
One‐Dimensional Nanostructures: Synthesis, Characterization, and Applications
2003 Standout
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Ultrathin Organic Films Grown by Organic Molecular Beam Deposition and Related Techniques
1997 Standout
Probing the AlxGa1−xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale
2002 StandoutNobel
GaAs Atomic Layer Epitaxy Using the KrF Excimer Laser
1989
Colloquium: Area laws for the entanglement entropy
2010 Standout
Local atomic structure in strained interfaces ofIn x Ga 1 − x A s / I n P
1998
Conduction-band discontinuity in InGaP/GaAs measured using both current-voltage and photoemission methods
1992
Frequency resolved admittance spectroscopy measurements on In0.52Al0.48As/InxGa1−xAs/In0.52Al0.48As single quantum well structures
1994
Hydrogen storage in Ti-based quasicrystal powders produced by mechanical alloying
2005
Advances in MOVPE, MBE, and CBE
1992
Ultracold atomic gases in optical lattices: mimicking condensed matter physics and beyond
2007 Standout
Automatic rotating element ellipsometers: Calibration, operation, and real-time applications
1990
Influence of the interface composition of InAs/AlSb superlattices on their optical and structural properties
1995 StandoutNobel
Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integration
1990
Empirical low-field mobility model for III–V compounds applicable in device simulation codes
2000
Band offsets ofGa 0.5 In 0.5
1993
Band discontinuities inIn x Ga 1 − x Al y In 1 − y
1997
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
2004 StandoutNobel
Ferrite films for microwave and millimeter-wave devices
1988
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
Effects of the interface bonding type on the optical and structural properties of InAs-AlSb quantum wells
1994 StandoutNobel
Atomic layer epitaxy of III–V compounds in a hydride vapor phase system
1990
Colloquium: Nonequilibrium dynamics of closed interacting quantum systems
2011 Standout
Band parameters for nitrogen-containing semiconductors
2003 Standout
Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy
1992
Disclosing the Complex Structure of UiO-66 Metal Organic Framework: A Synergic Combination of Experiment and Theory
2011 Standout
Works of P. Maurel being referenced
Monolayer epitaxy of III-V compounds by low-pressure metalorganic chemical vapor deposition
1987
Direct determination of the valence-band offsets at Ga0.47In0.53As/InP and InP/Ga0.47In0.53As heterostructures by ultraviolet photoemission spectroscopy
1992
INTERACTIONS OF Si (III) SURFACE WITH H2, NH3, SiH4 MULTIPOLAR PLASMAS STUDIED BY IN SITU ELLIPSOMETRY
1983
Ga0.51In0.49P/GaxIn1-xAs lattice-matched (x=1) and strained (x=0.85) two-dimensional electron gas field-effect transistors
1991
Fractionally charged excitations in the charge density wave state of a quarter-filled t-J chain with quantum phonons
2001
A high quantum efficiency GaInAs-InP photodetector-on-silicon substrate
1989
First observation of the two-dimensional properties of the electron gas in Ga0.49In0.51P/GaAs heterojunctions grown by low pressure metalorganic chemical vapor deposition
1986
GaInAs/InP and GaInP/GaAs (100) interfaces: An ultraviolet photoelectron spectroscopy study
1992
First GaInAsP-InP double-heterostructure laser emitting at 1.27 μm on a silicon substrate
1988
Mg doping of GaInP grown by chemical beam epitaxy using bis-cyclopentadienyl magnesium
1994
Chemical beam epitaxy growth of GaAs/Ga0.5In0.5P heterostructures: growth kinetics, electrical and optical properties
1991
High Power Broad Area GaInAs/GaAs/GaInP Lasers Grown by CBE for Pumping Er Doped Glasses
1993
High-quality GaAs/Ga0.49In0.51P superlattices grown on GaAs and silicon substrates by low-pressure metalorganic chemical vapor deposition
1988
First observation of two-dimensional hole gas in a Ga0.47In0.53As/InP heterojunction grown by metalorganic vapor deposition
1986
First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate
1988
Room-temperature excitons in Ga0.47In0.53As-InP superlattices grown by low-pressure metalorganic chemical vapor deposition
1986
Growth of GaInAs-InP multiquantum wells on garnet (GGG=Gd3Ga5O12) substrate by metalorganic chemical vapor deposition
1986
Very high purity InP epilayer grown by metalorganic chemical vapor deposition
1988
High performance GaAs/GaInP heterostructure bipolar transistors grown by low-pressure metal-organic chemical vapour deposition
1990
Metal-organic molecular beam epitaxy of GaAs and Ga0.5In0.5P
1991