Standout Papers
Citation Impact
Citing Papers
Terahertz spectroscopy and imaging – Modern techniques and applications
2010 Standout
Gate Control of Spin-Orbit Interaction in an Inverted In 0.53 a 0.47 n 0.52 l 0.48
1997 Standout
Photodetectors based on graphene, other two-dimensional materials and hybrid systems
2014 Standout
Graphene transistors
2010 Standout
Calculated signal-to-noise ratio of MRI detected with SQUIDs and Faraday detectors in fields from 10μT to 1.5T
2007 StandoutNobel
High speed terahertz modulation from metamaterials with embedded high electron mobility transistors
2011
SQUID-Based Microwave Cavity Search for Dark-Matter Axions
2010 StandoutNobel
Mutation of the mouse klotho gene leads to a syndrome resembling ageing
1997 StandoutNature
Search for Hidden Sector Photons with the ADMX Detector
2010 StandoutNobel
Human Growth Hormone and Human Aging
1993
Myocardial Substrate Metabolism in the Normal and Failing Heart
2005 Standout
From metamaterials to metadevices
2012 Standout
Effects of a Growth Hormone-Releasing Hormone Analog on Endogenous GH Pulsatility and Insulin Sensitivity in Healthy Men
2010
Optical-field-induced current in dielectrics
2012 StandoutNatureNobel
Two-dimensional materials and their prospects in transistor electronics
2015
A review of metasurfaces: physics and applications
2016 Standout
AASLD Practice Guidance on the clinical assessment and management of nonalcoholic fatty liver disease
2023 Standout
Device Requirements for Optical Interconnects to Silicon Chips
2009 Standout
Microstrip superconducting quantum interference device radio-frequency amplifier: Tuning and cascading
1999 StandoutNobel
CMOS Low-Noise Amplifier Design Optimization Techniques
2004 Standout
Pathophysiology of the Neuroregulation of Growth Hormone Secretion in Experimental Animals and the Human*
1998 Standout
Ohmic Contact of Cadmium Oxide, a Transparent Conducting Oxide, to n-type Indium Phosphide
2011
Optoelectronic applications of LTMBE III–V materials
1993
Dielectrics for GaN Based MIS-Diodes
1997
Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current
1993
Highly confined two-dimensional electron gas in an In0.52AI0.48As/In0.52Ga0.47As modulation-doped structure with a strained InAs quantum well
1996
Subthreshold current in MODFETs of tenth-micrometer gate
1990 StandoutNobel
Optoelectronic transient characterization of ultrafast devices
1992 StandoutNobel
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
2014 Standout
Microwave cavity searches for dark-matter axions
2003 StandoutNobel
Surface photovoltage phenomena: theory, experiment, and applications
1999 Standout
50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors
1992
Magneto-transport in InAs/AlSb quantum wells with large electron concentration modulation
1992 StandoutNobel
GaAs field-effect transistor with an atomically precise ultrashort gate
1991 StandoutNobel
Assessment of HgCdTe photodiodes and quantum well infrared photoconductors for long wavelength focal plane arrays
1999
Charge redistribution at GaN–Ga2O3 interfaces: a microscopic mechanism for low defect density interfaces in remote-plasma-processed MOS devices prepared on polar GaN faces
2000 StandoutNobel
SQUIDs: THEN AND NOW
2010 StandoutNobel
Magneto-Hall characterization of delta-doped pseudomorphic high electron mobility transistor structures
1994
DC SQUID series array amplifiers with 120 MHz bandwidth (corrected)
2001 StandoutNobel
Magnetoencephalography—theory, instrumentation, and applications to noninvasive studies of the working human brain
1993 Standout
DC SQUID series array amplifiers with 120 MHz bandwidth
2001 StandoutNobel
Design and performance of the ADMX SQUID-based microwave receiver
2011 StandoutNobel
Microwave performance of a digital alloy barrier Al(Sb,As)/AlSb/InAs heterostructure field-effect transistor
1993 StandoutNobel
Superconducting quantum interference devices: State of the art and applications
2004 StandoutNobel
Investigation and reduction of excess low-frequency noise in rf superconducting quantum interference devices
1994 StandoutNobel
Transistor oscillator and amplifier grids
1992
A reliable method for extraction of material parameters in terahertz time-domain spectroscopy
1996 Standout
High-transition-temperature superconducting quantum interference devices
1999 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
All‐Solid‐State Z‐Scheme Photocatalytic Systems
2014 Standout
High Gm In0.5Al0.5As/In0.5Ga0.5As high electron mobility transistors grown lattice-mismatched on GaAs substrates
1995
Ultrahigh-bandwidth vector network analyzer based on external electro-optic sampling
1992 StandoutNobel
Effect of high magnetic fields on the noise temperature of a heterostructure field-effect transistor low-noise amplifier
1997
RF transistors: Recent developments and roadmap toward terahertz applications
2007
A temperature noise model for extrinsic FETs
1992
Infrared detectors: status and trends
2003 Standout
The benefits of ultrashort optical pulses in optically interconnected systems
2003
SQUID magnetometers for low-frequency applications
1989
Radio-frequency amplifier based on a niobium dc superconducting quantum interference device with microstrip input coupling
1998 StandoutNobel
X-band MMIC amplifier with pulse-doped GaAs MESFET's
1991
High-transconductance InAs/AlSb heterojunction field-effect transistors with delta -doped AlSb upper barriers
1992 StandoutNobel
The superconducting quantum interference device microstrip amplifier: Computer models
2000 StandoutNobel
Ultra-high speed modulation-doped field-effect transistors: a tutorial review
1992
Drastic reduction of gate leakage in InAlAs/InGaAs HEMT's using a pseudomorphic InAlAs hole barrier layer
1994
Improved sensitivity of planar microwave based RF-SQUIDs using a cryogenic HEMT preamplifier
1993
Recent Advances in Ultrathin Two-Dimensional Nanomaterials
2017 Standout
Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid
1996 Standout
Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors
1994 StandoutNobel
Terahertz technology
2002 Standout
Picosecond pulse propagation on coplanar striplines fabricated on lossy semiconductor substrates: modeling and experiments
1993 StandoutNobel
Optical study of segregation effects on the electronic properties of molecular-beam-epitaxy grown (In,Ga)As/GaAs quantum wells
1997
Domain wall creep in (Ga,Mn)As
2010 StandoutNobel
Influence of impact ionization on the drain conductance in InAs-AlSb quantum well heterostructure field-effect transistors
1995 StandoutNobel
Improving the characteristics of an inverted HEMT by inserting an InAs layer into the InGaAs channel
1995
Highly resistive annealed low-temperature-grown InGaAs with sub-500fs carrier lifetimes
2004
Ultra-submicrometer-gate AlGaAs/GaAs HEMTs
1990
InAs-AlSb heterostructure field-effect transistors fabricated using argon implantation for device isolation
1990 StandoutNobel
Surface photovoltage spectroscopy of InxAl1−xAs epilayers
1995
Works of P. Ho being referenced
Long Term Pulsatile Growth Hormone (GH)-Releasing Hormone Therapy in Children With GH Deficiency*
1988
Novel pseudomorphic high electron mobility transistor structures with GaAs-In0.3Ga0.7As thin strained superlattice active layers
1989
High-performance InP-based HEMT millimeter-wave low-noise amplifiers
2003
InxGa1−xAs (x=0.25–0.35) grown at low temperature
1993
A 0.25- mu m gate-length pseudomorphic HFET with 32-mW output power at 94 GHz
1989
W-band low-noise InAlAs/InGaAs lattice-matched HEMTs
1990
High-speed photodetector applications of GaAs and InxGa1−xAs/GaAs grown by low-temperature molecular beam epitaxy
1993 StandoutNobel
Very high power-added efficiency and low-noise 0.15- mu m gate-length pseudomorphic HEMTs
1989
W-band high efficiency InP-based power HEMT with 600 GHz f/sub max/
1995
DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTs
1989
A 0.15 mu m gate-length pseudomorphic HEMT
2003
A voltage-tunable multicolor triple-coupled InGaAs/GaAs/AlGaAs quantum-well infrared photodetector for 8–12 μm detection
1996
Ultra-low-noise cryogenic high-electron-mobility transistors
1988
32-GHz cryogenically cooled HEMT low-noise amplifiers
1989
Ultrafast long-wavelength photodetectors fabricated on low-temperature InGaAs on GaAs
1993
A super low-noise 0.1 mu m T-gate InAlAs-InGaAs-InP HEMT
1991
Extremely high gain 0.15 μm gate-length InAlAs/InGaAs/InP HEMTs
1991
Pseudomorphic InGaAs high electron mobility transistors
1993
94 GHz low-noise HEMT
1989