P. Calvel

Radiation-induced soft errors in advanced semiconductor technologies

Basic mechanisms and modeling of single-event upset in digital microelectronics

Low field leakage current and soft breakdown in ultra-thin gate oxides after heavy ions, electron or X-ray irradiation

Total ionizing dose effects in MOS oxides and devices

Cosmic and terrestrial single-event radiation effects in dynamic random access memories

Single particle-induced latchup

Total ionizing dose effects in bipolar devices and circuits

Characterization of enhanced low dose rate sensitivity (ELDRS) effects using Gated Lateral PNP transistor structures

Precursor ion damage and angular dependence of single event gate rupture in thin oxides

Single event upset at ground level

Single-event gate rupture in vertical power MOSFETs; an original empirical expression

Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs

Simulation technologies for cosmic ray neutron-induced soft errors: Models and simulation systems

Impact of oxide thickness on SEGR failure in vertical power MOSFETs; development of a semi-empirical expression

Radiation Effects in MOS Oxides

Destructive single-event effects in semiconductor devices and ICs

Comparison of experimental measurements of power MOSFET SEBs in dynamic and static modes

Measurement of a cross-section for single-event gate rupture in power MOSFETs

Temperature and angular dependence of substrate response in SEGR [power MOSFET]

Charge generation by heavy ions in power MOSFETs, burnout space predictions and dynamic SEB sensitivity

Space radiation evaluation of 16 Mbit DRAMs for mass memory applications

Implementation of total dose effects in the bipolar junction transistor Gummel-Poon model

Effects of reliability screening tests on bipolar integrated circuits during total dose irradiation

An empirical model for predicting proton induced upset

Total dose effects on gate controlled lateral PNP bipolar junction transistors

Experimental evidence of the temperature and angular dependence in SEGR [power MOSFET]