Citation Impact
Citing Papers
The influence of interelectronic collisions on conduction and breakdown in polar crystals
1958
Tunnel field-effect transistors as energy-efficient electronic switches
2011 StandoutNature
Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
2014 Standout
Attosecond nonlinear polarization and light–matter energy transfer in solids
2016 StandoutNatureNobel
Optical-field-induced current in dielectrics
2012 StandoutNatureNobel
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2004 StandoutNature
Image force interactions at the interface between an insulator and a semiconductor
1974
Dislocation pinning effect of oxygen atoms in silicon
1977
The surface and materials science of tin oxide
2005 Standout
Photothermal Effect in Semiconductors
1961
Covalency Criterion for Localized vs Collective Electrons in Oxides with the Perovskite Structure
1966 StandoutNobel
Metal-insulator transitions
1998 Standout
Electroluminescence atp-nJunctions in Gallium Phosphide
1961
LO-phonon oscillations and electron freeze-out in transport through In-InP and Sn-InP contacts
1987 StandoutNobel
Spintronics: Fundamentals and applications
2004 Standout
Quantum size effects in the redox potentials, resonance Raman spectra, and electronic spectra of CdS crystallites in aqueous solution
1983 StandoutNobel
Intriguing Optoelectronic Properties of Metal Halide Perovskites
2016 Standout
n-n Semiconductor heterojunctions
1963
Maximum Metallic Resistance in Thin Wires
1977 StandoutNobel
Electron localization in polyaniline derivatives
1990 StandoutNobel
Excited electronic states and optical spectra of ZnS and CdS crystallites in the ≊15 to 50 Å size range: Evolution from molecular to bulk semiconducting properties
1985 StandoutNobel
New method for a scaling theory of localization
1980 StandoutNobel
Localized vs Collective Descriptions of Magnetic Electrons
1968 StandoutNobel
Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces
2012 Standout
Band-gap narrowing in heavily doped many-valley semiconductors
1981
Ultracold Bose Gases in 1D Disorder: From Lifshits Glass to Bose-Einstein Condensate
2007 StandoutNobel
Tunneling of Optical Pulses through Photonic Band Gaps
1994 StandoutNobel
Photodetection with Active Optical Antennas
2011 StandoutScience
Dynamical mean-field theory of strongly correlated fermion systems and the limit of infinite dimensions
1996 Standout
Field and thermionic-field emission in Schottky barriers
1966
Ultraviolet Reflection Spectrum of Cubic CdS
1965
Graphene-Like Two-Dimensional Materials
2013 Standout
Fundamental limitations in microelectronics—I. MOS technology
1972
Electrical Conductivity in Doped Polyacetylene
1977 StandoutNobel
Semiconducting and other major properties of gallium arsenide
1982 Standout
Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium Arsenide
1964
Electrical transport in doped polyacetylene
1980 StandoutNobel
ON THE TRANSITION TO METALLIC CONDUCTION IN SEMICONDUCTORS
1956
AuSiC Schottky barrier diodes
1974
Photoluminescence study of Si-doped GaN∕Al0.07Ga0.93N multiple quantum wells with different dopant position
2004 StandoutNobel
BAND-FILLING MODEL FOR GaAs INJECTION LUMINESCENCE
1963 StandoutNobel
Highly conducting polyacetylene: Three-dimensional delocalization
1991 StandoutNobel
Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (202¯1) InGaN/GaN heterostructures
2012 StandoutNobel
Structure and chemical bonding in zintl-phases containing lithium
1990
Experimental study of semiconductor surface conductivity
1966
Impurity effect on grown-in dislocation density of InP and GaAs crystals
1978
Metal Schottky barrier contacts to alpha 6H-SiC
1992 StandoutNobel
Band Structure of the Intermetallic Semiconductors from Pressure Experiments
1961
Anomalous Magnetoresistance of Quasi One-DimensionalHg 3 − δ As F 6
1979 StandoutNobel
Vacancy Association of Defects in Annealed GaAs
1971 StandoutNobel
Organic Thin Film Transistors for Large Area Electronics
2002 Standout
Size effects in the excited electronic states of small colloidal CdS crystallites
1984 StandoutNobel
Electron Tunneling between a Metal and a Semiconductor: Characteristics of Al-Al2O3-SnTe and −GeTe Junctions
1967 StandoutNobel
Extrinsic gettering via the controlled introduction of misfit dislocations
1985 StandoutNobel
Colloquium: Strong-field phenomena in periodic systems
2018 StandoutNobel
Alloy Negative Electrodes for Li-Ion Batteries
2014 Standout
Complex vs Band Formation in Perovskite Oxides
1965 StandoutNobel
ELECTRON TUNNELING FROM METAL TO InSb
1966 StandoutNobel
Spontaneous and Stimulated Recombination Radiation in Semiconductors
1964
A Molecular Shift Register Based on Electron Transfer
1988 StandoutScienceNobel
Thermoelectric Power of Some Organic Photoconducting Dyes
1965
The Fermi Surface of Graphite
1964
Tunneling of a Wave Packet
1962
Titanium-silicon Schottky barrier diodes
1970
Mechanisms of Pulsed Laser Ablation of Biological Tissues
2003 Standout
Fundamentals of Modern VLSI Devices
2009 Standout
Influence of Degeneracy on Recombination Radiation in Germanium
1960
Organometallic Synthesis and Spectroscopic Characterization of Manganese-Doped CdSe Nanocrystals
2000 StandoutNobel
Photothermal Nanomaterials: A Powerful Light-to-Heat Converter
2023 Standout
The theory of impurity conduction
1961
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
2010
Reflection and Guiding of Light at p-n Junctions
1963 StandoutNobel
Energy relaxation of two-dimensional carriers in strained Ge/Si0.4Ge0.6 and Si/Si0.7Ge0.3 quantum wells: Evidence for two-dimensional acoustic phonons
1997 StandoutNobel
Liquid water as a lone-pair amorphous semiconductor
1976
Electron localization and charge transport in poly(o-toluidine): A model polyaniline derivative
1991 StandoutNobel
Electronic properties of two-dimensional systems
1982 Standout
The electronic properties of graphene
2009 StandoutNobel
Photocollection efficiency and interface charges of MBE-grown abrupt p (GaAs) -N (Al0.33Ga0.67As) heterojunctions
1978 StandoutNobel
Works of P Aigrain being referenced
Adsorption sur les Semi‐Conducteurs
1952
Progress in Semiconductors
1958
L'émission infrarouge du germanium
1956
Modulation de la conductance d'un semi-conducteur par un champ électrique
1952
Optical Absorption of Arsenic-Doped Degenerate Germanium
1962
Internal Field Emission at Narrow Silicon and Germaniump − n
1960
Theory of impurity bands with randomly distributed centers
1954
Rectifying semiconductor contacts
1958