Standout Papers
Citation Impact
Citing Papers
Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff
1999
A GaN bulk crystal with improved structural quality grown by the ammonothermal method
2007 StandoutNobel
Detection of individual gas molecules adsorbed on graphene
2007 StandoutNobel
Density of States and Zero Landau Level Probed through Capacitance of Graphene
2010 StandoutNobel
Elastic Scattering Time of Matter Waves in Disordered Potentials
2019 StandoutNobel
Congruent melting of gallium nitride at 6 GPa and its application to single-crystal growth
2003 StandoutNobel
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
2012 Standout
Photonic crystal laser lift-off GaN light-emitting diodes
2006 StandoutNobel
The structure and properties of metal-semiconductor interfaces
1982
The Golden Age of Transfer Hydrogenation
2015 Standout
Properties of the apparent metal-insulator transition in two-dimensional systems
1998 StandoutNobel
Horizontal Single-Walled Carbon Nanotube Arrays: Controlled Synthesis, Characterizations, and Applications
2020
Structural defects and microstrain in GaN induced by Mg ion implantation
1998
Experimental evidence for finite-width edge channels in integer and fractional quantum Hall effects
1993 StandoutNobel
Noncovalent Functionalization of Graphene and Graphene Oxide for Energy Materials, Biosensing, Catalytic, and Biomedical Applications
2016 Standout
Graphene Cathode-Based ZnO Nanowire Hybrid Solar Cells
2012 StandoutNobel
Metal Electrode Work Function Modification Using Aerosol Jet Printing
2014
Breakdown of universal scaling of conductance fluctuations in high magnetic fields
1992 StandoutNobel
Energy Structure and Quantized Hall Effect of Two-Dimensional Holes
1983 StandoutNobel
Spintronics: Fundamentals and applications
2004 Standout
Mechanics of laser-assisted debonding of films
2001
Effect of annealing temperature on the characteristics of the modified spray deposited Li-doped NiO films and their applications in transparent heterojunction diode
2014
Heat-capacity study of two-dimensional electrons in GaAs/Al x Ga 1 − x
1992 StandoutNobel
Efficient and stable large-area perovskite solar cells with inorganic charge extraction layers
2015 StandoutScience
Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Lift-Off
2003
Comprehensive characterization of hydride VPE grown GaN layers and templates
2001
Recovery of Structural Defects in GaN After Heavy Ion Implantation
1997 StandoutNobel
Resonant tunneling in magnetic field: Evidence for space-charge buildup
1987 StandoutNobel
Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces
2012 Standout
Noble-metal–CdTe interface formation
1988 StandoutNobel
Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique
2004 StandoutNobel
Laser lift-off technique for freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes
2014 StandoutNobel
Readily available ferrocenyl-phosphinite ligands for Ru(II)-catalyzed enantioselective transfer hydrogenation of ketones and fabrication of hybrid heterojunctions
2013
Surface modification of titanium, titanium alloys, and related materials for biomedical applications
2004 Standout
Self-Assembled Crystalline Bundles in Soluble Metal–Organic Nanotubes
2023 StandoutNobel
Magnetic-Field-Induced Spin-Conserving and Spin-Flip Intersubband Transitions in InAs Quantum Wells
1995 StandoutNobel
Tunneling Spectroscopy and Inverse Photoemission: Image and Field States
1985 StandoutNobel
Gas-source molecular beam epitaxy of III–V nitrides
1997 StandoutNobel
High performance thin-film flip-chip InGaN–GaN light-emitting diodes
2006
Polymers for 3D Printing and Customized Additive Manufacturing
2017 Standout
Cyclotron resonance of high-mobility two-dimensional electrons at extremely low densities
1988 StandoutNobel
Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices
2010 Science
A Low-Threshold, High-Efficiency Microfluidic Waveguide Laser
2005 StandoutNobel
Scaling in spin-degenerate Landau levels in the integer quantum Hall effect
1993 StandoutNobel
InAs-AlSb quantum wells in tilted magnetic fields
2000 StandoutNobel
Lab-on-chip technologies: making a microfluidic network and coupling it into a complete microsystem—a review
2007
Graphene, related two-dimensional crystals, and hybrid systems for energy conversion and storage
2015 StandoutScience
Reactive Oxygen Species (ROS)-Based Nanomedicine
2019 Standout
Colloidal Antireflection Coating Improves Graphene–Silicon Solar Cells
2013
Graphitic Carbon Nitride (g-C3N4)-Based Photocatalysts for Artificial Photosynthesis and Environmental Remediation: Are We a Step Closer To Achieving Sustainability?
2016 Standout
Synthesis and Development of Graphene–Inorganic Semiconductor Nanocomposites
2015
Evidence for the Fractional Quantum Hall State atν = 1 7
1988 StandoutNobel
Strain-related phenomena in GaN thin films
1996 StandoutNobel
Recent Advances in Ultrathin Two-Dimensional Nanomaterials
2017 Standout
Lattice site location studies of ion implanted Li8 in GaN
1998 StandoutNobel
Transport anomalies in the lowest Landau level of two-dimensional electrons at half-filling
1989 StandoutNobel
Density of States and de Haas—van Alphen Effect in Two-Dimensional Electron Systems
1985 StandoutNobel
Temperature dependence of the quantized Hall effect
1985 StandoutNobel
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
2004 StandoutNobel
Behavior of the Si/SiO2 interface observed by Fowler-Nordheim tunneling
1982
Monolithically integrated semiconductor fluorescence sensor for microfluidic applications
2004 StandoutNobel
Absorption of ballistic phonons by the (001) inversion layer of Si: Electron-phonon interaction in two dimensions
1983 StandoutNobel
Emerging Droplet Microfluidics
2017 Standout
Electronic properties of junctions between silicon and organic conducting polymers
1990 StandoutNatureNobel
Nanoscale inhomogeneity of the Schottky barrier and resistivity inMoS 2
2015
Electronic properties of two-dimensional systems
1982 Standout
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Works of N.W. Cheung being referenced
Damage-free separation of GaN thin films from sapphire substrates
1998
Ni on Si(111): Reactivity and Interface Structure
1980
Thermal annealing characteristics of Si and Mg-implanted GaN thin films
1996
Electromigration characteristics of copper interconnects
1993
Extraction of Schottky diode parameters from forward current-voltage characteristics
1986 Standout
Studies of the Si-SiO2 interface by MeV ion channeling
1979
Metal–semiconductor interfacial reactions: Ni/Si system
1981
Heterogeneous integration of CdS filters with GaN LEDs for fluorescence detection microsystems
2003
The influence of nitrogen ion energy on the quality of GaN films grown with molecular beam epitaxy
1995
In x Ga 1−x N light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off
2000
Abstract: MeV ion scattering from thin Si single crystals: A novel approach to interface studies
1979
Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off
1999
Plasma-Immersion Ion Implantation
1996
Lattice-Location Experiment of the Ni-Si Interface by Thin-Crystal Channeling of Helium Ions
1981