N. Pütz

Alternative Plasmonic Materials: Beyond Gold and Silver

MOVPE growth of GaAs using a N2 carrier

Growth and characterization of device quality GaAs produced by laser-assisted atomic layer epitaxy using triethylgallium

Nanocomposites: synthesis, structure, properties and new application opportunities

Atomic layer epitaxy of GaAs using N2 carrier gas

Photoinduced reactivity of titanium dioxide

Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

Defect-mediated surface morphology of nonpolar m-plane GaN

Ultrathin Organic Films Grown by Organic Molecular Beam Deposition and Related Techniques

Heavily carbon doped p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy

Advances in MOVPE, MBE, and CBE

Chemical vapour deposition of coatings

Atomic layer epitaxy of GaAs from tertiarybutylarsine and triethylgallium

Control of strain in GaN by a combination of H2 and N2 carrier gases

Selective vapor-phase deposition on patterned substrates

A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAs

Selective growth of GaAs in the MOMBE and MOCVD systems

On the role of Hydrogen in the MOCVD of GaAs

Kinetics of GaAs growth by low pressure MO-CVD