Citation Impact
Citing Papers
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
2012 Standout
Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers
1994 StandoutNobel
Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
1997 StandoutNobel
1998
Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films
2002 StandoutNobel
High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodes
1994 StandoutNobel
Band offset transitivity at the InGaAs/InAlAs/InP(001) heterointerfaces
1991
Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy
2002 StandoutNobel
In0.53Ga0.47As/InP heterojunctions with low interface defect densities
1991
Optical investigations of the band offsets in an InGaAs-InGaAsP-InP double-step heterostructure
1990
Infrared lattice vibrations of GaN
1992
Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
1997 StandoutNobel
Photoluminescence related to the two-dimensional electron gas at a GaN/AlGaN heterointerface
1996 StandoutNobel
Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substrates
1993
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
1994 Standout
GaN/AlN digital alloy short-period superlattices by switched atomic layer metalorganic chemical vapor deposition
1993
Atomic Layer Deposition Functionalized Composite SOFC Cathode La0.6Sr0.4Fe0.8Co0.2O3-δ -Gd0.2Ce0.8O1.9: Enhanced Long-Term Stability
2013 StandoutNobel
Self-limiting growth of InP by alternate trimethylindium and tertiarybutylphosphine supply in ultrahigh vacuum
1999
A comprehensive review of ZnO materials and devices
2005 Standout
Investigations of MOCVD-grown AlInAs-InP type II heterostructures
1992
Progress and prospects of group-III nitride semiconductors
1996
Electronic structure of strained-layer quantum wells
1997
Cleaning of AlN and GaN surfaces
1998 StandoutNobel
High Al-content AlGaN/GaN MODFETs for ultrahigh performance
1998
Hydrogen Complexes in III-V Semiconductors
1989
GaN-Based RF Power Devices and Amplifiers
2008 Standout
Atomic Layer Deposition: An Overview
2009 Standout
Low pressure metalorganic chemical vapor deposition of AIN over sapphire substrates
1992
Empirical fit to band discontinuities and barrier heights in III–V alloy systems
1992
Binding energy for the intrinsic excitons in wurtzite GaN
1996 StandoutNobel
Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface
1997
Phonon density of states of bulk gallium nitride
1998 StandoutNobel
Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectricGa 1 − x In x N / G a N
2000 StandoutNobel
Surface reaction mechanisms for atomic layer deposition of silicon nitride
2004
Photoluminescence decay dynamics in an InGaN/GaN/AlGaN single quantum well
1997 StandoutNobel
Properties of the yellow luminescence in undoped GaN epitaxial layers
1995 StandoutNobel
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Measurement of InP/In0.53Ga0.47As and In0.53Ga0.47As/In0.52Al0.48As heterojunction band offsets by x-ray photoemission spectroscopy
1991
Direct determination of the band discontinuities inIn x Ga 1 − x In y Al 1 − y
1993
Hydrogen in III–V Semiconductors
1987
Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications
2003
Metal semiconductor field effect transistor based on single crystal GaN
1993
Internal photoemission and energy-band offsets in GaAs-GaInP p-I-N heterojunction photodiodes
1991
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Determination of polarization field in a semipolar (112¯2) InGa∕GaN single quantum well using Franz–Keldysh oscillations in electroreflectance
2009 StandoutNobel
Exciton fine structure in undoped GaN epitaxial films
1996 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Piezoelectric Franz–Keldysh effect in strained GaInN/GaN heterostructures
1999 StandoutNobel
Franz–Keldysh oscillations in modulation spectroscopy
1995
X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms
1999 StandoutNobel
Intrinsic exciton transitions in GaN
1998 StandoutNobel
GaN: Processing, defects, and devices
1999
Variation of GaN valence bands with biaxial stress and quantification of residual stress
1997 StandoutNobel
Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation
1997 StandoutNobel
Electroreflectance Study of (AlxGa1-x)0.5In0.5P Alloys
1996
Determining energy-band offsets in quantum wells using only spectroscopic data
1993
Emerging gallium nitride based devices
1995
Band-offset transitivity in strained (001) heterointerfaces
1992
Strain effects on excitonic transitions in GaN: Deformation potentials
1996 StandoutNobel
Conduction-band and valence-band structures in strainedIn 1 − x Ga x
1993
Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction
1998 StandoutNobel
Strain-related phenomena in GaN thin films
1996 StandoutNobel
Schottky barrier photodetector based on Mg-doped p-type GaN films
1993
Optimized tight-binding valence bands and heterojunction offsets in strained III-V semiconductors
1991
Influence of potential fluctuations on electrical transport and optical properties in modulation-dopedG a N / A l 0.28 Ga 0.72 N
1998 StandoutNobel
Intersubband resonances in InAs/AlSb quantum wells: Selection rules, matrix elements, and the depolarization field
1996 StandoutNobel
Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
1997 StandoutNobel
Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices
1993
Electron-beam-induced optical memory effects in GaN
2002 StandoutNobel
Polarization charges and polarization-induced barriers in AlxGa1−xN/GaN and InyGa1−yN/GaN heterostructures
2001 StandoutNobel
Microwave performance of GaN MESFETs
1994
Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure laser diodes
1997 StandoutNobel
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
Electron mobility exceeding 104 cm2/V s in an AlGaN–GaN heterostructure grown on a sapphire substrate
1999
Deep level defects in n-type GaN
1994 StandoutNobel
InGaN‐based blue/green LEDs and laser diodes
1996 StandoutNobel
Hydrogen interactions with defects in crystalline solids
1992 Standout
Progress and prospects for GaN and the III–V nitride semiconductors
1993
Deposition and surface characterization of high quality single crystal GaN layers
1993
Self-limiting growth conditions on (001) InP by alternate triethylindium and tertiarybutylphosphine supply in ultrahigh vacuum
1999
Magneto-optical studies of GaN and GaN/AlxGa1−xN: Donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance
1996 StandoutNobel
High On/Off Ratio in Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
2006 StandoutNobel
Magnetotransport studies of AlGaN/GaN heterostructures grown on sapphire substrates: Effective mass and scattering time
2000
High electron mobility transistor based on a GaN-AlxGa1−xN heterojunction
1993
High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma
1997 StandoutNobel
Expanded self-limiting growth condition of InP using alternate trimethylindium and tertiarybutylphosphine supply in ultrahigh vacuum
2000
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Normal incidence intersubband transitions in Si-doped InGaAs multiple quantum wells
1993
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Works of N. Pan being referenced
Si donor neutralization in high-purity GaAs
1987
Growth of high purity InGaAs using different indium sources
1989
A simple method for determining band-gap energies from inhomogeneous electric field electroreflection spectra applied to GaAs
1994
Atomic layer epitaxy of InP using trimethylindium and tertiarybutylphosphine
1993
Saturation of the surface field with external bias for metalorganic chemical vapor deposition epilayer GaAs/GaAs as determined by electroreflection spectroscopy
1992
Photoreflectance characterization of AlGaAs/GaAs modulation-doped heterostructures
1990
High-power gain-guided coupled-stripe quantum well laser array by hydrogenation
1988
Turn-on voltage investigation of GaAs-based bipolar transistors with Ga/sub 1-x/In/sub x/As/sub 1-y/Ny base layers
2000
Hydrogen passivation of C acceptors in high-purity GaAs
1987
Stripe-geometry AlxGa1−xAs-GaAs quantum well lasers via hydrogenation
1987
Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN-AlxGa1−xN heterojunctions
1992
Mapping of the localized interface and surface states of InGaAs lattice matched to Fe-doped InP by infrared spectroscopy
1992
Internal photoemission and band discontinuities at Ga0.47In0.53As-InP heterojunctions
1989