Immediate Impact
23 standout
Citing Papers
Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices
2021 Standout
Piezoelectric Materials for Energy Harvesting and Sensing Applications: Roadmap for Future Smart Materials
2021 Standout
Works of N. Hashizume being referenced
n + -GaAs/undoped GaAlAs/undoped GaAs field-effect transistor
1984
Submicron-Length Tungsten-Gate Self-Aligned GaAs FET
1982
Author Peers
| Author | Last Decade | Papers | Cites | |||
|---|---|---|---|---|---|---|
| N. Hashizume | 267 | 183 | 52 | 41 | 301 | |
| M. Miyashita | 242 | 132 | 39 | 31 | 258 | |
| Masamichi Sakamoto | 252 | 179 | 17 | 34 | 315 | |
| L.L. Liou | 296 | 195 | 38 | 36 | 350 | |
| M. Taysing-Lara | 243 | 227 | 31 | 33 | 311 | |
| Mark DeVito | 328 | 192 | 27 | 38 | 365 | |
| C. Bozada | 277 | 213 | 42 | 25 | 325 | |
| A. Peczalski | 308 | 108 | 34 | 33 | 337 | |
| Arthur D. van Rheenen | 253 | 150 | 17 | 40 | 298 | |
| H. Hida | 295 | 137 | 35 | 32 | 322 | |
| P. J. Phillips | 293 | 221 | 31 | 35 | 361 |
All Works
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