Standout Papers

MoS<sub>2</sub>transistors with 1-nanometer gate l... 2007 2026 2013 2019 1.1k
  1. MoS2transistors with 1-nanometer gate lengths (2016)
    Sujay B. Desai, Surabhi R. Madhvapathy et al. Science
  2. Field-effect transistors made from solution-grown two-dimensional tellurene (2018)
    Yixiu Wang, Gang Qiu et al. Nature Electronics
  3. Synthesis and Characterization of 9 nm Pt–Ni Octahedra with a Record High Activity of 3.3 A/mgPt for the Oxygen Reduction Reaction (2013)
    Sang‐Il Choi, Shuifen Xie et al. Nano Letters
  4. Synthesis and Mechanistic Study of Palladium Nanobars and Nanorods (2007)
    Yujie Xiong, Benjamin J. Wiley et al. Journal of the American Chemical Society
  5. Solving oxygen embrittlement of refractory high-entropy alloy via grain boundary engineering (2022)
    Hong‐Hui Wu, Yuan Wu et al. Materials Today

Immediate Impact

12 by Nobel laureates 61 from Science/Nature 158 standout
Sub-graph 1 of 12

Citing Papers

The future transistors
2023 StandoutNature
Ballistic two-dimensional InSe transistors
2023 StandoutNature
71 intermediate papers

Works of Moon J. Kim being referenced

MoS2transistors with 1-nanometer gate lengths
2016 StandoutScience
Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition
2015
and 21 more

Author Peers

Author Last Decade Papers Cites
Moon J. Kim 12444 7441 2650 3864 321 18.5k
Yang Zhang 8687 6173 4640 3280 473 16.5k
Di Wang 9516 5286 2639 3326 391 15.8k
Lei Fu 9639 6605 3284 2909 354 16.1k
Jing Zhu 9813 7785 4786 3971 447 17.3k
Xiaoyu Zhang 13070 11641 2242 3653 551 20.6k
Toshiyuki Mori 10919 5209 944 4885 423 15.3k
Jian Yang 13930 17647 3361 5052 553 29.3k
Jianping Yang 10035 9860 2674 5713 376 22.1k
Jia Li 9089 10832 1728 5368 428 19.6k
Shiyu Du 11430 4666 2575 2439 318 15.5k

All Works

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2026