Mickaël Petit

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

TALYS: modeling of nuclear reactions

Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs

Neutron Radiative Capture Cross Section of²³²Th in the Energy Range from 0.06 to 2 MeV