Standout Papers
Citation Impact
Citing Papers
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Sequential Synthesis of Coordination Polymersomes
2014 StandoutNobel
Selective gas adsorption and separation in metal–organic frameworks
2009 Standout
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Photocatalysts with internal electric fields
2013
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
2002
Wet etching of GaN grown by molecular beam epitaxy on Si(111)
2000
Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode
2005 StandoutNobel
Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy
2002 StandoutNobel
Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition
2008
Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB
2001
A comprehensive review of ZnO materials and devices
2005 Standout
Production of hydrocarbons by pyrolysis of methyl esters from rapeseed oil
1995
Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy
2003
Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope
2003 StandoutNobel
Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
1999
Nitrogen-polar GaN growth evolution on c-plane sapphire
2008
On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
1998 StandoutNobel
Structural characterization of nonpolar (1120) a-plane GaN thin films grown on (1102) r-plane sapphire
2002
Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
2009 StandoutNobel
Surface potential effect on excitons in AlGaN/GaN quantum well structures
2013 StandoutNobel
Advanced Thermoelectric Design: From Materials and Structures to Devices
2020 Standout
Covalent organic frameworks comprising cobalt porphyrins for catalytic CO 2 reduction in water
2015 StandoutScienceNobel
Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectricGa 1 − x In x N / G a N
2000 StandoutNobel
Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces
2012 Standout
Ohmic Cathode Electrode on the Backside of m-Plane and (2021) Bulk GaN Substrates for Optical Device Applications
2011 StandoutNobel
The growth of N-face GaN by MOCVD: effect of Mg, Si, and In
2004 StandoutNobel
High optical quality AlInGaN by metalorganic chemical vapor deposition
1999
High conductivity modulation doped AlGaN/GaN multiple channel heterostructures
2003
Ultrahigh Thermoelectric Performance in SrNb0.2Ti0.8O3 Oxide Films at a Submicrometer-Scale Thickness
2017
Future Porous Materials
2017 StandoutNobel
Carbon capture and conversion using metal–organic frameworks and MOF-based materials
2019 StandoutNobel
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Spontaneous polarization effects in wurtzite GaN/AlGaN quantum wells and comparison with experiment
2000
Two Principles of Reticular Chemistry Uncovered in a Metal–Organic Framework of Heterotritopic Linkers and Infinite Secondary Building Units
2016 StandoutNobel
Superior Thermal Conductivity of Single-Layer Graphene
2008 Standout
Photoluminescence study of Si-doped GaN∕Al0.07Ga0.93N multiple quantum wells with different dopant position
2004 StandoutNobel
Electrical characterization of p-type N-polar and Ga-polar GaN grown by metalorganic chemical vapor deposition
2007
AlGaN/GaN HEMTs-an overview of device operation and applications
2002 Standout
Diffusion of inert gases in silica sodalite: Importance of lattice flexibility
2001
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
2001 Standout
Microfluidic Investigation of Nanoparticles’ Role in Mobilizing Trapped Oil Droplets in Porous Media
2015
Simultaneous observation of luminescence and dissociation processes of Mg–H complex for Mg-doped GaN
2002 StandoutNobel
Switchable gate-opening effect in metal–organic polyhedra assemblies through solution processing
2018 StandoutNobel
A Metal–Organic Framework of Organic Vertices and Polyoxometalate Linkers as a Solid-State Electrolyte
2019 StandoutNobel
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures
2008
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Analysis of polar GaN surfaces with photoelectron and high resolution electron energy loss spectroscopy
2010
Polarity determination of a-plane GaN on r-plane sapphire and its effects on lateral overgrowth and heteroepitaxy
2003
Tuning the structure and function of metal–organic frameworks via linker design
2014 Standout
Characterization of band bendings on Ga-face and N-face GaN films grown by metalorganic chemical-vapor deposition
2002
Control of crystal polarity in a wurtzite crystal: ZnO films grown by plasma-assisted molecular-beam epitaxy on GaN
2002
Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties
2014 StandoutNobel
GaN: Processing, defects, and devices
1999
Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices
1999
Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures
2003
Structures of Metal–Organic Frameworks with Rod Secondary Building Units
2016 StandoutNobel
Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition
2008
Controllable Modular Growth of Hierarchical MOF‐on‐MOF Architectures
2017 StandoutNobel
The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures
2009
Group III-nitride based hetero and quantum structures
2000
Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy
2005 StandoutNobel
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
2000
Increased Polarization Ratio on Semipolar (1122) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition
2008 StandoutNobel
Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy
1999
Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates
2012 StandoutNobel
Non-Interpenetrated Metal–Organic Frameworks Based on Copper(II) Paddlewheel and Oligoparaxylene-Isophthalate Linkers: Synthesis, Structure, and Gas Adsorption
2016 StandoutNobel
Ta-based interface ohmic contacts to AlGaN/GaN heterostructures
2001
Comparison of spontaneous and piezoelectric polarization in GaN/Al0.65Ga0.35N multi-quantum-well structures
2000
Thermal conductivity of GaN films: Effects of impurities and dislocations
2002
Thermoelectric effects in wurtzite GaN and AlxGa1−xN alloys
2005
Review of polarity determination and control of GaN
2004
Cocatalysts for Selective Photoreduction of CO2into Solar Fuels
2019 Standout
Phonon mode behavior in strained wurtziteAl N ∕ Ga N
2005 StandoutNobel
High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures
2006
Nanoscale luminescence spectroscopy of defects at buried interfaces and ultrathin films
2001
Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping
2006 StandoutNobel
Reduction of threading dislocations in migration enhanced epitaxy grown GaN with N-polarity by use of AlN multiple interlayer
2001
Thermal conduction in AlxGa1−xN alloys and thin films
2005
Threading dislocation reduction via laterally overgrown nonpolar (1120) a-plane GaN
2002
Polarization fields determination in AlGaN/GaN heterostructure field-effect transistors from charge control analysis
1999
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
2004 StandoutNobel
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2000 StandoutNature
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition
2007
Introduction of Functionality, Selection of Topology, and Enhancement of Gas Adsorption in Multivariate Metal–Organic Framework-177
2015 StandoutNobel
Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition
2002
Synthesis of Transportation Fuels from Biomass: Chemistry, Catalysts, and Engineering
2006 Standout
Photothermal Nanomaterials: A Powerful Light-to-Heat Converter
2023 Standout
Emerging Droplet Microfluidics
2017 Standout
Mg Zn O ∕ Al Ga N heterostructure light-emitting diodes
2004
N-polar GaN∕AlGaN∕GaN high electron mobility transistors
2007
Playing with Polarity
2001
Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells
1999
Coordination pillared layers using a dinuclear Mn(V) complex as a secondary building unit
2012 StandoutNobel
Investigation of violet InGaN laser diodes with normal and reversed polarizations
2007
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Works of Michael J. Murphy being referenced
A new modification of an old framework: Hofmann layers with unusual tetracyanidometallate groups
2011
A porous Mn(v) coordination framework with PtS topology: assessment of the influence of a terminal nitride on CO2 sorption
2013
Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices
1999
Guest Programmable Multistep Spin Crossover in a Porous 2-D Hofmann-Type Material
2017
Lateral polarity heterostructures by overgrowth of patterned AlxGa1-xN nucleation layers
2000
Undoped AlGaN/GaN HEMTs for microwave power amplification
2001
The Influence of Spontaneous and Piezoelectric Polarization on Novel AlGaN/GaN/InGaN Device Structures
1999
Classical and Quantum Transition State Theory for the Diffusion of Helium in Silica Sodalite
1997
Influence of AlGaN deep level defects on AlGaN/GaN 2-DEG carrier confinement
2001
Depth-resolved spectroscopy of interface defects in AlGaN/GaN heterostructure field effect transistors device structures
2000
High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy
1999
Low temperature scanning tunneling microscope-induced luminescence of GaN
1998
Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN/GaN based heterostructures
1999
High Frequency AlGaN/GaN MODFET's
1997
Investigation of Nanoparticle Adsorption During Transport in Porous Media
2014
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
2000
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
1999 Standout
Normal and Inverted Algan/Gan Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy
1999
Thermochemical applications for fats and oils
1985
Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire
2000
Polarization Induced Charge at Heterojunctions of the III-V Nitrides and Their Alloys
1999