Citation Impact
Citing Papers
A GaN bulk crystal with improved structural quality grown by the ammonothermal method
2007 StandoutNobel
Super-resolution microscopy demystified
2018 Standout
Recent developments in compact ultrafast lasers
2003 StandoutNature
Sequence-independent segmentation of magnetic resonance images
2004 Standout
External electro-optic integrated circuit probing
1990 StandoutNobel
Strained layer heterostructures, and their applications to MODFETs, HBTs, and lasers
1993
Experimental characterization of external electrooptic probes
1991 StandoutNobel
Influence of partially known parameter on flaw characterization in Eddy Current Testing by using a random walk MCMC method based on metamodeling
2014 Standout
Growth of Bulk GaN with Low Dislocation Density by the Ammonothermal Method Using Polycrystalline GaN Nutrient
2007 StandoutNobel
Luminescence properties of defects in GaN
2005 Standout
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
1994 Standout
Induction Heating Technology and Its Applications: Past Developments, Current Technology, and Future Challenges
2013 Standout
Optoelectronic transient characterization of ultrafast devices
1992 StandoutNobel
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
2014 Standout
Current-gain cutoff frequency comparison of InGaAs HEMTs
1988
50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors
1992
Selective liquid phase epitaxy and defect reduction in GaAs grown on GaAs-coated silicon by molecular beam epitaxy
1987
Comprehensive characterization of hydride VPE grown GaN layers and templates
2001
Optoelectronic measurements of picosecond electrical pulse propagation in coplanar waveguide transmission lines
1989
Evaluation of layered media Green's functions via rational function fitting
2004
Transient-mode liquid phase epitaxial growth of GaAs on GaAs-coated Si substrates prepared by migration-enhanced molecular beam epitaxy
1989 StandoutNobel
GaAs field-effect transistor with an atomically precise ultrashort gate
1991 StandoutNobel
Ammonothermal growth of bulk GaN
2008 StandoutNobel
Cyclotron resonance of two-dimensional holes in strained-layer quantum well structure of (100)In0.20Ga0.80As/GaAs
1989 StandoutNobel
Microwave performance of a digital alloy barrier Al(Sb,As)/AlSb/InAs heterostructure field-effect transistor
1993 StandoutNobel
External electro-optic probing of millimeter-wave integrated circuits
2003 StandoutNobel
Ultrahigh-bandwidth vector network analyzer based on external electro-optic sampling
1992 StandoutNobel
Breaking the Axial Diffraction Limit: A Guide to Axial Super‐Resolution Fluorescence Microscopy
2018
0.1-µm Gate-length pseudomorphic HEMT's
1987
Picosecond optical sampling of GaAs integrated circuits
1988
Ultra-high speed modulation-doped field-effect transistors: a tutorial review
1992
Status and perspectives of the ammonothermal growth of GaN substrates
2007 StandoutNobel
Modeling of Planar Spiral Inductors Between Two Multilayer Media for Induction Heating Applications
2006
Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors
1994 StandoutNobel
Modeling of MODFETs
1988
Efficient Modeling of ECT Signals for Realistic Cracks in Layered Half-Space
2012
Classification of hyperspectral remote sensing images with support vector machines
2004 Standout
Improving the Pole Relocating Properties of Vector Fitting
2006 Standout
Subthreshold and near-threshold conduction in GaAs/AlGaAs MODFETs
1989 StandoutNobel
Covariance estimation with limited training samples
1999
Works of M.I. Aksun being referenced
Performance of quarter-micron GaAs metal-semiconductor field-effect transistors on Si substrates
1986
Closed-form Green's functions for general sources and stratified media
1995
A robust approach for the derivation of closed-form Green's functions
1996
Microwave performance of InAlAs/InGaAs/InP MODFET's
1987
Spectral self-interference fluorescence microscopy
2004
Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor
1986