Citation Impact
Citing Papers
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes
2010 StandoutNobel
Recent advances in energy transfer in bulk and nanoscale luminescent materials: from spectroscopy to applications
2015
Observation and modeling of the time-dependent descreening of internal electric field in a wurtziteG a N / A l 0.15 Ga 0.85 N
2004
A review of Ga2O3 materials, processing, and devices
2018 Standout
Novel activation process for Mg-implanted GaN
2013 StandoutNobel
Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
2005
Review—Ionizing Radiation Damage Effects on GaN Devices
2015
Control of growth mode in Mg-doped GaN/AlN heterostructure
2014 StandoutNobel
Recombination dynamics of a 268nm emission peak in Al0.53In0.11Ga0.36N∕Al0.58In0.02Ga0.40N multiple quantum wells
2006 StandoutNobel
Temperature dependence of anisotropic magnetoresistance in antiferromagnetic Sr2IrO4
2015 StandoutNobel
Time resolved photoluminescence study of Si modulation doped GaN/Al0.07Ga0.93N multiple quantum wells
2004 StandoutNobel
Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy
2007 StandoutNobel
Lanthanide-Activated Phosphors Based on 4f-5d Optical Transitions: Theoretical and Experimental Aspects
2017 Standout
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Intensity dependent time‐resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a‐plane and planar c‐plane GaN
2005 StandoutNobel
What Is the Mechanism of MAPbI3 p-Doping by I2? Insights from Optoelectronic Properties
2017
Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells
2010 StandoutNobel
Studies of Effects of Current on Exchange-Bias: A Brief Review
2008
Temperature and excitation power dependent photoluminescence intensity of GaInN quantum wells with varying charge carrier wave function overlap
2010
Recombination dynamics of localized excitons in cubic InxGa1−xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C–SiC substrate
2003 StandoutNobel
Next generation of Ge1−ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission
2012
Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques
2007 StandoutNobel
Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001) sapphire substrate
2003
Time-resolved spectroscopy of (Al,Ga,In)N based quantum wells: Localization effects and effective reduction of internal electric fields
2002
Room-temperature continuous-wave lasing in GaN/InGaN microdisks
2006 StandoutNobel
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
2009 StandoutNobel
Field-dependent carrier decay dynamics in strainedIn x Ga 1 − x N / G a N
2002
Effects of exciton localization on internal quantum efficiency of InGaN nanowires
2013 StandoutNobel
High-Efficiency Perovskite Solar Cells
2020 Standout
Development of high efficiency 255–355 nm AlGaN‐based light‐emitting diodes
2011 StandoutNobel
Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes
2014 StandoutNobel
III–Nitride UV Devices
2005
Radiation Effects in GaN-Based High Electron Mobility Transistors
2015
Contactless electroreflectance of InGaN layers with indium content ≤36%: The surface band bending, band gap bowing, and Stokes shift issues
2009
High quality AlN grown on SiC by metal organic chemical vapor deposition
2008 StandoutNobel
Carrier transport and recombination in InGaN/GaN heterostructures, studied by optical four‐wave mixing technique
2003
Lasing in direct-bandgap GeSn alloy grown on Si
2015 Standout
Combination of Indium–Tin Oxide and SiO2/AlN Dielectric Multilayer Reflective Electrodes for Ultraviolet-Light-Emitting Diodes
2013 StandoutNobel
Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
2014 Standout
Works of Mee‐Yi Ryu being referenced
Cathodoluminescence study of InxGa1−xN quantum wells
2001
Luminescence mechanisms in quaternary AlxInyGa1−x−yN materials
2002
Electrical and optical activation studies of Si-implanted GaN
2005
Room temperature ferromagnetic properties of transition metal implanted Al0.35Ga0.65N
2006
Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells
2001
Time-resolved photoluminescence of quaternary AlInGaN-based multiple quantum wells
2002
Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100)
2011
Ion-beam-induced sharpening of ZnO nanotips
2004
Effects of Si-doping in the barriers on the recombination dynamics in In0.15Ga0.85N/In0.015Ga0.985N quantum wells
2001
Optical properties of InGaN/GaN double quantum wells with varying well thickness
2001
Radiation-induced electron traps in Al0.14Ga0.86N by 1 MeV electron radiation
2005
Indium-incorporation-induced transformation of optical, photoluminescence and lasing properties of InGaN epilayers
2003
Pulsed Metalorganic Chemical Vapor Deposition of Quaternary AlInGaN Layers and Multiple Quantum Wells for Ultraviolet Light Emission
2002
Temperature-Dependent Resonance Energy Transfer from Semiconductor Quantum Wells to Graphene
2015
Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content
2013