Citation Impact
Citing Papers
Passive Cooling of a Micromechanical Oscillator with a Resonant Electric Circuit
2007 StandoutNobel
Narrow-band red-emitting Sr[LiAl3N4]:Eu2+ as a next-generation LED-phosphor material
2014 Standout
Recent Developments in the Field of Inorganic Phosphors
2009 Standout
Materials for terahertz science and technology
2002 Standout
Double embedded photonic crystals for extraction of guided light in light-emitting diodes
2012 StandoutNobel
Dependence of electron mobility in modulation-doped GaAs-(AlGa)As heterojunction interfaces on electron density and Al concentration
1981 StandoutNobel
Radiation-Pressure Cooling of Bound Resonant Absorbers
1978 StandoutNobel
Geonium lineshape
1985
A capacitance bridge circuit for broadband detection of ion cyclotron resonance signals
1981
Geonium theory: Physics of a single electron or ion in a Penning trap
1986 Standout
Electronic properties of the GaAsAlGaAs interface with applications to multi-interface heterojunction superlattices
1980 StandoutNobel
Multiphoton ionization detected by fourier-transform mass spectrometry
1982 StandoutNobel
Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
2007 Standout
High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm
2011 StandoutNobel
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202¯1¯) GaN substrates
2013 StandoutNobel
Fourier transform ion cyclotron resonance studies of H2 chemisorption on niobium cluster cations
1988 StandoutNobel
Principles of the stored ion calorimeter
1975 StandoutNobel
Ce3+-Doped garnet phosphors: composition modification, luminescence properties and applications
2016 Standout
High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates
2013 StandoutNobel
GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
1985 Standout
Semiconducting and other major properties of gallium arsenide
1982 Standout
High mass resolution with a new variable anharmonicity Penning trap
1976 StandoutNobel
Cooling the Collective Motion of Trapped Ions to Initialize a Quantum Register
1998 StandoutNobel
Two-dimensional electron gas at a semiconductor-semiconductor interface
1993 StandoutNobel
The History of Power Transmission by Radio Waves
1984 Standout
Electrostatic modes as a diagnostic in Penning-trap experiments
1994 StandoutNobel
Theory for broadband detection of ion cyclotron resonance signals
1980
Laser Cooling to the Zero-Point Energy of Motion
1989 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
The electron cyclotron maser
2004 Standout
Transport and persistent photoconductivity in atomic-planar-doped GaAs-AlAs/GaAs heterostructures
1988 StandoutNobel
Electric vehicles standards, charging infrastructure, and impact on grid integration: A technological review
2019 Standout
rf SQUID detector for single-ion trapping experiments
1988 StandoutNobel
Mode coupling in a Penning trap:πpulses and a classical avoided crossing
1990 StandoutNobel
Temperature Quenching of Yellow Ce3+ Luminescence in YAG:Ce
2009 Standout
Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates
2010 StandoutNobel
High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate
2013 StandoutNobel
History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination
2013 StandoutNobel
Passive high-power microwave components
2002
Two-dimensional electron gas at a semiconductor-semiconductor interface
1979 StandoutNobel
Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy
2013 StandoutNobel
Prospects for LED lighting
2009 StandoutNobel
Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
1983 Standout
Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates
2013 StandoutNobel
Electrical Properties of the GaAsX 1 C
1970
New high-precision comparison of electron and positrongfactors
1987 StandoutNobel
Radiative recombination mechanisms in GaAsP diodes with and without nitrogen doping
1972
Two ions in a Penning trap: Implications for precision mass spectroscopy
1992 StandoutNobel
Is the light emitting diode (LED) an ultimate lamp?
2000
History of Millimeter and Submillimeter Waves
1984
CODATA recommended values of the fundamental physical constants: 2010
2012 Standout
Single-ion cyclotron resonance measurement ofM(CO + N 2 +
1989 StandoutNobel
High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration
2014 StandoutNobel
Quantum dynamics of single trapped ions
2003 StandoutNobel
A Survey on Mobile Edge Computing: The Communication Perspective
2017 Standout
Long-lifetime photoconductivity effect in n-type GaAlAs
1977
Intrinsic Optical Absorption of Gallium Phosphide between 2.33 and 3.12 eV
1967
Quantum-limited cooling and detection of radio-frequency oscillations by laser-cooled ions
1990 StandoutNobel
Works of M.D. Sirkis being referenced
Gallium arsenide-phosphide: Crystal, diffusion and laser properties
1966
VOLUME EXCITATION OF AN ULTRATHIN SINGLE-MODE CdSe LASER
1966
Behavior of Quasi-Fermi Levels in a Nonequilibrium Semiconductor
1966
Effect of the Direct-Indirect Transition on the Hall Effect in Ga(As1−xPx)
1966
Currents Induced by Moving Charges
1966
The Reflecting Beam Waveguide
1964
EFFECT OF DONOR IMPURITIES ON THE DIRECT-INDIRECT TRANSITION IN Ga(As1 - xPx)
1966
The Harmodotron—a Megavolt Electronics Millimeter Wave Generator
1957