Citation Impact
Citing Papers
Enhanced Light–Matter Interaction and Polariton Relaxation by the Control of Molecular Orientation
2021
Vegetation response to the "African Humid Period" termination in Central Cameroon (7° N) – new pollen insight from Lake Mbalang
2010
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Uncovering temperature-dependent exciton-polariton relaxation mechanisms in hybrid organic-inorganic perovskites
2023 StandoutNobel
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells
2014 StandoutNobel
Double embedded photonic crystals for extraction of guided light in light-emitting diodes
2012 StandoutNobel
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
2014 StandoutNobel
Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells
1999
Theory of non-polar and semi-polar nitride semiconductor quantum-well structures
2012
Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode
2005 StandoutNobel
Electron localization by a donor in the vicinity of a basal stacking fault in GaN
2009
From visible to white light emission by GaN quantum dots on Si(111) substrate
1999
Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures
2011
Persistent Solar Influence on North Atlantic Climate During the Holocene
2001 StandoutScience
Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures
2003 StandoutNobel
Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth
2008 StandoutNobel
Exciton radiative properties in nonpolar homoepitaxial ZnO/(Zn,Mg)O quantum wells
2011
Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells
2013 StandoutNobel
Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes
2000 StandoutNobel
Localized exciton dynamics in nonpolar (112¯) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
2005 StandoutNobel
Recombination dynamics of a 268nm emission peak in Al0.53In0.11Ga0.36N∕Al0.58In0.02Ga0.40N multiple quantum wells
2006 StandoutNobel
Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors
2013 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
GaN/AlGaN intersubband optoelectronic devices
2009
Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN
2011 StandoutNobel
Time resolved photoluminescence study of Si modulation doped GaN/Al0.07Ga0.93N multiple quantum wells
2004 StandoutNobel
Localized quantum well excitons in InGaN single-quantum-well amber light-emitting diodes
2000 StandoutNobel
Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire
2005 StandoutNobel
Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells
2002 StandoutNobel
Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems
2003
Impact of Internal Electric Field and Localization Effect on Quantum Well Excitons in AlGaN/GaN/InGaN Light Emitting Diodes
2001 StandoutNobel
Time-resolved photoluminescence of GaN/Al0.5Ga0.5N quantum wells
2000
Surface potential effect on excitons in AlGaN/GaN quantum well structures
2013 StandoutNobel
Optical Properties of an InGaN Active Layer in Ultraviolet Light Emitting Diode
1999
Major features and forcing of high‐latitude northern hemisphere atmospheric circulation using a 110,000‐year‐long glaciochemical series
1997
Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth
2004 StandoutNobel
Realization of high hole concentrations in Mg doped semipolar (101¯1¯) GaN
2006 StandoutNobel
Dynamics and polarization of group-III nitride lattices: A first-principles study
2000
Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design
2000 StandoutNobel
Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency
2011 StandoutNobel
Photoluminescence study of Si-doped GaN∕Al0.07Ga0.93N multiple quantum wells with different dopant position
2004 StandoutNobel
Doping screening of polarization fields in nitride heterostructures
2000
Anisotropic strain and phonon deformation potentials in GaN
2007 StandoutNobel
Comprehensive description of the dynamical screening of the internal electric fields of AlGaN/GaN quantum wells in time-resolved photoluminescence experiments
2002
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
Phonon deformation potentials of wurtzite AlN
2003
Scale Effects on Exciton Localization and Nonradiative Processes in GaN/AlGaN Quantum Wells
2000
Time-resolved spectroscopy of (Al,Ga,In)N based quantum wells: Localization effects and effective reduction of internal electric fields
2002
Properties of the main Mg-related acceptors in GaN from optical and structural studies
2014 StandoutNobel
Barrier-width dependence of group-III nitrides quantum-well transition energies
1999
Determination of polarization field in a semipolar (112¯2) InGa∕GaN single quantum well using Franz–Keldysh oscillations in electroreflectance
2009 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Defect-mediated surface morphology of nonpolar m-plane GaN
2007 StandoutNobel
Internal electric field effect on luminescence properties of ZnO/(Mg,Zn)O quantum wells
2004
East African megadroughts between 135 and 75 thousand years ago and bearing on early-modern human origins
2007 Standout
Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence
2010
Measured and calculated radiative lifetime and optical absorption ofIn x Ga 1 − x N / G a N
2000
Comparison of Optical Properties of GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
2000 StandoutNobel
Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well
2014 StandoutNobel
Group III-nitride based hetero and quantum structures
2000
Donor binding energies in group III-nitride-based quantum wells: influence of internal electric fields
2001
Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well
2009 StandoutNobel
Study of nonpolar m-plane InGaN∕GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition
2007 StandoutNobel
Comparison of spontaneous and piezoelectric polarization in GaN/Al0.65Ga0.35N multi-quantum-well structures
2000
A pump and probe study of photoinduced internal field screening dynamics in an AlGaN/GaN single-quantum-well structure
2000 StandoutNobel
Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates
2006 StandoutNobel
Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN
1999 StandoutNobel
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Phonon mode behavior in strained wurtziteAl N ∕ Ga N
2005 StandoutNobel
Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy
2003 StandoutNobel
Spontaneous polarization and piezoelectric field inG a N / A l 0.15 Ga 0.85 N
2000
Dichromatic color tuning with InGaN-based light-emitting diodes
2008 StandoutNobel
Reduction of Carrier In-Plane Mobility in Group-III Nitride Based Quantum Wells: The Role of Internal Electric Fields
2001
Polarization fields determination in AlGaN/GaN heterostructure field-effect transistors from charge control analysis
1999
Bantu expansion shows that habitat alters the route and pace of human dispersals
2015 Standout
High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy
2001
Self-limitation of AlGaN/GaN quantum well energy by built-in polarization field
1999
Full Color Emission from II-VI Semiconductor Quantum Dot-Polymer Composites
2000 StandoutNobel
Direct measurement of piezoelectric field in In0.23Ga0.77N/GaN multiple quantum wells by electrotransmission spectroscopy
2002
Vegetation change in equatorial West Africa: time-slices for the last 150 ka
2000
Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells
1999
Observation of exciton polariton condensation in a perovskite lattice at room temperature
2020
Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy
2009
Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells
2004
Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques
2004 StandoutNobel
Works of Marcel Leroux being referenced
From Excitonic to Photonic Polariton Condensate in a ZnO-Based Microcavity
2013
Observation of long-lived oblique excitons in GaN-AlGaN multiple quantum wells
1999
The Meteorology and Climate of Tropical Africa
2001
The Mobile Polar High: a new concept explaining present mechanisms of meridional air-mass and energy exchanges and global propagation of palaeoclimatic changes
1993
Evidence of Atmospheric Paleocirculation over the Gulf of Guinea since the Last Glacial Maximum
1994
Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells
1998