Standout Papers

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−... 2011 2026 2016 2021 1.7k
  1. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures (2011)
    Myoung‐Jae Lee, Chang Bum Lee et al. Nature Materials

Immediate Impact

14 by Nobel laureates 25 from Science/Nature 117 standout
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Citing Papers

Experimental demonstration of highly reliable dynamic memristor for artificial neuron and neuromorphic computing
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Works of Man Chang being referenced

Self‐Limited Switching in Ta2O5/TaOx Memristors Exhibiting Uniform Multilevel Changes in Resistance
2015
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
2011 Standout

Author Peers

Author Last Decade Papers Cites
Man Chang 3147 832 1556 59 3.9k
Philip J. Kuekes 3268 746 925 32 3.9k
Victor Erokhin 1986 563 1042 188 3.1k
Yan Wang 2459 722 1114 51 2.9k
Tobias Cramer 1955 637 562 85 3.2k
Adam Z. Stieg 1710 992 317 58 2.7k
Tohru Tsuruoka 5452 1550 2714 131 6.4k
Xuema Li 3720 930 1402 33 4.4k
Yoeri van de Burgt 3544 538 1648 42 4.3k
Ye Zhuo 2380 523 1006 21 2.6k
Haifeng Ling 2695 722 900 108 3.2k

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