Citation Impact
Citing Papers
A GaN bulk crystal with improved structural quality grown by the ammonothermal method
2007 StandoutNobel
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Growth and applications of Group III-nitrides
1998
Photonic crystal laser lift-off GaN light-emitting diodes
2006 StandoutNobel
Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy
2010 StandoutNobel
Dynamic non-linear optical processes in semiconductors
1981
Many-body effects on optical gain in strained hexagonal and cubic GaN/AlGaN quantum well lasers
1997
Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices
2001 StandoutNobel
Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode
2005 StandoutNobel
Stimulated emission and lasing in whispering-gallery modes of GaN microdisk cavities
1999
Quantum ground state and single-phonon control of a mechanical resonator
2010 StandoutNatureNobel
Novel AlN/GaN insulated gate heterostructure field effect transistor with modulation doping and one-dimensional simulation of charge control
1997
Photoexcited carrier dynamics in AlInN/GaN heterostructures
2012
Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
2005
Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells
2013 StandoutNobel
Localized exciton dynamics in nonpolar (112¯) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
2005 StandoutNobel
Excitonic structure of bulk AlN from optical reflectivity and cathodoluminescence measurements
2005
Removal of thick (>100nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching
2004 StandoutNobel
High performance AlGaN/GaN power switch with HfO2 insulation
2009
A comprehensive review of ZnO materials and devices
2005 Standout
Intriguing Optoelectronic Properties of Metal Halide Perovskites
2016 Standout
Formation and reduction of pyramidal hillocks on m-plane {11¯00} GaN
2007 StandoutNobel
Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant
2000 StandoutNobel
Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates
2008 StandoutNobel
Large anisotropic adatom kinetics on nonpolar GaN surfaces: Consequences for surface morphologies and nanowire growth
2009
GaN-Based RF Power Devices and Amplifiers
2008 Standout
Effect of indium doping on the transient optical properties of GaN films
1999
Ga adsorption and desorption kinetics onM-plane GaN
2004
Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes
1998
Comprehensive characterization of hydride VPE grown GaN layers and templates
2001
Optical properties of InGaN quantum wells
1999 StandoutNobel
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
2006 StandoutNobel
Near-bandedge cathodoluminescence of an AlN homoepitaxial film
2004
Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells
2010 StandoutNobel
Gain spectra in cw InGaN/GaN MQW laser diodes
1997 StandoutNobel
Wide bandgap GaN-based semiconductors for spintronics
2004
Optical properties of extended and localized states in m-plane InGaN quantum wells
2013 StandoutNobel
Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth
2004 StandoutNobel
Room-Temperature Stimulated Emission from AlN at 214 nm
2006
Characterization of blue-green m-plane InGaN light emitting diodes
2009 StandoutNobel
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching
2004 StandoutNobel
Photo-induced changes in the complex index of refraction in conjugated polymer/fullerene blends
1998 StandoutNobel
Fabrication of GaN suspended microstructures
2001
Suppressing void defects in long wavelength semipolar (202¯1¯) InGaN quantum wells by growth rate optimization
2013 StandoutNobel
Growth of M-plane GaN films on γ-LiAlO2(100) with high phase purity
2003
Defect-mediated surface morphology of nonpolar m-plane GaN
2007 StandoutNobel
Stimulated emission and optical gain in ZnO epilayers grown by plasma-assisted molecular-beam epitaxy with buffers
2001
Room-temperature continuous-wave lasing in GaN/InGaN microdisks
2006 StandoutNobel
Recent Advances in the Liquid-Phase Syntheses of Inorganic Nanoparticles
2004 Standout
Degenerate four-wave mixing in semiconductor-doped glasses
1983
Room-temperature gain spectra and lasing in microcrystalline ZnO thin films
1998
GaN: Processing, defects, and devices
1999
Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well
2014 StandoutNobel
Ga N ∕ Al Ga N ultraviolet/infrared dual-band detector
2006
Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy
2005 StandoutNobel
Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN
2005 StandoutNobel
Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy
1999
Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy
2007 StandoutNobel
Carrier lifetimes in AlGaN quantum wells: electric field and excitonic effects
2008
AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)
2010
AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{\rm ON}} \times A$
2010
Effects of exciton localization on internal quantum efficiency of InGaN nanowires
2013 StandoutNobel
Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates
2006 StandoutNobel
Dynamics of carrier recombination and localization in AlGaN quantum wells studied by time-resolved transmission spectroscopy
2009
AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage
2011 StandoutNobel
Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off
1999
Efficient Luminescent Down-Shifting Detectors Based on Colloidal Quantum Dots for Dual-Band Detection Applications
2011 StandoutNobel
GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates
2000
Theoretical study of the two-dimensional electron mobility in strained III-nitride heterostructures
2001
Intrinsic electric fields in AlGaN quantum wells
2007
Exciton hopping inIn x Ga 1 − x N
2005
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2000 StandoutNature
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
Visible light-emitting diodes using a-plane GaN–InGaN multiple quantum wells over r-plane sapphire
2004
Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1−xN∕GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
2007 StandoutNobel
High power and high efficiency blue light emitting diode on freestanding semipolar (101¯1¯) bulk GaN substrate
2007 StandoutNobel
III–Nitride UV Devices
2005
Photoluminescence from highly excited AlN epitaxial layers
2008 StandoutNobel
AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage
2011 StandoutNobel
High quality AlN grown on SiC by metal organic chemical vapor deposition
2008 StandoutNobel
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Dynamics of optical gain in InxGa1−xN multi-quantum-well-based laser diodes
2000 StandoutNobel
Optical properties of doped InGaN/GaN multiquantum-well structures
1999 StandoutNobel
Efficient radiative recombination and potential profile fluctuations in low-dislocation InGaN∕GaN multiple quantum wells on bulk GaN substrates
2005
Combination of Indium–Tin Oxide and SiO2/AlN Dielectric Multilayer Reflective Electrodes for Ultraviolet-Light-Emitting Diodes
2013 StandoutNobel
Quantum-well width dependence of threshold current density in InGaN lasers
1999 StandoutNobel
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Works of M.A. Khan being referenced
Optical phase conjugation in Hg_1 −xCdxTe
1980
Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors
2003
Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals
2002
High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN
1996
AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN
2003
Lifetime of nonequilibrium carriers in high‐Al‐content AlGaN epilayers
2004
Exciton and carrier motion in quaternary AlInGaN
2003
Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mm
2005
Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications
2003
High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor
1998
AlGaN-based 280nm light-emitting diodes with continuous-wave power exceeding 1mW at 25mA
2004
Photoluminescence of AlGaN grown on bulk AlN substrates
2004
Piezoresistive effect in metal–semiconductor–metal structures on p-type GaN
2000
The 1.6-kV AlGaN/GaN HFETs
2006
DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates
1998
AlGaN -based 280nm light-emitting diodes with continuous wave powers in excess of 1.5mW
2004
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
2000
Double-scaled potential profile in a group-III nitride alloy revealed by Monte Carlo simulation of exciton hopping
2003
GaN homoepitaxy on freestanding (1100) oriented GaN substrates
2002
Deep ultraviolet light-emitting diodes using quaternary AlInGaN multiple quantum wells
2002
Carrier transport and recombination in InGaN/GaN heterostructures, studied by optical four‐wave mixing technique
2003
Bandgap-resonant optical phase conjugation in n-type Hg_1−xCd_xTe at 106 μm
1981
Gain spectra and stimulated emission in epitaxial (In,Al) GaN thin films
1996