M. Yoshimi

Electronics based on two-dimensional materials

Attosecond nonlinear polarization and light–matter energy transfer in solids

Optical-field-induced current in dielectrics

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Attosecond metrology: from electron capture to future signal processing

Single-event-induced charge collection and direct channel conduction in submicron MOSFETs

Basic mechanisms and modeling of single-event upset in digital microelectronics

Performance trends in high-end processors

Molecular Electronics with Carbon Nanotubes

Total dose induced latch in short channel NMOS/SOI transistors

Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits

FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

Parasitic bipolar gain in fully depleted n-channel SOI MOSFET's

Impact of the vertical SOI 'DELTA' structure on planar device technology

Scaling of MOS technology to submicrometer feature sizes

Optical-field-induced current in dielectrics

3-D ICs: a novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration

Strong-field and attosecond physics in solids

Polycrystalline silicon thin films processed with silicon ion implantation and subsequent solid-phase crystallization: Theory, experiments, and thin-film transistor applications

Photoluminescence and electroluminescence from porous silicon

Electronic States and Luminescence in Porous Silicon Quantum Dots: The Role of Oxygen

Scaling of MOS technology to submicrometer feature sizes

Organic Thin Film Transistors for Large Area Electronics

Deep-submicrometer channel design in silicon-on-insulator (SOI) MOSFET's

Colloquium: Strong-field phenomena in periodic systems

Fundamentals of Modern VLSI Devices

Radiation Effects in MOS Oxides

Influence of impact ionization on the drain conductance in InAs-AlSb quantum well heterostructure field-effect transistors

High-κ gate dielectrics: Current status and materials properties considerations

Two-dimensional simulation and measurement of high-performance MOSFETs made on a very thin SOI film

Analysis of the drain breakdown mechanism in ultra-thin-film SOI MOSFETs

Application of E-beam recrystallization to three-layer image processor fabrication

High-performance 0.10- mu m CMOS devices operating at room temperature

A study of photon emission from n-channel MOSFET's

Suppression of the floating-body effect in SOI MOSFET's by the bandgap engineering method using a Si/sub 1-x/Ge/sub x/ source structure