Citation Impact
Citing Papers
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Properties of low-pressure chemical vapor epitaxial GaN films grown using hydrazoic acid (HN3)
1997
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
2000 StandoutScience
Nitride‐based hetero‐field‐effect‐transistor‐type photosensors with extremely high photosensitivity
2013 Nobel
Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells
1999
Analysis of Time-Resolved Donor-Acceptor-Pair Recombination in MBE and MOVPE Grown GaN : Mg
2001
Photoluminescence of rapid-thermal annealed Mg-doped GaN films
2001
Temperature quenching of photoluminescence intensities in undoped and doped GaN
1999
Upconversion Nanoparticles: Design, Nanochemistry, and Applications in Theranostics
2014 Standout
Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques
2005 StandoutNobel
Exciton binding energies and band gaps in GaN bulk crystals
1998
Free exciton emission in GaN
1996 StandoutNobel
Electron energy-loss spectroscopy characterization of pyramidal defects in metalorganic vapor-phase epitaxy Mg-doped GaN thin films
2000
Luminescence properties of defects in GaN
2005 Standout
Intra- and interwell transitions in GaInN/GaN multiple quantum wells with built-in piezoelectric fields
1999
High internal and external quantum efficiency InGaN/GaN solar cells
2011 StandoutNobel
Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition
2003
Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes
2000 StandoutNobel
The doping process and dopant characteristics of GaN
2002
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
1999 StandoutNobel
Metalorganic Molecular Beam Epitaxy of InGaN Layers and Their Optical Properties
1999
Ground-state characteristics of an acceptor center in wide-gap semiconductors with a weak spin-orbit coupling
1998
Localized exciton dynamics in nonpolar (112¯) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
2005 StandoutNobel
Morphological evolution of InGaN/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition
2003
A comprehensive review of ZnO materials and devices
2005 Standout
Quantized states inGa 1 − x In x N / GaN
2000 StandoutNobel
Photoluminescence studies of excitonic transitions in GaN epitaxial layers
1998
Recombination dynamics of free and localized excitons inG a N / G a 0.93 Al 0.07 N
1998
Growth and deep ultraviolet picosecond time-resolved photoluminescence studies of AlN/GaN multiple quantum wells
2001
Local vibrational modes and compensation effects in Mg‐doped GaN
2003
High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm
2011 StandoutNobel
Relationship between crystallographic orientation and 3.42 eV emission bands in GaN grown by HVPE on Si substrate
1999
Optical properties of tensile-strained wurtzite GaN epitaxial layers
1997 StandoutNobel
Thermal treatment effect of the GaN buffer layer on the photoluminescence characteristics of the GaN epilayer
1999
Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells
1998
Quantum Dots for Live Cells, in Vivo Imaging, and Diagnostics
2005 StandoutScience
Competition between band gap and yellow luminescence in GaN and its relevance for optoelectronic devices
1996
Photoluminescence from GaN films grown by MBE on an substrate
1997
Optical modes within III-nitride multiple quantum well microdisk cavities
1998
Binding energy for the intrinsic excitons in wurtzite GaN
1996 StandoutNobel
Dimensionality of excitons in laser-diode structures composed ofIn x Ga 1 − x N
1999 StandoutNobel
Photoluminescence spectroscopy of Mg-doped GaN
1998
Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices
2003
Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Green and red emission in Ca implanted GaN samples
2001
Theoretical analysis of d electron effects on the electronic properties of wurtzite and zincblende GaN
2003
Growth and optical properties of InxAlyGa1−x−yN quaternary alloys
2001
Piezoelectric effects on the optical properties of GaN/AlxGa1−xN multiple quantum wells
1998
MBE growth and characterization of magnesium-doped gallium nitride
1998
Defect-related luminescence of Mg-doped n-GaN grown by hydride vapour-phase epitaxy
1998
High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates
2013 StandoutNobel
Optical properties of wurtzite GaN epilayers grown onA
1998 StandoutNobel
Cooling dynamics of excitons in GaN
1999 StandoutNobel
Oscillator strengths for optical band-to-band processes in GaN epilayers
1996
Nature of the 2.8 eV photoluminescence band in Mg doped GaN
1998
Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors
2013 StandoutNobel
Behavior of 2.8- and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities
1999
Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching
2004 StandoutNobel
Temperature-varied photoluminescence and magnetospectroscopy study of near-band-edge emissions in GaN
2001
Effect of laser irradiation on the luminescence of Mg and Si-doped GaN films
1999
III–nitrides: Growth, characterization, and properties
2000
Free excitons with n=2 in bulk GaN
1997
Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate
2011 StandoutNobel
Photoluminescence studies of GaN layers grown by hydride vapor phase epitaxy
2001
First-principles study on electronic and elastic properties of BN, AlN, and GaN
1998
Donor-acceptor photoluminescence of weakly compensated GaN:Mg
1999
Influence of defect states on the nonlinear optical properties of GaN
1999
Blue emission band in compensated GaN:Mg codoped with Si
2003
Electronic band structures and effective-mass parameters of wurtzite GaN and InN
1998
Metalorganic vapor-phase epitaxy-grown AlGaN materials for visible-blind ultraviolet photodetector applications
1999
Optical absorption near the band edge in GaN grown by metalorganic chemical-vapor deposition
1996
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Optical and microstructural studies of InGaN∕GaN single-quantum-well structures
2005
Band structure and fundamental optical transitions in wurtzite AlN
2003
Optical properties of InxGa1−xN alloys grown by metalorganic chemical vapor deposition
1998
Recent Advances in the Liquid-Phase Syntheses of Inorganic Nanoparticles
2004 Standout
Different character of the donor-acceptor pair-related 3.27 eV band and blue photoluminescence in Mg-doped GaN. Hydrostatic pressure studies
2000
Enhancement of Upconversion Emission of LaPO4:Er@Yb Core−Shell Nanoparticles/Nanorods
2008
Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC
1998 StandoutNobel
Upconversion Luminescent Materials: Advances and Applications
2014 Standout
Multi-Component Synthesis of a Buta-1,3-diene-Linked Covalent Organic Framework
2022 StandoutNobel
Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN
2005 StandoutNobel
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
2012 StandoutNobel
Strain effects on excitonic transitions in GaN: Deformation potentials
1996 StandoutNobel
Chemistry and Properties of Nanocrystals of Different Shapes
2005 Standout
Reactivation of Mg acceptor in Mg-doped GaN by nitrogen plasma treatment
2000
Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy
2007 StandoutNobel
Electronic structure calculations on nitride semiconductors
1999
Study of nonpolar m-plane InGaN∕GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition
2007 StandoutNobel
Alternating Current Driven Electroluminescence from ZnSe/ZnS:Mn/ZnS Nanocrystals
2009 StandoutNobel
Luminescences from localized states in InGaN epilayers
1997 StandoutNobel
Pressure dependence of the blue luminescence in Mg-doped GaN
2000
Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates
2006 StandoutNobel
Core/Shell Nanoparticles: Classes, Properties, Synthesis Mechanisms, Characterization, and Applications
2011 Standout
Free Excitons in GaN
1996 StandoutNobel
Localized exciton and its stimulated emission in surface mode from single-layerIn x Ga 1 − x N
1998
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Exciton localization in InGaN quantum well devices
1998 StandoutNobel
Band-gap and k.p. parameters for GaAlN and GaInN alloys
1999
LEDs for Solid-State Lighting: Performance Challenges and Recent Advances
2009
Atomic model for blue luminescences in Mg-doped GaN
1999
Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy
2000
MOVPE of GaInN heterostructures and quantum wells
1998
Free excitons in wurtzite GaN
2001
Spatially resolved cathodoluminescence spectra of InGaN quantum wells
1997 StandoutNobel
Luminescence Intensity Reduction in Mg-Doped GaN Grown by Metalorganic Chemical Vapor Phase Epitaxy
2001
Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy
2003 StandoutNobel
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN
2000
Free-carrier and phonon properties ofn- andp-type hexagonal GaN films measured by infrared ellipsometry
2000
Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O
1997
Organometallic Synthesis and Spectroscopic Characterization of Manganese-Doped CdSe Nanocrystals
2000 StandoutNobel
Time-resolved photoluminescence studies of an ionized donor-bound exciton in GaN
1999
Band parameters for nitrogen-containing semiconductors
2003 Standout
Structural and optical analysis of epitaxial GaN on sapphire
1997
Mechanisms of Nucleation and Growth of Nanoparticles in Solution
2014 Standout
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
2012 StandoutNobel
On the origin of the 2.8 eV blue emission in p-type GaN:Mg : A time-resolved photoluminescence investigation
2001
Effective masses and valence-band splittings in GaN and AlN
1997
Yellow luminescence and related deep states in undoped GaN
1997
Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
1997
Time-resolved study of yellow and blue luminescence in Si- and Mg-doped GaN
2000
Nature and elimination of yellow-band luminescence and donor–acceptor emission of undoped GaN
1999
Works of M. Smith being referenced
Synthesis and properties of Cd/sub 1-x/Mn/sub x/S diluted magnetic semiconductor nanoparticles
1994
Acceptor-bound exciton recombination dynamics in p-type GaN
1995
Free excitonic transitions in GaN, grown by metal-organic chemical-vapor deposition
1996
Exciton-phonon interaction in InGaN/GaN and GaN/AlGaN multiple quantum wells
1997
Photoluminescence studies of band-edge transitions in GaN epitaxial layers grown by plasma-assisted molecular beam epitaxy
1996
Fundamental optical transitions in GaN
1996
Time-resolved photoluminescence studies of InGaN epilayers
1996
Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes
1997
Dynamics of a band-edge transition in GaN grown by molecular beam epitaxy
1995
Optical Transitions and Recombination Lifetimes in GaN and InGaN Epilayers, and InGaN/GaN and GaN/AlGaN Multiple Quantum Wells
1996
Optical transitions in InGaN/AlGaN single quantum wells
1997
Excitonic recombination in GaN grown by molecular beam epitaxy
1995
Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures
2000
Optical transitions in GaN/AlxGa1−xN multiple quantum wells grown by molecular beam epitaxy
1996
Neutral-donor-bound exciton recombination dynamics in GaN grown by metalorganic chemical vapor deposition
1995
Mechanisms of band-edge emission in Mg-doped p-type GaN
1996