M. Shoga

Memristive devices for computing

Terahertz-field-induced insulator-to-metal transition in vanadium dioxide metamaterial

Electrical switching and Mott transition in VO₂

Radiation-induced soft errors in advanced semiconductor technologies

The design of radiation-hardened ICs for space: a compendium of approaches

Basic mechanisms and modeling of single-event upset in digital microelectronics

Electronic structure and transport measurements of amorphous transition-metal oxides: observation of Fermi glass behavior

Comparison of error rates in combinational and sequential logic

A comparison of SEU tolerance in high-speed SiGe HBT digital logic designed with multiple circuit architectures

Millimeter-Wave Technology for Automotive Radar Sensors in the 77 GHz Frequency Band

Single-word multiple-bit upsets in static random access devices

Switching effect and the metal–insulator transition in electric field

On the Potential of SiGe HBTs for Extreme Environment Electronics

Upset hardened memory design for submicron CMOS technology

Theory of Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated Circuits

Relaxation oscillations in NbO2 thin film switching devices

Simulation of SEE-induced charge collection in UHV/CVD SiGe HBTs

Single event upset at gigahertz frequencies

Interpretation of recent transient on-state data in thin chalcogenide glass and NbO₂ threshold switching material

Double upsets from glancing collisions: a simple model verified with flight data (SRAM)