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Citing Papers
A GaN bulk crystal with improved structural quality grown by the ammonothermal method
2007 StandoutNobel
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Optical Properties of ZnO Nanostructures
2006 Standout
An efficient method for LEED crystallography
1990 StandoutNobel
Real-Space Observation of the 2×1 Structure of Chemisorbed Oxygen on Ni(110) by Scanning Tunneling Microscopy
1984 StandoutNobel
Gallium adsorption onto (1120) gallium nitride surfaces
2004 StandoutNobel
Effect of Controlled Growth Dynamics on the Microstructure of Nonpolar a-Plane GaN Revealed by X-ray Diffraction
2009
Theory of the scanning tunneling microscope
1985 Standout
Microstructure of heteroepitaxial GaN revealed by x-ray diffraction
2003
Defect characterization in epitaxial ZnO/epi-GaN/Al2O3 heterostructures: transmission electron microscopy and triple-axis X-ray diffractometry
2000
Structural and optical characterization of thick InGaN layers and InGaN/GaN MQW grown by molecular beam epitaxy
2002
Interface roughness of InAs/AlSb superlattices investigated by x-ray scattering
1996 StandoutNobel
Effect of GaN Buffer Layer Growth Pressure on the Device Characteristics of AlGaN/GaN High-Electron-Mobility Transistors on Si
2009
Growth of Bulk GaN with Low Dislocation Density by the Ammonothermal Method Using Polycrystalline GaN Nutrient
2007 StandoutNobel
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2002
Luminescence properties of defects in GaN
2005 Standout
The progress of AlN bulk growth and epitaxy for electronic applications
2009
Growth study and impurity characterization of Al In1−N grown by metal organic chemical vapor deposition
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A comprehensive review of ZnO materials and devices
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Surface diffusion of oxygen atoms individually observed by STM
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2002
Anisotropic atomic motions in structural analysis by low energy electron diffraction
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2005
Unusual luminescence lines in GaN
2003
Scanning tunneling microscopy
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Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy
2006 StandoutNobel
Comprehensive characterization of hydride VPE grown GaN layers and templates
2001
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
2006 StandoutNobel
Ammonothermal growth of bulk GaN
2008 StandoutNobel
Single-element elliptical hard x-ray micro-optics
2003 StandoutNobel
Low-energy electron-diffraction analysis of the Rh(110)-(2 × 1)-O phase
1993 StandoutNobel
Reconstruction and subsurface lattice distortions in the (2 × 1)O-Ni(110) structure: A LEED analysis
1990
Analysis of the Defect Structure of Epitaxial GaN
1999
Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency
2011 StandoutNobel
Anisotropic strain and phonon deformation potentials in GaN
2007 StandoutNobel
Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping
2002
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films
2004
Real-structure effects in the dynamical theory of grazing incidence x-ray diffraction
1994
Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence
2002 StandoutNobel
Growth of M-plane GaN films on γ-LiAlO2(100) with high phase purity
2003
LEED structure analysis of the clean and (2×1)H covered Pd(110) surface
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Defect-mediated surface morphology of nonpolar m-plane GaN
2007 StandoutNobel
The effect of temperature and ammonia flux on the surface morphology and composition of InxAl1−xN epitaxial layers
2009
Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
2011 StandoutNobel
Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
2009 StandoutNobel
Anisotropic thermal displacements of adsorbed atoms and molecules on surfaces studied by low-energy electron diffraction
1995 StandoutNobel
Scanning tunneling microscopy
1985 StandoutNobel
X-ray diffraction analysis of the defect structure in epitaxial GaN
2000
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
2009 StandoutNobel
X-ray reflection and transmission by rough surfaces
1995
Studies of Liquid Crystalline Self-Assembly of GdF3 Nanoplates by In-Plane, Out-of-Plane SAXS
2011
Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy
2005 StandoutNobel
Strain-related structural and vibrational properties of thin epitaxialAlN
2004
Growth of and AlGaN by MOCVD using triethylgallium and tritertiarybutylaluminium
1997
Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy
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Novel aspects of the growth of nitrides by MOVPE
2001 StandoutNobel
AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage
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Strain in cracked AlGaN layers
2002 StandoutNobel
Phonon mode behavior in strained wurtziteAl N ∕ Ga N
2005 StandoutNobel
Gallium nitride materials - progress, status, and potential roadblocks
2002 StandoutNobel
A LEED structural analysis of the Co(100) surface
1991 StandoutNobel
Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy
2003 StandoutNobel
Basal Plane Stacking-Fault Related Anisotropy in X-ray Rocking Curve Widths of m-Plane GaN
2008
Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers
2005
Structural analyses of the c(2 × 4)-N + 2O and the (2 × 1)-N phases on Rh(110) by low-energy electron diffraction
1995 StandoutNobel
High-quality ZnO epilayers grown on Zn-face ZnO substrates by plasma-assisted molecular beam epitaxy
2004
Imaging by parabolic refractive lenses in the hard X-ray range
1999
AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage
2011 StandoutNobel
Band parameters for nitrogen-containing semiconductors
2003 Standout
Low-energy electron diffraction analysis of the structure of a Cs-O/Ru(0001) coadsorbate phase
1992 StandoutNobel
Compositional dependence of the strain-free optical band gap in InxGa1−xN layers
2001
Disclosing the Complex Structure of UiO-66 Metal Organic Framework: A Synergic Combination of Experiment and Theory
2011 Standout
Symmetry and structure of the reconstructed Ni(110)-(2 × 1)O surface
1990
Self-Assembly of Colloidal Nanocrystals: From Intricate Structures to Functional Materials
2016 Standout
In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy
2014 StandoutNobel
Combination of Indium–Tin Oxide and SiO2/AlN Dielectric Multilayer Reflective Electrodes for Ultraviolet-Light-Emitting Diodes
2013 StandoutNobel
The role of high-temperature island coalescence in the development of stresses in GaN films
2001
Hydrogen-Induced Subsurface Reconstruction of Cu(110)
1986
Works of M. Schuster being referenced
Determination of the dispersive correction f'(E) to the atomic form factor from X-ray reflection
1992
Surface analysis by spectroscopy of Auger electrons induced by surface channeled ions
1983
X-ray standing-wave study of( AlAs ) m ( GaAs ) n
1999
Growth of high quality InGaAsN heterostructures and their laser application
2001
High-resolution X-ray diffraction and X-ray standing wave analyses of (AlAs)m(GaAs)nshort-period superlattices
1995
Fluorescence x-ray standing wave study on (AlAs)(GaAs) superlattices
1999
Parallel-beam coupling into channel-cut monochromators using curved graded multilayers
1995
Determination of the chemical composition of distorted InGaN/GaN heterostructures from x-ray diffraction data
1999
Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry
1998