M. Schürmann

Diquarks and Exotic Spectroscopy

Direct monitoring of opto-mechanical switching of self-assembled monolayer films containing the azobenzene group

A review of Ga2O3 materials, processing, and devices

An anchoring strategy for photoswitchable biosensor technology: azobenzene-modified SAMs on Si(111)

Charge redistribution at GaN–Ga2O3 interfaces: a microscopic mechanism for low defect density interfaces in remote-plasma-processed MOS devices prepared on polar GaN faces

Remediation technologies for metal-contaminated soils and groundwater: an evaluation

GaN n- and p-type Schottky diodes: Effect of dry etch damage

Treatments of water hyacinth tissue to obtain useful products

Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors

Series of Photoswitchable Azobenzene-Containing Metal–Organic Frameworks with Variable Adsorption Switching Effect

Electrical effects of plasma damage in p-GaN

Charge redistribution at GaNGa2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces

Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

Diquarks

Local Atomic Environment of Si Suboxides at theSiO2/Si(111)Interface Determined by Angle-Scanned Photoelectron Diffraction

Recessed gate GaN field effect transistor

Laser microprobe mass analysis: achievements and aspects.

EXCLUSIVE PHOTON-PROTON REACTIONS AT MODERATELY LARGE MOMENTUM TRANSFER