Citation Impact

Citing Papers

Coulomb engineering of the bandgap and excitons in two-dimensional materials
2017 StandoutNobel
Double embedded photonic crystals for extraction of guided light in light-emitting diodes
2012 StandoutNobel
Impact of photonic crystals on LED light extraction efficiency: approaches and limits to vertical structure designs
2010
Raman scattering from phonon-polaritons in GaN
2000 StandoutNobel
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
2014 StandoutNobel
Group III-nitride lasers: a materials perspective
2011 StandoutNobel
Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
1999
In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN
2000
Structural and vibrational properties of GaN
1999 StandoutNobel
High-power InGaN-based blue laser diodes with a long lifetime
1998 StandoutNobel
High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes
2011 StandoutNobel
Time-resolved exciton transfer in GaAs/AlxGa1−xAs double-quantum-well structures
1992
Electronic Energy Transfer in CdSe Quantum Dot Solids
1996 StandoutNobel
Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques
2005 StandoutNobel
Determination of Internal Loss in Nitride Lasers from First Principles
2010
Recent progress in high-power blue-violet lasers
2003
Fluorescence intermittency in single cadmium selenide nanocrystals
1996 StandoutNatureNobel
Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth
2008 StandoutNobel
Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes
2000 StandoutNobel
Growth condition dependence of GaN crystal structure on (0 0 1)GaAs by hydride vapor-phase epitaxy
1998
Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN
2010 StandoutNobel
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
1999 StandoutNobel
Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors
2013 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
Quantized states inGa1−xInxN/GaNheterostructures and the model of polarized homogeneous quantum wells
2000 StandoutNobel
Optical gain for wurtzite GaN with anisotropic strain in c plane
1997
Photoluminescence studies of excitonic transitions in GaN epitaxial layers
1998
Optical properties of tensile-strained wurtzite GaN epitaxial layers
1997 StandoutNobel
High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers
1999
Comparison of output power of InGaN laser diodes for different Al compositions in the AlGaN n-cladding layer
2009
Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells
2002 StandoutNobel
NK-edge x-ray-absorption study of heteroepitaxial GaN films
1997 StandoutNobel
Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green
2009
Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
2003 StandoutNobel
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
2006 StandoutNobel
Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202¯1¯) GaN substrates
2013 StandoutNobel
Higher efficiency InGaN laser diodes with an improved quantum well capping configuration
2002 StandoutNobel
Transient four-wave-mixing spectroscopy on gallium nitride: Energy splittings of intrinsic excitonic resonances
1997 StandoutNobel
Optical properties of extended and localized states in m-plane InGaN quantum wells
2013 StandoutNobel
Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth
2004 StandoutNobel
Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction
2000
Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes
2011 StandoutNobel
Optical properties of wurtzite GaN epilayers grown onA-plane sapphire
1998 StandoutNobel
III–nitrides: Growth, characterization, and properties
2000
Recent progress in III–V quantum optoelectronic devices
1994
Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy
2002 StandoutNobel
First-principles study on electronic and elastic properties of BN, AlN, and GaN
1998
The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
1998 StandoutScienceNobel
Improvement in Lasing Characteristics of GaN-based Vertical-Cavity Surface-Emitting Lasers Fabricated Using a GaN Substrate
2009
Enhanced modulation bandwidth for strain-compensated InGaAlAs-InGaAsP MQW lasers
1998 StandoutNobel
Measurement of extraction and absorption parameters in GaN-based photonic-crystal light-emitting diodes
2010
Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well
2014 StandoutNobel
Group III-nitride based hetero and quantum structures
2000
Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy
2005 StandoutNobel
Enhancement of Exciton–Phonon Scattering from Monolayer to Bilayer WS2
2018 StandoutNobel
Freestanding GaN‐substrates and devices
2003
Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate
2001
Design and performance of asymmetric waveguide nitride laser diodes
2000
A pump and probe study of photoinduced internal field screening dynamics in an AlGaN/GaN single-quantum-well structure
2000 StandoutNobel
Probing Interlayer Interactions in Transition Metal Dichalcogenide Heterostructures by Optical Spectroscopy: MoS2/WS2 and MoSe2/WSe2
2015
Quantum well carrier sweep out: relation to electroabsorption and exciton saturation
1991
Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates
2006 StandoutNobel
Optical waveguide simulations for the optimization of InGaN-based green laser diodes
2010 StandoutNobel
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Biaxial strain dependence of exciton resonance energies in wurtzite GaN
1997 StandoutNobel
Optical band gap in Ga1−xInxN (0<x<0.2) on GaN by photoreflection spectroscopy
1998 StandoutNobel
Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy
2003 StandoutNobel
Maskless Lateral Epitaxial Overgrowth of GaN on Sapphire
1999
Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes
2011 StandoutNobel
Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth
2000 StandoutNobel
InGaN-based blue light-emitting diodes and laser diodes
1999 StandoutNobel
Optical polarization characteristics of InGaN∕GaN light-emitting diodes fabricated on GaN substrates oriented between (101¯) and (101¯1¯) planes
2008 StandoutNobel
Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire
2000
Electronic band structure of wurtzite GaN under biaxial strain in theMplane investigated with photoreflectance spectroscopy
2002
Band parameters for nitrogen-containing semiconductors
2003 Standout
m -plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers
2009 StandoutNobel
Anisotropic Optical Matrix Elements in Strained GaN Quantum Wells on Semipolar and Nonpolar Substrates
2007

Works of M. Nido being referenced

Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact
1999
Single Domain Hexagonal GaN Films on GaAs (100) Vicinal Substrates Grown by Hydride Vapor Phase Epitaxy
1996
Reduction of Internal Loss and Threshold Current in a Laser Diode with a Ridge by Selective Re-Growth (RiS-LD)
2002
Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact
1999
Uniaxial Stress Effects On Valence Band Structures Of GaN
1997
Reflectance spectroscopy on GaN films under uniaxial stress
1997
Analysis of differential gain in InGaAs-InGaAsP compressive and tensile strained quantum-well lasers and its application for estimation of high-speed modulation limit
1993
Hole-tunneling dynamics in biased GaAs/Al0.35Ga0.65As asymmetric double quantum wells
1991
Resonant-tunneling transfer times between asymmetric GaAs/Al0.35Ga0.65As double quantum wells
1990
Nonresonant electron and hole tunneling times in GaAs/Al0.35Ga0.65As asymmetric double quantum wells
1990
Slow carrier-phonon interaction in InGaAs-InGaAsP multiquantum well investigated by time-development of carrier temperature and gain
1995
High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy
1998
Resonant and nonresonant tunneling in GaAs/AlxGa1−xAs asymmetric double quantum wells
1991
Effect of Biaxial Strain on Cubic and Hexagonal GaN Analyzed by Tight-Binding Method
1995
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