Citation Impact
Citing Papers
Handheld deep ultraviolet emission device based on aluminum nitride quantum wells and graphene nanoneedle field emitters
2012 StandoutNobel
Group III-nitride lasers: a materials perspective
2011 StandoutNobel
UV Light-Emitting Diode Fabricated on Hetero-ELO-Grown Al0.22Ga0.78N with Low Dislocation Density
2002 StandoutNobel
Analysis of the physical processes responsible for the degradation of deep-ultraviolet light emitting diodes
2010
Submilliwatt operation of AlGaN-based ultraviolet light-emitting diode using short-period alloy superlattice
2001
Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes
2010 StandoutNobel
Advances in group III-nitride-based deep UV light-emitting diode technology
2010 Standout
Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System
1985 StandoutNobel
Chlorine-Based Dry Etching of III/V Compound Semiconductors for Optoelectronic Application
1998 StandoutNobel
Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes
2010 StandoutNobel
Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures
2003 StandoutNobel
Control of growth mode in Mg-doped GaN/AlN heterostructure
2014 StandoutNobel
Recombination dynamics of a 268nm emission peak in Al0.53In0.11Ga0.36N∕Al0.58In0.02Ga0.40N multiple quantum wells
2006 StandoutNobel
Avalanche photodiodes and quenching circuits for single-photon detection
1996 Standout
Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy
2007 StandoutNobel
Second-harmonic generation of blue light in LiNbO3 crystal with periodic ferroelectric domain structures
1991
All-solid-state microscope-based system for picosecond time-resolved photoluminescence measurements on II-VI semiconductors
1992
Band lineup for a GaInP/GaAs heterojunction measured by a high-gain N p n heterojunction bipolar transistor grown by metalorganic chemical vapor deposition
1989
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Optical characterization of III-nitrides
2002 StandoutNobel
Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells
2002 StandoutNobel
The formation of crystalline defects and crystal growth mechanism in In Ga1−N/GaN heterostructure grown by metalorganic vapor phase epitaxy
1998 StandoutNobel
Correlation between luminescence and compositional striations in InGaN layers grown on miscut GaN substrates
2007
InGaN/GaN/AlGaN-based laser diodes grown on epitaxially laterally overgrown GaN
1999 StandoutNobel
Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes
2001
Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management
2002
High-dynamic-range laser amplitude and phase noise measurement techniques
2001
InGaN/GaN/AiGaN-Based Laser Diodes with an Estimated Lifetime of Longer than 10,000 Hours
1997 StandoutNobel
The initial stage of LPE growth of InGaAsP on GaAs in the region of immiscibility
1986 StandoutNobel
InGaN multiquantum-well-structure laser diodes with GaN-AlGaN modulation-doped strained-layer superlattices
1998 StandoutNobel
Four-dimensional simulation of ultrashort optical shock radiation generated by guided-wave frequency doubling of a pulsed laser diode
1992 Nobel
Experimental and theoretical investigations of optical properties of GaN/AlGaN MQW nanostructures. Impact of built-in polarization fields
2009 StandoutNobel
Directly diode-pumped, Kerr-lens mode-locked, few-cycle Cr:ZnSe\n oscillator
2019 StandoutNobel
GaxIn1−xP Liquid phase epitaxial growth on (001), (111)a, and (111)b GaAs substrates
1983
InGaN/GaN/AIGaN-Based Laser Diodes With an Estimated Lifetime of Longer Than 10,000 Hours
1998 StandoutNobel
Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect
2009 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Effect of Lattice Mismatch on the Solidus Compositions of GaxIn1-xP Liquid Phase Epitaxial Crystals
1983
Growth of InGaP epitaxial layers by liquid phase electro-epitaxy
1991 StandoutNobel
The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
1997 StandoutNobel
Trench-Shaped Defects on AlGaInN Quantum Wells Grown under Different Growth Pressures
2013 StandoutNobel
Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates
2013 StandoutNobel
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
2009 StandoutNobel
Group III-nitride based hetero and quantum structures
2000
Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells
2001
Direct observation of uniform optical properties from microphotoluminescence mapping of InGaN quantum wells grown on slightly misoriented GaN substrates
2008
Survey on Free Space Optical Communication: A Communication Theory Perspective
2014 Standout
True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy
2013 StandoutNobel
Effect of lattice mismatch between epitaxial layer and substrate on immiscibility of InGaAsP/GaAs LPE layers
1988 StandoutNobel
Group-velocity-matched second-harmonic generation: An efficient scheme for femtosecond ultraviolet pulse generation in periodically domain-inverted β-BaB2O4
1993 StandoutNobel
Fabrication and characteristics of ion beam etched cavity InP/InGaAsP BH lasers
1987
Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum Wells
2001
Gallium nitride materials - progress, status, and potential roadblocks
2002 StandoutNobel
Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping
2006 StandoutNobel
Development of high efficiency 255–355 nm AlGaN‐based light‐emitting diodes
2011 StandoutNobel
Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells
2002 StandoutNobel
III–Nitride UV Devices
2005
LPE Growth of GaInAsP on (100)GaAs by a Two-Phase-Solution Technique
1984
Novel UV devices on high-quality AlGaN using grooved underlying layer
2009 StandoutNobel
High quality AlN grown on SiC by metal organic chemical vapor deposition
2008 StandoutNobel
Band parameters for nitrogen-containing semiconductors
2003 Standout
Crack-Free AlN/GaN Distributed Bragg Reflectors on AlN Templates
2012 StandoutNobel
Dielectric function spectra of GaN, AlGaN, and GaN/AlGaN heterostructures
2001
Comparison between optical and electrical interconnects based on power and speed considerations
1988
Ultraviolet light-emitting diodes based on group three nitrides
2008
Works of M. Kume being referenced
Metalorganic Vapor Phase Epitaxy Growth of a High-Quality GaN/InGaN Single Quantum Well Structure Using a Misoriented SiC Substrate
1997
Noise characteristics of a Nd:YVO_4 laser pumped by laser diode modulated at high frequency
1994
A new chemical etching technique for formation of cavity facets of (GaAl)As lasers
1985
Picosecond blue light pulse generation by frequency doubling of a gain-switched GaAlAs laser diode with saturable absorbers
1990
Room Temperature 339 nm Emission from Al0.13Ga0.87N/Al0.10Ga0.90N Double Heterostructure Light-Emitting Diode on Sapphire Substrate
2000
Orientation Dependence of LPE Growth Behavior of GaxIn1-xP on (100) and (111)B GaAs Substrates
1982
A novel high-power laser structure with current-blocked regions near cavity facets
1987
Low operating current self-sustained pulsation GaAlAs laser diodes with a real refractive index guided structure
1994