Citation Impact
Citing Papers
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wells
1989 StandoutNobel
Thermal maps of gases in heterogeneous reactions
2013 StandoutNatureNobel
MOVPE growth of GaAs using a N2 carrier
1992
Space-Resolved Profiling Relevant in Heterogeneous Catalysis
2009
Heavily doped GaAs:Se. I. Photoluminescence determination of the electron effective mass
1990
Growth and characterization of device quality GaAs produced by laser-assisted atomic layer epitaxy using triethylgallium
1993
Mass spectrometry study of ZnS atomic layer epitaxy process
1988
Nanocomposites: synthesis, structure, properties and new application opportunities
2009 Standout
Low temperature growth of GaAs and AlAs by direct reaction between GaCl3, AlCl3 and AsH3
1991
Atomic Layer Deposition: An Overview
2009 Standout
Compensation in heavily doped n-type InP and GaAs
1985
Photoinduced reactivity of titanium dioxide
2004 Standout
N- type doping of gallium antimonide and aluminum antimonide grown by molecular beam epitaxy using lead telluride as a tellurium dopant source
1988 StandoutNobel
In Situ Monitoring of Surface Kinetics in GaAs Atomic Layer Epitaxy by Surface Photo-Absorption Method
1991
Experimental and theoretical investigations of optical properties of GaN/AlGaN MQW nanostructures. Impact of built-in polarization fields
2009 StandoutNobel
Temperature programmed desorption study of gallium chloride adsorbed on GaAs surfaces
1991
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Heavily doped GaAs:Se. II. Electron mobility
1990
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Ultrathin Organic Films Grown by Organic Molecular Beam Deposition and Related Techniques
1997 Standout
Thermodynamical Analyses and Luminescence Properties of Vapor-Grown ZnSxSe1-x
1987 StandoutNobel
Heavily carbon doped p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy
1989
On the practical applications of MBE surface phase diagrams
1987
Free-to-bound radiative recombination in highly conducting InN epitaxial layers
2004 StandoutNobel
Advances in MOVPE, MBE, and CBE
1992
Chemical vapour deposition of coatings
2003
Gallium nitride materials - progress, status, and potential roadblocks
2002 StandoutNobel
Atomic layer epitaxy of GaAs from tertiarybutylarsine and triethylgallium
1995
Electron Transport in InAs/AlSb Quantum Wells: Interface Sequencing Effects
1989 StandoutNobel
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
2004 StandoutNobel
Thermal Desorption of Galliumchloride Adsorbed on GaAs (100)
1991
Control of strain in GaN by a combination of H2 and N2 carrier gases
2001 StandoutNobel
Atomic layer epitaxy
1986
A simple method for calculation of the composition of VPE grown GaxIn1−xAs layers as a function of growth parameters
1984
Electrical properties and photoluminescence of Te-doped GaAs grown by molecular beam epitaxy
1982
Works of M. Heyen being referenced
A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAs
1986
Modeling of chemical vapor deposition
1982
Vapour phase growth of InP from the In-PH3-HCl-H2 system
1984
Modeling of chemical vapor deposition
1982
Growth of extremely uniform III–V compound semiconductor layers by LP-MOVPE by application of the gas foil technique for substrate rotation
1991
Electron mobility in vapor-grown GaAs films
1978
On the effect of carrier gas on growth conditions in MOCVD reactors; Raman study of local temperature
1984
Conditions for VPE growth of AlxGa1−xAs alloys in inorganic transport systems
1981
Mass spectrometric investigation of gas switching in an InGaAsP MOVPE system
1986
Kinetics of GaAs growth by low pressure MO-CVD
1984