Standout Papers

Ni/Si-Based Ohmic Contacts to p- and n-Type GaN 1996 2026 2006 2016 21
  1. Ni/Si-Based Ohmic Contacts to p- and n-Type GaN (1997)
    E. Kamińska, A. Piotrowska et al. MRS Proceedings
  2. Ohmic Contact to n-GaN with TiN Diffusion Barrier (1996)
    E. Kamińska, A. Piotrowska et al. MRS Proceedings

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Works of M. Guziewicz being referenced

Electrical and optical properties of NiO films deposited by magnetron sputtering
2011
Ohmic Contact to n-GaN with TiN Diffusion Barrier
1996 StandoutNobel
Superconducting single-photon detectors designed for operation at 1.55-µm telecommunication wavelength
2006
Ni/Si-Based Ohmic Contacts to p- and n-Type GaN
1997 StandoutNobel
Ohmic Contacts To GaN by Solid-Phase Regrowth
1997 Nobel
Extremely low temperature growth of ZnO by atomic layer deposition
2008
Atomic layer deposition of thin films of ZnSe—structural and optical characterization
2003
Rankless by CCL
2026