Citation Impact
Citing Papers
Ab initiostudy of structural, dielectric, and dynamical properties of GaN
1998
Solutions able to reproduce in vivo surface‐structure changes in bioactive glass‐ceramic A‐W3
1990 Standout
How useful is SBF in predicting in vivo bone bioactivity?
2006 Standout
Novel bioactive materials with different mechanical properties
2003 Standout
Ab‐initiosimulations of materials using VASP: Density‐functional theory and beyond
2008 Standout
High-resolution terahertz reflective imaging and image restoration
2010
A room-temperature polarization-sensitive CMOS terahertz camera based on quantum-dot-enhanced terahertz-to-visible photon upconversion
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Optical polarization characteristics of semipolar (303¯1) and (303¯1¯) InGaN/GaN light-emitting diodes
2012 StandoutNobel
Quantum computers
2010 StandoutNature
Metal–Organic Frameworks as Efficient Materials for Drug Delivery
2006 Standout
Accurate Band Gaps of Semiconductors and Insulators with a Semilocal Exchange-Correlation Potential
2009 Standout
Bioactive glass ceramics: properties and applications
1991 Standout
Terahertz quantum-cascade lasers
2007 Standout
Structural and vibrational properties of GaN
1999 StandoutNobel
Infrared Lattice Absorption in Wurtzite GaN
1999
First-principles calculations for point defects in solids
2014 Standout
Properties of molecular-beam epitaxy-grown GaNAs from optical spectroscopy
1998
Thermal conductivity and phonon linewidths of monolayer MoS2 from first principles
2013
First-principles calculations of indirect Auger recombination in nitride semiconductors
2015
Luminescence properties of defects in GaN
2005 Standout
Optical-phonon confinement and scattering in wurtzite heterostructures
1998
A New Property of MCM-41: Drug Delivery System
2000 Standout
Towards high-power mid-infrared emission from a fibre laser
2012 Standout
Ga-doping effects on electrical and luminescent properties of ZnO:(La,Eu)OF red phosphor thin films
2003 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
Quantized states inGa 1 − x In x N / GaN
2000 StandoutNobel
Study of strain and disorder of InxGa1−xP/(GaAs, graded GaP) (0.25≤x≤0.8) using spectroscopic ellipsometry and Raman spectroscopy
1994
Effect of doping concentration on the performance of terahertz quantum-cascade lasers
2005
Effects of the isotopic composition on the fundamental gap of CuCl
1998
Short-wavelength (λ≈3.05μm) InP-based strain-compensated quantum-cascade laser
2007
Electron-phonon interactions from first principles
2017 Standout
Flexible Porous Metal-Organic Frameworks for a Controlled Drug Delivery
2008 Standout
Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy
2006
Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
2009 StandoutNobel
Phonon density of states of bulk gallium nitride
1998 StandoutNobel
Realization of crack-free and high-quality thick Al Ga1−N for UV optoelectronics using low-temperature interlayer
2000 StandoutNobel
Brillouin scattering study of bulk GaN
1999 StandoutNobel
Raman analysis of phonon lifetimes in AlN and GaN of wurtzite structure
1999 StandoutNobel
Raman scattering by surface polaritons in cubic GaN epitaxial layers
1997
Analysis of limitations to wallplug efficiency and output power for quantum cascade lasers
2006
GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
1985 Standout
Anisotropic strain and phonon deformation potentials in GaN
2007 StandoutNobel
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
Kinetics and gas-surface dynamics of GaN homoepitaxial growth using NH3-seeded supersonic molecular beams
2001 StandoutNobel
Additional phonon modes and close satellite valleys crucialfor electron transport in hexagonal gallium nitride
2004
Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy
2002 StandoutNobel
Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN
1997
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Defect-mediated surface morphology of nonpolar m-plane GaN
2007 StandoutNobel
Probing the AlxGa1−xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale
2002 StandoutNobel
Long-wavelength lattice dynamics of In1−xGaxAsyP1−y alloys
1984
Raman scattering in a Ga1−xInxP strained heterostructure
1989 StandoutNobel
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
1999 Standout
Phonons and related crystal properties from density-functional perturbation theory
2001 Standout
Self-consistentG W
2007 Standout
Influence of the interface composition of InAs/AlSb superlattices on their optical and structural properties
1995 StandoutNobel
ShengBTE: A solver of the Boltzmann transport equation for phonons
2014 Standout
Strain in cracked AlGaN layers
2002 StandoutNobel
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Phonon mode behavior in strained wurtziteAl N ∕ Ga N
2005 StandoutNobel
Effects of the material polarity on the green emission properties of InGaN∕GaN multiple quantum wells
2006
Strain Modification of GaN in AlGaN/GaN Epitaxial Films
1999 StandoutNobel
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
An attenuated-total-reflection study on the surface phonon-polariton in GaN
2000 StandoutNobel
Group III nitride semiconductors for short wavelength light-emitting devices
1998
Properties of strained wurtzite GaN and AlN:Ab initiostudies
2002
Growth and characterization of cubic GaN
1997
Isotope effects on the optical spectra of semiconductors
2005
ZnO films grown under the oxygen-rich condition
2000
Infrared reflectivity spectra and Raman spectra of Ga1−xAlxAs mixed crystals
1979
Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy
2014 StandoutNobel
Band parameters for nitrogen-containing semiconductors
2003 Standout
Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition
2000
Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiscibility
1993 StandoutNobel
Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures
1999 StandoutNobel
Works of M. Giehler being referenced
A compact, continuous-wave terahertz source based on a quantum-cascade laser and a miniature cryocooler
2010
Properties of InN layers grown on 6H–SiC(0001) by plasma-assisted molecular beam epitaxy
2004
Influence of heteroepitaxy on the width and frequency of the E2 (high)-phonon line in GaN studied by Raman spectroscopy
2001
Lasing properties of GaAs/(Al,Ga)As quantum-cascade lasers as a function of injector doping density
2003
Optical phonons in isotopic Ge studied by Raman scattering
1998
Effect of Damping on the Plasmon‐Phonon Coupling in CdS and Gap
1976
Non‐isodisplacement of P atoms in long‐wavelength optical phonons in In1–xGaxP
1979
Characterization of in vitro corroded surfaces of bioactive glasses (P2O5CaOSiO2) with infrared reflection spectroscopy
1984
Optical phonons of hexagonal and cubic GaN studied by infrared transmission and Raman spectroscopy
1995
Effect of free-carrier absorption on the threshold current density of GaAs∕(Al,Ga)As quantum-cascade lasers
2004