Standout Papers

Recovery of Structural Defects in GaN After Heavy Ion Implantation 1997 2026 2006 2016 19
  1. Recovery of Structural Defects in GaN After Heavy Ion Implantation (1997)
    M. Deicher, M. D. Bremser et al. MRS Proceedings

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Works of M. Deicher being referenced

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First Microscopic Observation of Cadmium-Hydrogen Pairs in GaN
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Probing of lattice defects by radioactive atoms
1983
Microscopic characterisation of heavy-ion implanted diamond
1993
Defects in In simultaneously observed by channeling and PAC
1982
PAC studies on the formation and stability of acceptor-defect complexes in semiconductors
1992
Detection of vacancy clustering by combined PAC and lattice location measurements
1983
Intrinsic limitations of doping diamonds by heavy-ion implantation
1979
Migration of Helium Atoms in Copper at 25 K
1985
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1986
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Implantation Doping and Hydrogen Passivation of GaN
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1987
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1991
Defect Annealing in Copper around Stage III
1978
Realization of simultaneous channeling and nuclear-hyperfine-interaction experiments
1981
Geometrical significance of the orientation of defect-induced electric field gradients
1983
Nucleation of He clusters at111In in metals
1983
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2005
A new method to study the diffusion of impurities and defects by PAC
1981
Copper in silicon
1990
Implantation sites of In, Cd, and Hf ions in diamond
2001
Indium-defect complexes in silicon studied by perturbed angular correlation spectroscopy
1989
Combined PAC and electron-channeling studies of He-defect interaction in CU between 300 and 900 K
1987
The solid state physics programme at ISOLDE: recent developments and perspectives
2017
Vacancy trapping in Cu-0.1 at.% In
1984
TDPAC-study of amorphous NiP alloy produced by ion implantation
1982
Diffusion of implanted He in metals observed by PAC
1983
Impurity cluster interaction in FCC metals studied by PAC
1981
Defect types in noble metals migrating in stage III after irradiation and quenching
1981
Detection of electronic perturbations in silicon after EC decay of 111In observed by PAC
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Rankless by CCL
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