Standout Papers
Citation Impact
Citing Papers
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas
2016 StandoutNobel
Optical in situ surface control during MOVPE and MBE growth
1993
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Recovering three-dimensional shape around a corner using ultrafast time-of-flight imaging
2012 StandoutNobel
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Image transmission through an opaque material
2010 Standout
Doppler-free optical multiplex spectroscopy with stochastic excitation
1988 StandoutNobel
Band Gaps, Effective Masses, and Band Offsets in Lattice Matched Heterojunctions
1991
High quality quantum wells of InGaP/GaAs grown by molecular beam epitaxy
1989
Optical characterisation of semiconductor surfaces and interfaces
1995
Ordered GaInP by atomic layer epitaxy
1991
Optoelectronic devices based on III-V compound semiconductors which have made a major scientific and technological impact in the past 20 years
2000
Current analysis of polyimide passivated InGaP/GaAs HBT
1996
Relativistic generation of isolated attosecond pulses: a different route to extreme intensity
2005 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
2007 Standout
Nano-optics of surface plasmon polaritons
2005 Standout
A reflectance anisotropy spectrometer for real-time measurements
1992
Metal hydride materials for solid hydrogen storage: A review☆
2007 Standout
A reflectance anisotropy spectroscopy study of GaSb(100)c(2 × 6) surfaces prepared by Sb decapping
1996 StandoutNobel
Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding
2006 StandoutNobel
Band offset of GaAs-GaInP heterojunctions
1993
High-resolution Z-contrast imaging of crystals
1991 Standout
Determination of the Band Offset of GalnP- GaAs and AllnP- GaAs Quantum Wells by Optical Spectroscopy
1997
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
Optical investigations of GaAs-GaInP quantum wells and superlattices grown by metalorganic chemical vapor deposition
1991
Optical characterization of wide bandgap semiconductors
2000 StandoutNobel
Internal photoemission and energy-band offsets in GaAs-GaInP p-I-N heterojunction photodiodes
1991
Evolution and propagation of grating envelopes during erasure in bulk photorefractive media
1995
Phosphors in phosphor-converted white light-emitting diodes: Recent advances in materials, techniques and properties
2010 Standout
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Probing the AlxGa1−xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale
2002 StandoutNobel
Optical anisotropy in InAs/AlSb superlattices
1994 StandoutNobel
Conduction-band discontinuity in InGaP/GaAs measured using both current-voltage and photoemission methods
1992
ESR with stochastic excitation
1989
Hydrogen storage in Ti-based quasicrystal powders produced by mechanical alloying
2005
Nonlinear self-filtering of noisy images via dynamical stochastic resonance
2010
Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integration
1990
Optimized tight-binding valence bands and heterojunction offsets in strained III-V semiconductors
1991
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
2004 StandoutNobel
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
Reflectance anisotropy spectroscopy of oriented films of semiconducting polymers
2000 StandoutNobel
Minimal-data approaches for determining outer-layer dielectric responses of films from kinetic reflectometric and ellipsometric measurements
1993
Band offset of GaAs/In0.48Ga0.52P measured under hydrostatic pressure
1991
Band parameters for nitrogen-containing semiconductors
2003 Standout
Conduction-band offset in a pseudomorphic GaAs/In0.2Ga0.8As quantum well determined by capacitance–voltage profiling and deep-level transient spectroscopy techniques
1998
Measurement of the spatial phase shift in high-gain photorefractive materials
1997 StandoutNobel
Works of M. Defour being referenced
I n s i t u investigation of InAs metalorganic chemical vapor deposition growth using reflectance anisotropy
1990
I n s i t u investigation of the low-pressure metalorganic chemical vapor deposition of lattice-mismatched semiconductors using reflectance anisotropy measurements
1990
Low-noise photorefractive amplification and detection of very weak signal beams
1995
A high quantum efficiency GaInAs-InP photodetector-on-silicon substrate
1989
Extremely high electron mobility in a GaAs-GaxIn1−xP heterostructure grown by metalorganic chemical vapor deposition
1989
Enhancement of the signal-to-background ratio in photorefractive two-wave mixing by mutually incoherent two-beam coupling
1994
First GaInAsP-InP double-heterostructure laser emitting at 1.27 μm on a silicon substrate
1988
High-quality GaAs/Ga0.49In0.51P superlattices grown on GaAs and silicon substrates by low-pressure metalorganic chemical vapor deposition
1988
First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate
1988
Reflectance anisotropy investigation of the metalorganic chemical-vapor deposition of III-V heterojunctions
1991
High-purity GaAs layers grown by low-pressure metalorganic chemical vapor deposition
1989
Conduction- and valence-band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor deposition
1990
Very high purity InP epilayer grown by metalorganic chemical vapor deposition
1988
High performance GaAs/GaInP heterostructure bipolar transistors grown by low-pressure metal-organic chemical vapour deposition
1990
Broadband excitation and inhomogeneous broadening in photon-echo experiment
1986