Citation Impact
Citing Papers
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Probability of twin formation on self-catalyzed GaAs nanowires on Si substrate
2012 StandoutNobel
Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System
1985 StandoutNobel
Carbon‐Based Metal‐Free Catalysts for Electrocatalysis beyond the ORR
2016
Measurement of compositional inhomogeneity of liquid phase epitaxial InGaPAs
1983
Six cases of reliability study of Pb-free solder joints in electronic packaging technology
2002 Standout
Interface studies of AlxGa1−xAs-GaAs heterojunctions
1979
Electromigration drift and threshold in Cu thin-film interconnects
1996
Fundamentals of Energy Transfer During Picosecond Irradiation of Silicon
1981 StandoutNobel
Semiconductor materials for microwave devices
1973
Damascene copper electroplating for chip interconnections
1998 Standout
Luminescence properties of defects in GaN
2005 Standout
Fabrication of chirped gratings on GaAs optical waveguides
1980 StandoutNobel
Computer simulations of liquid phase epitaxy of III-V ternary alloys
1976
Simulations and theory of electromigration-induced slit formation in unpassivated single-crystal metal lines
1999
Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniques
1974
Phase-Field Models for Microstructure Evolution
2002 Standout
Atomic Layer Deposition of Ruthenium Thin Films for Copper Glue Layer
2004
Usefulness of surfactants in reducing particle adhesion and their effectiveness in cleaning silicon wafers
1998
Deep levels in InxGa1-xAsyP1-ygrown on (100) GaAs by LPE
1989 StandoutNobel
Adsorption and Desorption of Cetyl Pyridinium Ions at a Tungsten-Coated Silicon Wafer Surface
1998
Atomic Layer Deposition: An Overview
2009 Standout
Fabrication of ε-Fe2N Catalytic Sites in Porous Carbons Derived from an Iron–Triazolate Crystal
2018 StandoutNobel
Influence of cooling rate and melt configuration on rake lines in the active layer of AlxGa1-xAs DH lasers
1982
Electromigration threshold in copper interconnects
2001
Congruent vaporization of GaAs(s) and stability of Ga(l) droplets at the GaAs(s) surface
1995
Laser-induced periodic surface structure. I. Theory
1983 Standout
Atomically flat LPE-grown facets seen by scanning tunneling microscopy
1982 StandoutNobel
Heterostructure devices: A device physicist looks at interfaces
1983 StandoutNobel
LPE of buried heterostructure laser devices
1986
Chemical-Mechanical Planarization of the Polymer Interlayer Dielectrics
1998
Electroepitaxy of multicomponent systems: ternary and quarternary compounds
1980
Interconnect fabrication processes and the development of low-cost wiring for CMOS products
1995
Defect structures in rapidly degraded InGaAsP/InGaP double-heterostructure lasers
1985
Semiconducting and other major properties of gallium arsenide
1982 Standout
Protein and polymer analyses up to m/z 100 000 by laser ionization time‐of‐flight mass spectrometry
1988 StandoutNobel
Non-radiative transitions in semiconductors
1981
Measurement of isotype heterojunction barriers by C-V profiling
1980 StandoutNobel
Studies of the Ga1-xInxAs1-ySby quaternary alloy system I. liquid-phase epitaxial growth and assessment
1986
The evolution of interconnection technology at IBM
1995
Time-of-flight secondary ion mass spectrometry: detection of fragments from thick polymer films in the range m/z .ltoreq. 4500
1988
Force measurements with the atomic force microscope: Technique, interpretation and applications
2005 Standout
Two-dimensional electron gas on etched GaAs sidewalls by liquid phase epitaxial regrowth
1989 StandoutNobel
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Recombination enhanced defect reactions
1978
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Reliability and Copper Interconnections with Low Dielectric Constant Materials
1998
Growth of InGaP epitaxial layers by liquid phase electro-epitaxy
1991 StandoutNobel
Calculation of III-III-V-V quaternary layer thickness grown by liquid phase epitaxy - application to InGaAsP
1982
Studies of LPE ripple based on morphological stability theory
1978
Electromigration reliability issues in dual-damascene Cu interconnections
2002
Effect of Lattice Mismatch on Electric Properties near Heterointerface of InxGa1-xAsyP1-y(y<0.01)/(100) GaAs
1988 StandoutNobel
3-D ICs: a novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration
2001 Standout
Charge and Photoionization Properties of Single Semiconductor Nanocrystals
2001 StandoutNobel
Low dielectric constant polymers for microelectronics
2001 Standout
Molecular beam epitaxy
1975 Standout
LPE growth rate in AlxGa1−xAs system; theoretical and experimental analysis
1983
Liquid-phase electroepitaxy: Growth kinetics
1978
Experimental tests for boson condensation and superconductivity in semiconductors during pulsed beam annealing
1981
Effect of lattice mismatch between epitaxial layer and substrate on immiscibility of InGaAsP/GaAs LPE layers
1988 StandoutNobel
A review of surfactants as corrosion inhibitors and associated modeling
2017 Standout
Growth kinetics in LPE of the Ga-In-P-As system
1984
Self-mixing interference inside a single-mode diode laser for optical sensing applications
1994 StandoutNobel
Inlaid Copper Multilevel Interconnections Using Planarization by Chemical-Mechanical Polishing
1993
The Changing Automotive Environment: High-Temperature Electronics
2004 Standout
A new technique for multilayer LPE
1977
Plasma annealing state of semiconductors; plasma condensation to a superconductivity- like state at 1000 K?
1981
Thin-layer liquid phase epitaxy of InGaPAs heterostructures in short intervals (< 100 ms): Non-diffusion-limited crystal growth
1981
The effects of impurities and cooling rates on the surface morphology of LPE grown InP
1982
Copper interconnections and reliability
1998
In situ scanning electron microscope comparison studies on electromigration of Cu and Cu(Sn) alloys for advanced chip interconnects
1995
Silicides and ohmic contacts
1998
Random telegraph noise in photoluminescence from individual self-assembled quantum dots
1999
Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
2004
LPE Growth and Surface Morphology of InxGa1-xAsyP1-y (y≤0.01) on (100) GaAs
1984 StandoutNobel
Recent advances on electromigration in very-large-scale-integration of interconnects
2003 Standout
High Performance Silicon Nanowire Field Effect Transistors
2003 Standout
Effect of fiber-far-end reflections on intensity and phase noise in InGaAsP semiconductor lasers
1984
Works of M. B. Small being referenced
The distribution of solvent in an unstirred melt under the conditions of crystal growth by liquid epitaxy and its effect on the rate of growth
1969
Charging effects in the secondary ion mass spectrometric analysis of targets containing low-conductivity regions
1980
Meniscus lines as nucleation sites for the active layer of a double-heterostructure laser grown by LPE
1977
Growth and dissolution kinetics of III-V heterostructures formed by LPE
1979
Electromigration in two-level interconnect structures with Al alloy lines and W studs
1992
Reactive Ion Etching of AI(Cu) Alloys
1986
Threshold for Optically Induced Dislocation Glide in GaAs-AlGaAs Double Heterostructures: Degradation via a New Cooperative Phenomenon?
1978
A phenomenological study of meniscus lines on the surfaces of GaAs layers grown by LPE
1975
An explanation for the phenomenon of meniscus lines on the surfaces of (GaAl) as alloys grown by LPE
1977
Reversal in the growth or dissolution of III-V heterostructures by liquid phase epitaxy
1984
Wave morphologies on the surfaces of GaAs and Ga0.65Al0.35As grown LPE
1977
The application of numerical methods to simulate the liquid phase epitaxial growth of Ga1 −xAlxAs from an unstirred solution
1972
Al diffusivity as a function of growth rate during the formation of (GaAl)As heterojunctions by liquid phase epitaxy
1981
Electromigration in Al(Cu) two-level structures: Effect of Cu and kinetics of damage formation
1993
Electromigration in Cu/W Structure
1992
Eiectromigration in Cu/W Structure
1992
Chemical‐Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects
1991
On-chip wiring for VLSI: Status and directions
1990
Computer simulations of liquid phase epitaxy of GaAs in Ga solution
1971
Electromigration failure due to interfacial diffusion in fine Al alloy lines
1993
Some observations of the surface morphologies of GaAs layers grown by liquid phase epitaxy
1973
Noise properties of semiconductor lasers due to optical feedback
1984
Contact angles between (GaAl)As solid and solutions
1983
A determination of the undercooling necessary to initiate the epitaxial growth of GaAs from solution in Ga
1972