Citation Impact
Citing Papers
Unified Synthesis of Polycyclic Alkaloids by Complementary Carbonyl Activation**
2021 StandoutNobel
Cross-sectional TEM study of microstructures in MOVPE GaN films grown on α-Al2O3 with a buffer layer of AlN
1991 StandoutNobel
Fine Structure of the 3.42 eV Emission Band in GaN
1995
Desulfurization of N,N-dimethylthioformamide by hydrosilane with the help of an iron complex. Isolation and characterization of an iron–carbene complex as an intermediate of CS double bond cleavage
2011
Local Polar Fluctuations in Lead Halide Perovskite Crystals
2017 StandoutNobel
In situ monitoring and Hall measurements of GaN grown with GaN buffer layers
1992 StandoutNobel
Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers
1994 StandoutNobel
Study of cracking mechanism in GaN/α-Al2O3 structure
1985
Iron Catalysis in Organic Synthesis
2015 Standout
InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
1998 StandoutNobel
High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodes
1994 StandoutNobel
Properties of VPE-grown GaN doped with Al and some iron-group metals
1979
Noncovalent Functionalization of Graphene and Graphene Oxide for Energy Materials, Biosensing, Catalytic, and Biomedical Applications
2016 Standout
Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN
2001 StandoutNobel
Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates
2009 StandoutNobel
Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN
2010 StandoutNobel
Improvement of far-field pattern in nitride laser diodes
1999 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE
1991 StandoutNobel
Blue and aquamarine stress-relaxed semipolar (112¯2) laser diodes
2013 StandoutNobel
NK
1997 StandoutNobel
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
1986 StandoutNobel
Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2) semipolar heteroepitaxy
2011 StandoutNobel
Cathodoluminescence studies of the deep level emission bands of AlxGa1−xN films deposited on 6H–SiC(0001)
1998 StandoutNobel
Mechanism of Yellow Luminescence in GaN
1980
Synthesis of nitrogen-doped graphene–ZnS quantum dots composites with highly efficient visible light photodegradation
2014
444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer
2012 StandoutNobel
Preparation of AlxGa1-xN/GaN heterostructure by MOVPE
1990 StandoutNobel
Metastable DenseSemiconductor Phases
1997 StandoutScienceNobel
Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
1994 StandoutNobel
Optical properties of wurtzite GaN epilayers grown onA
1998 StandoutNobel
Mg x Zn 1−x O as a II–VI widegap semiconductor alloy
1998
Properties of the yellow luminescence in undoped GaN epitaxial layers
1995 StandoutNobel
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate
2011 StandoutNobel
Nonpolar and Semipolar Group III Nitride-Based Materials
2009
Central peaks and Brillouin scattering in uniaxial relaxor single crystals ofSr 0.61 Ba 0.39 Nb 2 O 6
2002
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Misfit dislocation formation at heterointerfaces in (Al,In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates
2011 StandoutNobel
The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
1998 StandoutScienceNobel
Exciton fine structure in undoped GaN epitaxial films
1996 StandoutNobel
Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN-coated sapphire substrates
1983
X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms
1999 StandoutNobel
Deposition of highly resistive, undoped, and p-type, magnesium-doped gallium nitride films by modified gas source molecular beam epitaxy
1993 StandoutNobel
Recent Advances in the Liquid-Phase Syntheses of Inorganic Nanoparticles
2004 Standout
Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy
1993
Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC
1998 StandoutNobel
Point-defect energies in the nitrides of aluminum, gallium, and indium
1992
A Benzene-Thermal Synthetic Route to Nanocrystalline GaN
1996 Science
Growth anisotropy in the GaN/Al2O3 system
1977
The influence of oxygen on the electrical and optical properties of GaN crystals grown by metalorganic vapor phase epitaxy
1992
Progress in the growth of nonpolar gallium nitride
2007 StandoutNobel
History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination
2013 StandoutNobel
Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates
1993
p-type conduction in Mg-doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy
1994 StandoutNobel
Strain-related phenomena in GaN thin films
1996 StandoutNobel
High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design
2014 StandoutNobel
Thermodynamic and kinetic processes involved in the growth of epitaxial GaN thin films
1993
Optical waveguide simulations for the optimization of InGaN-based green laser diodes
2010 StandoutNobel
On the Theory of Electroabsorption in Disordered Semiconductors
1972
Amide activation by TMSCl: reduction of amides to amines by LiAlH4 under mild conditions
2013
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy
2003 StandoutNobel
Blue InGaN-based laser diodes with an emission wavelength of 450 nm
2000 StandoutNobel
Influence of Mg-doped barriers on semipolar (202¯1) multiple-quantum-well green light-emitting diodes
2011 StandoutNobel
Effect of growth parameters on the properties of GaN : Zn epilayers
1977
Polarized electroabsorption spectroscopy of highly ordered poly(2-methoxy,5-(2’-ethyl-hexoxy)-p-phenylene vinylene)
1995 StandoutNobel
InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
1998 StandoutNobel
Defeating Compensation in Wide Gap Semiconductors by Growing in H that is Removed by Low Temperature De-Ionizing Radiation
1992
Comparative analysis of 202¯1 and 202¯1¯ semipolar GaN light emitting diodes using atom probe tomography
2013 StandoutNobel
m -plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers
2009 StandoutNobel
Polarized electroabsorption spectra of amorphous semiconductors
1988
Substrate-orientation dependence of GaN single-crystal films grown by metalorganic vapor-phase epitaxy
1987
Works of M. Aoki being referenced
Highly efficient synthesis of aldenamines from carboxamides by iridium-catalyzed silane-reduction/dehydration under mild conditions
2009
Electrooptic Light Beam Deflection with Sr0.75Ba0.25Nb2O6 Prism
1972
Epitaxial Growth of Undoped and Mg-Doped GaN
1976
Photoluminescenece in P-Doped GaN
1979
Shapes of Pair Spectra Involving the Ge-Acceptor in GaP
1975
Optical Absorption in Amorphous Selenium in High Electric Fields
1966
Resonant Raman Scattering in ZnS
1991
Effects of Built-In Strain on Luminescence and Absorption Spectra of GaN Epitaxial Crystals
1974