Citation Impact
Citing Papers
Intrinsic carrier concentration and effective masses in InAs1−xSbx
1989
Attosecond Pulse Trains Generated Using Two Color Laser Fields
2006 StandoutNobel
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Attosecond real-time observation of electron tunnelling in atoms
2007 StandoutNatureNobel
Attosecond Electron Bunches
2004 StandoutNobel
Optical microcavities
2003 StandoutNature
Generation of Coherent Soft-X-Ray Radiation Extending Far Beyond the TitaniumL
2004 StandoutNobel
Attosecond Streak Camera
2002 StandoutNobel
Attosecond metrology
2001 StandoutNatureNobel
Attosecond control of electronic processes by intense light fields
2003 StandoutNatureNobel
Attosecond nonlinear polarization and light–matter energy transfer in solids
2016 StandoutNatureNobel
Observation of Light-Phase-Sensitive Photoemission from a Metal
2004 StandoutNobel
Nonsequential Double Ionization at the Single-Optical-Cycle Limit
2004 StandoutNobel
Field-resolved infrared spectroscopy of biological systems
2020 StandoutNatureNobel
Quantum Theory of Attosecond XUV Pulse Measurement by Laser Dressed Photoionization
2002 StandoutNobel
Precision measurement of the isotope shift of the 1S-2Stransition of atomic hydrogen and deuterium
1993 StandoutNobel
Infrared Dispersion of Second-Order Electric Susceptibilities in Semiconducting Compounds
1972
The structure and properties of metal-semiconductor interfaces
1982
Derivative transmission measurements of the temperature dependance of the Γ-Γ transition in the Ga0.73In0.27As0.59P0.41 compound
1981
Infrared free carrier response of In0.15Ga0.85As0.17Sb0.83 epilayers on GaSb
1998
Croissance par épitaxie en phase liquide et caractérisation d'alliages Ga1-xIoxAsySb1-y à paramètre de maille accordé sur celui de GaSb
1987
Interband optical properties of molecular-beam epitaxially grown GaAs1−xSbx on GaAs substrates
1999
Room-temperature excitons in 1.6-μm band-gap GaInAs/AlInAs quantum wells
1985
Applications of scaling to problems in high-field electronic transport
1981
An experimental determination of the effective masses for GaxIn1−xAsyP1−y alloys grown on InP
1979
Absorption and electroabsorption spectra of an In1−xGaxP1−yAsy/InP double heterostructure
1988
Schottky barrier Ga1−xAlxAs1−ySby alloy avalanche photodetectors
1980
Cyclotron resonance in n-type In1−xGaxAsyP1−y
1979 StandoutNobel
Quantum Confinement in Size-Selected, Surface-Oxidized Silicon Nanocrystals
1993 StandoutScienceNobel
Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44<x<0.49) grown by liquid phase epitaxy, vapor phase epitaxy, and metal organic chemical vapor deposition
1983
In0.53Ga0.47As/InP heterojunctions with low interface defect densities
1991
The electronic structure of alloys and related heterojunctions
1997
Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphide
1980
Photodissociation of 1,2-chloroiodoethane at 248 and 266 nm: The enthalpy of formation of CH2ClCH2I
1984 StandoutNobel
Interband magnetoabsorption of In_{0.53}Ga_{0.47}As
1980
Solar Water Splitting Cells
2010 Standout
Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2–4-μm optoelectronic device applications
1987
Molecular beam epitaxial growth and low-temperature optical characterization of GaAs0.5Sb0.5 on InP
1987
The lasers behind the communications revolution
2002
Composition dependence of the spin-orbit splittings in lattice-matched quaternary alloys: Generalized Van Vechten-Berolo-Woolley model
1983
Optics at critical intensity: Applications to nanomorphing
2004 StandoutNobel
Optical properties of high-quality InGaAs/InAlAs multiple quantum wells
1991 StandoutNobel
Fractional Quantization of the Hall Effect
1983 StandoutNobel
Stabilized Lasers and Precision Measurements
1978 StandoutScienceNobel
Observation of saturation peaks in a He-Ne laser by tuned laser differential spectrometry
1968 StandoutNobel
Attosecond physics
2009 StandoutNobel
Dimensions of luminescent oxidized and porous silicon structures
1994 StandoutNobel
Material parameters of In1−xGaxAsyP1−y and related binaries
1982
Observation of the "Dark Exciton" in CdSe Quantum Dots
1995 StandoutNobel
Attosecond Synchronization of High-Harmonic Soft X-rays
2003 StandoutScienceNobel
Composition dependence of band gap and type of lineup in In1−x−yGaxAlyAs/InP heterostructures
1993
High-Resolution Saturation Spectroscopy of the SodiumD
1971 StandoutNobel
Photoluminescence of Mn- and Un-doped Ga0.47In0.53As on InP
1984
Band Structure of Ga1−xInxAs
1976
Two-Dimensional Magnetotransport in the Extreme Quantum Limit
1982 StandoutNobel
Frequency stabilization of gas lasers
1967
High-Power THz Generation, THz Nonlinear Optics, and THz Nonlinear Spectroscopy
2008
Type II heterojunctions in the GaInAsSb/GaSb system
1994
Cyclotron resonance and the magnetophonon effect in GaxIn1−xAsyP1−y
1980
Liquid-phase epitaxial growth of GaInAsSb with application to GaInAsSb/GaSb heterostructure diodes
1992
Electron mobility and energy gap of In0.53Ga0.47As on InP substrate
1976
Synthesized Light Transients
2011 StandoutScienceNobel
Semiconducting and other major properties of gallium arsenide
1982 Standout
Lifetimes of Bound Excitons in CdS
1970
High valence-band offset of GaSbAs-InAlAs quantum wells grown by molecular beam epitaxy
1992
Investigation of optical properties of interfaces between heavily doped Al0.48In0.52As:Si and InP (Fe) substrates by photoreflectance analysis
1999
Measurement of InP/In0.53Ga0.47As and In0.53Ga0.47As/In0.52Al0.48As heterojunction band offsets by x-ray photoemission spectroscopy
1991
Temperature dependence of the interband critical-point parameters of InP
1987
Study of InxGa1−xAs/InAsyP1−y structures lattice mismatched to InP substrates
1996
Picosecond laser pulses
1969
Measurement of Methane Hyperfine Structure Using Laser Saturated Absorption
1973 StandoutNobel
Determination of the valence-band discontinuity of InP1−xGaxP1−zAsz (x∼0.13, z∼0.29) by quantum-well luminescence
1979
Electrical determination of band offsets in a p-Ga0.77In0.23As0.20Sb0.80/ n-GaSb type-II heterojunction
1993
Compositional dependence of band-gap energy and conduction-band effective mass of In1−x−yGaxAlyAs lattice matched to InP
1982
Optically pumped 1.55-μm double heterostructure GaxAlyIn1−x−yAs/AluIn1−uAs lasers grown by molecular beam epitaxy
1983
Band gaps and spin-orbit splitting of ordered and disorderedAl x Ga 1 − x As Ga As x Sb 1 − x
1989
Attosecond Control and Measurement: Lightwave Electronics
2007 StandoutScienceNobel
Photonic Crystal Fibers
2003 StandoutScience
Anisotropic Interference of Three-Wave and Double Two-Wave Frequency Mixing in GaAs
1972 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Band-gap and spin-orbit splitting of the lattice-matched GaAsSb/InAs system
1987
Application of nonlinear devices to optical frequency measurement
1976
Controlling the Phase Evolution of Few-Cycle Light Pulses
2000 StandoutNobel
Stability of bulk and pseudomorphic epitaxial semiconductors and their alloys
1988
Fractional Quantization of the Hall Effect: A Hierarchy of Incompressible Quantum Fluid States
1983 StandoutNobel
Electro-optic sideband generation at 72 GHz
1989
Electronic properties of random alloys: Special quasirandom structures
1990 Standout
Growth and characterization of InGaAsP lattice-matched to InP
1981
Nobel Lecture: Passion for precision
2006 Nobel
The electron effective mass in In1−xGaxAsyP1−y
1980
Strong-Field Saturation Effects in Laser Media
1967
Optical properties of molecular beam epitaxially grown GaAs1−xSbx (0<x<0.5) on GaAs and InP substrates
1988
Optical Properties of High-Quality Ga1-xInxAs1-ySby/InAs Grown by Liquid-Phase Epitaxy
1994
Measurement of the Γ-L separation in Ga0.47In0.53As by ultraviolet photoemission
1982
Pseudopotential band structure ofAl 1 − x − y Ga x In y As
1982
On pressure broadening in a He-Ne laser
1969 StandoutNobel
Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
1983 Standout
The physics and technology of gallium antimonide: An emerging optoelectronic material
1997
X-ray Pulses Approaching the Attosecond Frontier
2001 StandoutScienceNobel
Photodissociation of alkyl iodides
1975
Band gaps and band offsets in strained GaAs1−ySby on InP grown by metalorganic chemical vapor deposition
1999
Novel approach to the calculation of instability regions in GaInAsSb alloys
2000
Optical constants of Ga1−xInxAsySb1−y lattice matched to GaSb (001): Experiment and modeling
2000
OMVPE growth of metastable GaAsSb and GaInAsSb alloys using TBAs and TBDMSb
1997
Electroreflectance study of InGaAsP quaternary alloys lattice matched to InP
1981
cw Self-Focusing and Self-Trapping of Light in Sodium Vapor
1974 StandoutNobel
Electronic structure and optical properties of the quaternary alloy Ga1 − xAlxAsySb1 − y
1996
GaInAsSb metastable alloys grown by organometallic vapor phase epitaxy
1986
Identification of Absorption Lines by Modulated Lower-Level Population: Spectrum ofNa 2
1976 StandoutNobel
Frequency Ratio of Al+and Hg+Single-Ion Optical Clocks; Metrology at the 17th Decimal Place
2008 StandoutScienceNobel
Photoluminescence of undoped In0.53Ga0.47As/InP grown by the vapor phase epitaxy technique
1982
Pressure Shift and Broadening of Methane Line at 3.39μ
1969 StandoutNobel
Direct-energy-gap dependence on Al concentration inAl x Ga 1 − x
1988
Electro-optic detection of terahertz radiation
1999
Electronic properties of junctions between silicon and organic conducting polymers
1990 StandoutNatureNobel
Short-Pulse Laser Damage in Transparent Materials as a Function of Pulse Duration
1999 StandoutNobel
Photoluminescence of AlxGa1−xAs alloys
1994
Intense few-cycle laser fields: Frontiers of nonlinear optics
2000 StandoutNobel
Steering Attosecond Electron Wave Packets with Light
2002 StandoutScienceNobel
1977
Calculation of energy band gaps in quaternary iii/v alloys
1981
Energy Band Structure of In1‐xGaxAsyP1‐y Lattice Matched to InP by Means of the Line Profile Analysis of the Electroreflectance Spectra
1985
Saturation Behavior of a Doppler-Broadened Transition Involving Levels with Closely Spaced Structure
1966
Modulation-doped Ga0.47In0.53As/Al0.48In0.52As planar photoconductive detectors for 1.0–1.55-μm applications
1983
Absolute frequency measurement of the hydrogen 1S-2Stransition and a new value of the Rydberg constant
1992 StandoutNobel
Works of M. A. Pollack being referenced
Band Structure and Optical Properties of In1-xGaxAsyP1-y
1980
An In0.53Ga0.47As junction field-effect transistor
1980
Microwave Nonlinear Susceptibilities Due to Electronic and Ionic Anharmonicities in Acentric Crystals
1971
LOCKING OF He–Ne LASER MODES INDUCED BY SYNCHRONOUS INTRACAVITY MODULATION
1964
In 0.53 Ga 0.47 As p-i-n photodiodes for long-wavelength fibre-optic systems
1979
A 964-GHz TRAVELING-WAVE ELECTRO-OPTIC LIGHT MODULATOR
1970
Continuous operation of 1.0-μm-wavelength GaAs1−xSbx/AlyGa1−yAs1−xSbx double-heterostructure injection lasers at room temperature
1976
cw operation of GaInAsSb/AlGaAsSb lasers up to 190 K
1986
Mode Competition and Collision Effects in Gaseous Optical Masers
1965
Threshold characteristics and extended wavelength operation of GaAs1−x′Sbx′/ AlyGa1−yAs1−xSbx double-heterostructure lasers
1977
Integrated In 0.53 Ga 0.47 As p-i-n f.e.t. photoreceiver
1980
Growth and properties of liquid-phase epitaxial GaAs1−xSbx
1977
Optical properties ofIn 1 − x Ga x As y P 1 − y
1982
Electroreflectance investigation of In1−xGaxAsyP1−y lattice-matched to InP
1980
Compositional dependence of the electron mobility in Inl-x Gax Asy P1-y
1980
The Liquid Phase Epitaxy of Al y Ga1 − y As1 − x Sb x and the Importance of Strain Effects near the Miscibility Gap
1978
Highly uniform, high quantum efficiency GaInAsSb/AlGaAsSb double heterostructure lasers emitting at 2.2 μm
1989
Reduction of threshold current density of 2.2μm GaInAsSb/AlGaAsSb injection lasers
1986
Observation of Electronic Band-Structure Effects on Impact Ionization by Temperature Tuning
1977
Index-profile determination of heterostructure GaAs planar waveguides from mode-angle measurements at 106 μm wavelength
1975
Liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μm
1978
Liquid-phase-epitaxial InAsySb1−y on GaSb substrates using GaInAsSb buffer layers: Growth, characterization, and application to mid-IR photodiodes
1987
The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs
1978
Efficient LPE-grown Inx Ga1 −x As LEDs at 1–1.1-μm wavelengths
1974
Induced Atomic Cascade Processes
1964
ABSOLUTE FREQUENCY MEASUREMENT OF THE 118.6-μm WATER-VAPOR LASER TRANSITION
1967
Room-temperature GaInAsSb/AlGaAsSb DH injection lasers at 2.2 μm
1985
Hot-carrier relaxation in photoexcited In0.53Ga0.47As
1980
Temperature dependence of impact ionisation rates in GaAs between 20° and 200°C
1979
Raman scattering studies of surface space charge layers and Schottky barrier formation in InP
1979
Lattice vibrations of In1−xGaxAsyP1−y quaternary compounds
1978
2.2 μm GaInAsSb/AlGaAsSb injection lasers with low threshold current density
1987
Microwave Nonlinearities in Anisotropic Dielectrics and Their Relation to Optical and Electro-Optical Nonlinearities
1973
High performance GaInAsSb/GaSb p-n photodiodes for the 1.8–2.3 μm wavelength range
1986
PRESSURE DEPENDENCE OF THE IODINE PHOTODISSOCIATION LASER PEAK OUTPUT
1966
High-efficiency In1−xGaxAsyP1−y/InP photodetectors with selective wavelength response between 0.9 and 1.7 μm
1978
Fast photoconductive detector using p-In0.53Ga0.47As with response to 1.7 μm
1981
Liquid phase epitaxial Ga1-xInxAsySb1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength range
1985
Impact ionization rates for electrons and holes in GaAs1−xSbx alloys
1976
High-speed GaInAsSb/GaSb PIN photodetectors for wavelengths to 2.3 μm
1986
Growth and characterization of liquid−phase epitaxial InxGa1−xAs
1975
Threshold dependence on active-layer thickness in InGaAsP/InP d.h. lasers
1978
Band gap versus composition and demonstration of Vegard’s law for In1−xGaxAsyP1−y lattice matched to InP
1978
Low-threshold room-temperature double-heterostructure GaAs1−xSbx/AlyGa1−yAs1−xSbx injection lasers at 1-μm wavelengths
1975
Temperature dependence of photoluminescence of n-InGaAsP
1981