Citation Impact
Citing Papers
Cross-sectional TEM study of microstructures in MOVPE GaN films grown on α-Al2O3 with a buffer layer of AlN
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Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
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Alternative Plasmonic Materials: Beyond Gold and Silver
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Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Dependence of Resonance Energy Transfer on Exciton Dimensionality
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Transport properties ofn Al x Ga 1 − x As ( 0 ≤ x ≤ 0 . 6 )
1984
Growth and applications of Group III-nitrides
1998
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
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Control of strain in GaN using an In doping-induced hardening effect
2001 StandoutNobel
Derivative transmission measurements of the temperature dependance of the Γ-Γ transition in the Ga0.73In0.27As0.59P0.41 compound
1981
Mobility of two-dimensional electrons in AlGaN/GaN modulation-doped field-effect transistors
1998
Measurement of AlInAsSb/GaInAsSb heterojunction band offset by photoluminescence spectroscopy
1999
The Criteria for Beneficial Disorder in Thermoelectric Solid Solutions
2012
A Reproducible LPE Growth of High-Quality In1-xGaxP1-yAsy Layers on GaAs by the Control of Phosphorus Vapor on the Substrate
1982 StandoutNobel
Thermal stress in GaN epitaxial layers grown on sapphire substrates
1995
Quantum ground state and single-phonon control of a mechanical resonator
2010 StandoutNatureNobel
Scattering parameters from an analysis of the hall electron mobility in Ga1−Al As alloys
1982
Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphide
1980
Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2–4-μm optoelectronic device applications
1987
Gold Nanoparticles: Assembly, Supramolecular Chemistry, Quantum-Size-Related Properties, and Applications toward Biology, Catalysis, and Nanotechnology
2003 Standout
Spintronics: Fundamentals and applications
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InGaAsP quaternary alloys: Composition, refractive index and lattice mismatch
1980
Direct calculation ofk ⋅ p
2000
A comprehensive review of ZnO materials and devices
2005 Standout
Quantized states inGa 1 − x In x N / GaN
2000 StandoutNobel
Spatially Confined Chemistry: Fabrication of Ge Quantum Dot Arrays
1996
Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates
1998
Electroreflectance investigation of In1−xGaxAsyP1−y lattice-matched to InP
1980
Material parameters of In1−xGaxAsyP1−y and related binaries
1982
NK
1997 StandoutNobel
The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
1983 Standout
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
1986 StandoutNobel
Binding energy for the intrinsic excitons in wurtzite GaN
1996 StandoutNobel
Piezoelectricity of ordered (Ga0.5In0.5)N alloys
2001
Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectricGa 1 − x In x N / G a N
2000 StandoutNobel
Hot electron transport in AlN
2000 StandoutNobel
Metastable DenseSemiconductor Phases
1997 StandoutScienceNobel
High optical quality AlInGaN by metalorganic chemical vapor deposition
1999
Raman analysis of phonon lifetimes in AlN and GaN of wurtzite structure
1999 StandoutNobel
Alloy-scattering dependence of electron mobility in the ternary gallium, indium, and aluminum nitrides
1995
GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
1985 Standout
Optical properties of wurtzite GaN epilayers grown onA
1998 StandoutNobel
Selective chemical etching of polycrystalline SiGe alloys with respect to Si and SiO2
1992
Monte Carlo simulation of electron transport in wurtzite aluminum nitride
1998
Semiconducting and other major properties of gallium arsenide
1982 Standout
Electronic properties of CdSe nanocrystals in the absence and presence of a dielectric medium
1999 StandoutNobel
Resolving the Triexciton Recombination Pathway in CdSe/CdS Nanocrystals through State-Specific Correlation Measurements
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Organic Semiconductor Lasers
2007 Standout
Optical characterization of wide bandgap semiconductors
2000 StandoutNobel
Measurement of effective mass in In0.9Ga0.1As0.22P0.78 by Shubnikov–de Haas oscillations
1978
High conduction-band offset of AlInAsSb/InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy
1999
Tuning bands of PbSe for better thermoelectric efficiency
2013
Transient electron transport in wurtzite GaN, InN, and AlN
1999
OMVPE growth of the new semiconductor alloys GaP1−xSbx and InP1−xSbx
1988
Exciton fine structure in undoped GaN epitaxial films
1996 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V
1997
A band-structure model of strained quantum-well wurtzite semiconductors
1997
Tight-binding view of alloy scattering in III-V ternary semiconducting alloys
1984
Electron effective mass in InuGa1−uPvAs1−v for 0 ≤ v ≤ 1
1980
Recent Advances in the Liquid-Phase Syntheses of Inorganic Nanoparticles
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Electronic structure of pseudobinary semiconductor alloysAl x Ga 1 − x As Ga P x As 1 − x Ga x In 1 − x P
1981
GaN: Processing, defects, and devices
1999
Effect of Lattice Mismatch on Electric Properties near Heterointerface of InxGa1-xAsyP1-y(y<0.01)/(100) GaAs
1988 StandoutNobel
Biexciton Auger Recombination in CdSe/CdS Core/Shell Semiconductor Nanocrystals
2016
Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlattices
1997
Variation of GaN valence bands with biaxial stress and quantification of residual stress
1997 StandoutNobel
Ellipsometric and thermoreflectance spectra of (AlxGa1−x)0.5In0.5P alloys
1996
Emerging gallium nitride based devices
1995
Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN
2013 StandoutNobel
A Benzene-Thermal Synthetic Route to Nanocrystalline GaN
1996 Science
Multi-Component Synthesis of a Buta-1,3-diene-Linked Covalent Organic Framework
2022 StandoutNobel
Growth and characterization of InGaAsP lattice-matched to InP
1981
Calculation of the conduction band discontinuity for Ga0.47In0.53As/Al0.48In0.52As heterojunction
1984
Rationally Designing High-Performance Bulk Thermoelectric Materials
2016 Standout
Applicability of thek ⋅ p
1998
Increased Polarization Ratio on Semipolar (1122) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition
2008 StandoutNobel
Strain effects on excitonic transitions in GaN: Deformation potentials
1996 StandoutNobel
Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates
2012 StandoutNobel
Organic thin film materials producing novel blue laser
1998
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
1999 Standout
Luminescence from AI0.28Ga0.72AS0.62P0.38 layers grown on GaAs0.61P0.39 substrates by liquid-phase epitaxy
1992
Low field electron mobility in GaN
1999
Donor energy level for Se in Ga1−xAlxAs
1982
Energy bands of ternary alloy semiconductors: Coherent-potential-approximation calculations
1983
Strain-related phenomena in GaN thin films
1996 StandoutNobel
High field electron transport properties of bulk ZnO
1999
Excitonic transitions and exciton damping processes in InGaAs/InP
1986
Electron mobility inGa 1 − x Al x As
1981
Monte Carlo calculation of electron transport properties of bulk AlN
1998
Quantum Dot Bioconjugates for Ultrasensitive Nonisotopic Detection
1998 StandoutScience
Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
2001
Effects of hydrogen in an ambient on the crystal growth of GaN using Ga(CH3)3 and NH3
1984 StandoutNobel
Dichromatic color tuning with InGaN-based light-emitting diodes
2008 StandoutNobel
Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films
1998 StandoutNobel
Organometallic VPE Growth of InAs1-x-ySbxPy on InAs
1981
Electroreflectance study of InGaAsP quaternary alloys lattice matched to InP
1981
Effective masses of electrons and heavy holes in GaAs, InAs, A1As and their ternary compounds
1995
Interface-phonon-assisted transitions in quantum-well lasers
1996
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
Progress and prospects for GaN and the III–V nitride semiconductors
1993
Alloy broadening in photoluminescence spectra ofAl x Ga 1 − x As
1984
Liquid phase epitaxial Ga1-xInxAsySb1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength range
1985
Influence of complex phonon spectra on intersubband optical gain
1997
Band parameters for nitrogen-containing semiconductors
2003 Standout
Thermal Resistivity of Quaternary Solid Solution Ga xIn1–x – xAsyP1 – y Lattice‐matched to InP and GaAs
1982
Dense dislocation arrays embedded in grain boundaries for high-performance bulk thermoelectrics
2015 StandoutScience
Organometallic vapor phase epitaxial growth of a new semiconductor alloy: GaP1−xSbx
1988
Current and future applications of nanoclusters
1999
Effective masses and valence-band splittings in GaN and AlN
1997
Atomically Precise Clusters of Noble Metals: Emerging Link between Atoms and Nanoparticles
2017 Standout
Calculation of energy band gaps in quaternary iii/v alloys
1981
Valence-band structure of wurtzite GaN including the spin-orbit interaction
1999
Energy Band Structure of In1‐xGaxAsyP1‐y Lattice Matched to InP by Means of the Line Profile Analysis of the Electroreflectance Spectra
1985
Energy bandgap of AlxGa1−xAs1−ySby and conduction band discontinuity of AlxGa1−xAs1−ySby/InAs and AlxGa1−xAs1−ySby/InGaAs heterostructures
1998
Growth by Liquid-Phase Epitaxy and Characterization of Al0.28Ga0.72As0.62P0.38
1992
Works of M. A. Littlejohn being referenced
Theoretical study of electron transport in gallium nitride
1995
Alloy scattering and high field transport in ternary and quaternary III–V semiconductors
1978
Hole scattering and optical transitions in wide-band-gap nitrides: Wurtzite and zinc-blende structures
1997
Transient ballistic transport in GaN
1997
Energy bandgap and lattice constant contours of iii-v quaternary alloys of the form Ax By Cz D or ABx Cy Dz
1978
Ballistic transport in GaAs
1983
Negative resistance and peak velocity in the central (000) valley of III–V semiconductors
1979
Electron Hall mobility in GaxIn1−xAsyP1−y calculated with two-longitudinal-optical-phonon model
1981
Velocity-field characteristics of Ga1−xInxP1−yAsy quaternary alloys
1977
Monte Carlo simulation of real-space electron transfer in GaAs-AlGaAs heterostructures
1980
Selective Rapid Thermal Cvd of Germanium
1989
Strain effects on valence band structure in würtzite GaN quantum wells
1996
Velocity-field characteristics of GaAs with Γc6-L c6-X c6 conduction-band ordering
1977
Anisotropic hole scattering in hexagonal GaN
1997
Valence band spectra in pseudomorphically strained wurtzite quantum wells
1997
Transition from longitudinal-optical phonon scattering to surface-optical phonon scattering in polar semiconductor superlattices
1991
Envelope-function formalism for valence bands in wurtzite quantum wells
1996
Strain effects on optical gain in wurtzite GaN
1997
Doping characteristics and electrical properties of Be-doped p-type AlxGa1−xAs by liquid phase epitaxy
1980
The electron effective mass in In1−xGaxAsyP1−y
1980
Effects of two longitudinal optical-phonon modes on electron distribution in GaxIn1−xAsyP1−y
1982
Monte Carlo calculation of the velocity-field relationship for gallium nitride
1975
Velocity-field relationship of InAs-InP alloys including the effects of alloy scattering
1976
Growth of GaN Thin‐Films from Triethylgallium Monamine
1975
Electron concentration and alloy composition dependence of Hall factor in Ga x In 1− x As y P 1− y
1981
Energy bandgap and lattice constant contours of iii–v quaternary alloys
1978
Selective low-pressure chemical vapor deposition of Si1−xGex alloys in a rapid thermal processor using dichlorosilane and germane
1990