Standout Papers
Citation Impact
Citing Papers
Growth of InAs-AlSb quantum wells having both high mobilities and high concentrations
1993 StandoutNobel
Ferromagnetic Order Induced by Photogenerated Carriers in Magnetic III-V Semiconductor Heterostructures of (In,Mn)As/GaSb
1997
Electric-field control of ferromagnetism
2000 StandoutNature
A graphene-based broadband optical modulator
2011 StandoutNature
Detection of individual gas molecules adsorbed on graphene
2007 StandoutNobel
Density of States and Zero Landau Level Probed through Capacitance of Graphene
2010 StandoutNobel
Controlling dielectrics with the electric field of light
2012 StandoutNatureNobel
Electrical Detection of Spin Accumulation in ap
2003 StandoutNobel
Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection
2011 StandoutNature
Optical-field-induced current in dielectrics
2012 StandoutNatureNobel
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals
2017 StandoutNature
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
2000 StandoutScience
Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wells
1989 StandoutNobel
Interface composition dependence of the band offset in InAs/GaSb
1996
Ferromagnet/semiconductor hybrid structures grown by molecular-beam epitaxy
1999
Calculation of InAs/AlSb(001) band offsets: Effect of strain and interfacial atomic structure
1993
Optical properties of semiconductor superlattice
1975 Nobel
GaSb/AlSb multiquantum well structures: Molecular beam epitaxial growth and narrow-well photoluminescence
1983 StandoutNobel
Resonant tunneling in semiconductor double barriers
1974 Nobel
Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductorGa 1 − x Mn x As
1997
Polytype Superlattices and Multi-Heterojunctions
1981 Nobel
Raman scattering study of InAs/GaInSb strained layer superlattices
1991 StandoutNobel
Influence of Collective Effects on the Linewidth of Intersubband Resonance
1998 StandoutNobel
Band lineups and deformation potentials in the model-solid theory
1989 Standout
GaAs/AlAs layered films
1979
Breakdown of universal scaling of conductance fluctuations in high magnetic fields
1992 StandoutNobel
Observation of Superlattice Effects on the Electronic Bands of Multilayer Heterostructures
1981 Nobel
Properties of ferromagnetic III–V semiconductors
1999
Energy Structure and Quantized Hall Effect of Two-Dimensional Holes
1983 StandoutNobel
Electronic properties of the AlAs-GaAs (001) interface and superlattice
1979
The electronic structure of InAs/GaSb(001) superlattices-two dimensional effects
1979
Advances in molecular beam epitaxy (MBE)
1991
Electron-hole subbands at the GaSbInAs interface
1980
Nitride-based semiconductors for blue and green light-emitting devices
1997 Nature
Cyclotron Resonance and Far-Infrared Magneto-Absorption Experiments on Semimetallic InAs-GaSb Superlattices
1980 Nobel
On the effect of the barrier widths in the InAs/AlSb/GaSb single-barrier interband tunneling structures
1990
Quantum Hall effect in InAs/AlSb quantum wells
1991 StandoutNobel
Polarization field effects on the electron-hole recombination dynamics in In0.2Ga0.8N/In1−xGaxN multiple quantum wells
1997
Electronic properties of the GaAsAlGaAs interface with applications to multi-interface heterojunction superlattices
1980 StandoutNobel
Near-Field Spectroscopy of the Quantum Constituents of a Luminescent System
1994 StandoutScienceNobel
Nonequilibrium ac Josephson Effect in Mesoscopic Nb-InAs-Nb Junctions
1999 StandoutNobel
Optical properties of InAs/InP strained single quantum wells grown by organometallic vapor-phase epitaxy
1991
A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires
1998 StandoutScience
The justification for applying the effective-mass approximation to microstructures
1992
Ion backscattering and channeling study of InAs-GaSb superlattices
1980 Nobel
Complex band structure and superlattice electronic states
1981
Measurement of theIn 0.52 Al 0.48 In 0.52 Al 0.48
1995
Electronic Properties of Flat-Band Semiconductor Heterostructures
1981
Interband absorption in charged Ge/Si type-II quantum dots
2001
Preparation of (In,Mn)As/(Ga,Al)Sb magnetic semiconductor heterostructures and their ferromagnetic characteristics
1993
Rotational slip in III-V heterostructures grown by molecular-beam epitaxy
1988 StandoutNobel
New diluted magnetic semiconductors based on III–V compounds
1991
Dynamical Conductivity of the GaAs Two-Dimensional Electron Gas at Low Temperature and Carrier Density
1987
New Transport Phenomenon in a Semiconductor "Superlattice"
1974 Nobel
Two-Dimensional Magnetotransport in the Extreme Quantum Limit
1982 StandoutNobel
Making Nonmagnetic Semiconductors Ferromagnetic
1998 StandoutScience
Effect of one monolayer of surface gold atoms on the epitaxial growth of InAs nanowhiskers
1992
Magnetic field-induced semimetal-to-semiconductor transition in InAs-GaSb superlattices
1980 Nobel
Charge fluctuations in small-capacitance junctions
1990 StandoutNobel
Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire Structures
1980
The effect of interface bond type on the structural and optical properties of GaSb/InAs superlattices
1993
Acoustic deformation potentials and heterostructure band offsets in semiconductors
1987
Study of the electronic structure of model (110) surfaces and interfaces of semi-infinite III-V compound semiconductors: The GaSb-InAs system
1980
Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect
1984 Standout
Electrical and magneto-optical of MBE InAs on GaAs
1992
Band Structure of AlAs-GaAs(100) Superlattices
1977
Infrared optical characterization of InAs/Ga1−xInxSb superlattices
1990
Cyclotron resonance of high-mobility two-dimensional electrons at extremely low densities
1988 StandoutNobel
The Quantized Hall Effect
1983 StandoutScienceNobel
Electron effective mass and band-gap dependence on alloy composition of AlyGaxIn1−y−xAs, lattice matched to InP
1992
Semiconductor Superlattices-A New Material For Research and Applications
1981
Nonuniversal Conductance Quantization in Quantum Wires
1996 StandoutNobel
InAs-GaSb superlattice energy structure and its semiconductor-semimetal transition
1978 Nobel
Semiconductor superfine structures by computer-controlled molecular beam epitaxy
1976 Nobel
The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
1998 StandoutScienceNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Study of electron-phonon interaction and magneto-optical anomalies in two-dimensionally confined systems
1980
Dipole effects and band offsets at semiconductor interfaces
1988
Filling-factor-dependent cyclotron mass in space-charge layers on GaAs
1988 StandoutNobel
Serpentine superlattice quantum-wire arrays of (Al,Ga)As grown on vicinal GaAs substrates
1992 StandoutNobel
Optical properties of GaSb/Ga0.69Al0.31Sb single quantum wells grown by molecular beam epitaxy
1990
Pressure dependence of band offsets in InAs/Ga 1 − x In x
1997
Quantum Cascade Laser
1994 StandoutScience
Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAs
1997
A new semiconductor superlattice
1977 Nobel
Electronic structure of the [001] InAs-GaSb superlattice
1979
Local structures of III-V diluted magnetic semiconductorsGa 1 − x Mn x As
1998
Self-consistent dipole theory of heterojunction band offsets
1990
Molecular beam epitaxy
1975 Standout
Classical phase diffusion in small hysteretic Josephson junctions
1989 StandoutNobel
Photocurrent spectroscopy and study of subband parameters for heavy holes in nanoscale In0.53Ga0.47As/In0.52Al0.48As multiquantum well structures
1999
Spintronics: A Spin-Based Electronics Vision for the Future
2001 StandoutScience
Selective Transmission of High-Frequency Phonons by a Superlattice: The "Dielectric" Phonon Filter
1979 StandoutNobel
Quantum-well heterostructure lasers
1980
Fluxonium: Single Cooper-Pair Circuit Free of Charge Offsets
2009 StandoutScienceNobel
Optical property of InAsP/InP strained quantum wells grown on InP (111)B and (100) substrates
1994
Evidence for the Fractional Quantum Hall State atν = 1 7
1988 StandoutNobel
Magnetotransport properties ofp-type (In,Mn)As diluted magnetic III-V semiconductors
1992
Electrical characteristics and energy-band offsets in n-InAs0.89Sb0.11/n-GaSb heterojunctions grown by the liquid phase epitaxy technique
1989
Electrical properties and band offsets of InAs/AlSb n-N isotype heterojunctions grown on GaAs
1989 StandoutNobel
A new mechanism for negative differential conductivity in superlattices
1975 Nobel
Two-dimensional electrons-holes droplets in superlattices
1981
Electronic properties of InAsGaSb superlattices
1980 Nobel
Theory of the Bloch-wave oscillations in small Josephson junctions
1985
Density of States and de Haas—van Alphen Effect in Two-Dimensional Electron Systems
1985 StandoutNobel
Resonant tunneling in small current-biased Josephson junctions
1991 StandoutNobel
Quasi-one-dimensional electron gas and its magnetic depopulation in a quantum wire prepared by overgrowth on a cleaved edge of AlGaAs/GaAs multiple quantum wells
1993
Enhanced Spin Interactions in Digital Magnetic Heterostructures
1995
Nonmetal-metal-nonmetal transition and large negative magnetoresistance in (Ga, Mn)As/GaAs
1997
Single-electron transfer in metallic nanostructures
1992 StandoutNatureNobel
Far-infrared photoresponse of the InAs/GaInSb superlattice
1991 StandoutNobel
Raman scattering in GaSb-AlSb strained layer superlattices
1985 Nobel
Quenching of stimulated phonon emission in AlxGa1−xAs-GaAs quantum-well heterostructures
1981
Evaluation of some scattering times for electrons in unbiased and biased single- and multiple-quantum-well structures
1989
Growth and properties of (Ga, Mn) As: A new III–V diluted magnetic semiconductor
1997
Luminescence from InAsGaSb superlattices
1981 Nobel
Improved model-solid-theory calculations for valence-band offsets at semiconductor-semiconductor interfaces
1992
Electric-Field-Induced Localization and Oscillatory Electro-optical Properties of Semiconductor Superlattices
1988
The s,p-d exchange interaction in GaAs heavily doped with Mn
1996
Electronic Properties of a Semiconductor Superlattice II. Low Temperature Mobility Perpendicular to the Superlattice
1980
Type-II Quantum Dots: CdTe/CdSe(Core/Shell) and CdSe/ZnTe(Core/Shell) Heterostructures
2003 StandoutNobel
Electric-field-induced dissociation of excitons in semiconductor quantum wells
1985
Electric field dependence of optical absorption near the band gap of quantum-well structures
1985 Standout
Superlattice band structure in the envelope-function approximation
1981 Standout
Formation of an anomalous acoustic plasmon in spatially separated plasmas
1980
Electronic properties of two-dimensional systems
1982 Standout
One-dimensional electron transport on the surface channel of InAs quantum wells
1992
Observation of Magnetophonon Resonances in a Two-Dimensional Electronic System
1980 StandoutNobel
Works of L.L. Chang being referenced
Spin-flip relaxation time of conduction electrons inCd 1 − x Mn x
1990
Ge-GaAs superlattices by molecular beam epitaxy
1981 Nobel
Growth and transport properties of (Ga,Al)Sb barriers on InAs
1989
Observation of double cyclotoron resonance and interband transitions in InAs-GaSb multi-heterojunctions
1982 Nobel
Observation of semiconductor-semimetal transition in InAs-GaSb superlattices
1979 Nobel
New III-V diluted magnetic semiconductors (invited)
1991
Semimetallic InAs-GaSb superlattices to the heterojunction limit
1981 Nobel
III-V diluted magnetic semiconductor: Substitutional doping of Mn in InAs
1996
Effective mass determination of a highly doped InAs-GaSb superlattice using helicon wave propagation
1982 Nobel
Three-dimensional character of semimetallic InAs-GaSb superlattices
1981 Nobel
Variational calculations on a quantum well in an electric field
1983 Nobel
Cyclotron resonance in an InAs-GaSb superlattice
1979 Nobel
Semiconductor superlattices in high magnetic fields
1979 Nobel
Interdiffusion between GaAs and AlAs
1976
Heteroepitaxy of InAs quantum wells
1989
Mixing between heavy-hole and light-hole excitons in GaAs/Al x Ga 1 − x
1987 Nobel
Cyclotron-resonance oscillations in InAs quantum wells
1986
Pressure Dependence of Band Offsets in an InAs-GaSb Superlattice
1986 Nobel
Abstract: Observation of semiconductor–semimetal transition in InAs–GaSb superlattices
1979 Nobel
Molecular beam epitaxy of AlSb
1982 Nobel
GaAs-GaAlAs graded-index separate confinement heterostructure laser diodes selectively grown by molecular beam epitaxy on SiO2-masked substrates
1987
Interpretation of scanning high-energy electron diffraction measurements with application to GaAs surfaces
1973
Interband transitions from the photoreflectance of GaSb/AlSb multiple quantum wells
1989 Nobel
Diluted magnetic III–V semiconductor structures
1992
Lattice relaxation of InAs heteroepitaxy on GaAs
1987
One-Dimensional Conduction on the Cleaved Edge of InAs Quantum Wells
1992
Epitaxy of III–V diluted magnetic semiconductor materials
1990
Electron densities in InAs–AlSb quantum wells
1984 Nobel
Structures Grown by Molecular Beam Epitaxy
1973 StandoutNobel
Two-dimensional electronic structure in InAs-GaSb superlattices
1978 Nobel
Local structure about Mn atoms inIn 1 − x Mn x
1993