Standout Papers

Approaching the Schottky–Mott limit in van der W... 2010 2026 2015 2020 1.6k
  1. Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions (2018)
    Yuan Liu, Jian Guo et al. Nature
  2. High-speed graphene transistors with a self-aligned nanowire gate (2010)
    Lei Liao, Yung‐Chen Lin et al. Nature
  3. Two-dimensional antimonene single crystals grown by van der Waals epitaxy (2016)
    Jianping Ji, Xiufeng Song et al. Nature Communications
  4. Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics (2015)
    Xudong Wang, Peng Wang et al. Advanced Materials
  5. Graphene: An Emerging Electronic Material (2012)
    Nathan O. Weiss, Hailong Zhou et al. Advanced Materials
  6. Covalent Organic Frameworks with High Charge Carrier Mobility (2011)
    Shun Wan, Felipe Gándara et al. Chemistry of Materials
  7. Plasmon resonance enhanced multicolour photodetection by graphene (2011)
    Yuan Liu, Rui Cheng et al. Nature Communications
  8. Metal‐Ion‐Modified Black Phosphorus with Enhanced Stability and Transistor Performance (2017)
    Zhinan Guo, Si Chen et al. Advanced Materials
  9. High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h‐BN as a Tunneling Layer (2016)
    Jingli Wang, Qian Yao et al. Advanced Materials
  10. Roll-to-Roll Encapsulation of Metal Nanowires between Graphene and Plastic Substrate for High-Performance Flexible Transparent Electrodes (2015)
    Bing Deng, Po‐Chun Hsu et al. Nano Letters
  11. Efficient strain modulation of 2D materials via polymer encapsulation (2020)
    Zhiwei Li, Yawei Lv et al. Nature Communications
  12. Recent Progress on Electrical and Optical Manipulations of Perovskite Photodetectors (2021)
    Fang Wang, Xuming Zou et al. Advanced Science
  13. Monolithic three-dimensional tier-by-tier integration via van der Waals lamination (2024)
    Donglin Lu, Yang Chen et al. Nature

Immediate Impact

20 by Nobel laureates 58 from Science/Nature 233 standout
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Citing Papers

Developing fatigue-resistant ferroelectrics using interlayer sliding switching
2024 StandoutScience
Ballistic two-dimensional InSe transistors
2023 StandoutNature
67 intermediate papers

Works of Lei Liao being referenced

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions
2018 StandoutNature
High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h‐BN as a Tunneling Layer
2016 Standout
and 33 more

Author Peers

Author Last Decade Papers Cites
Lei Liao 21800 16882 8624 570 31.0k
Qing Zhang 16636 14691 5391 748 28.7k
Lian‐Mao Peng 18262 10809 7306 556 26.9k
Jianhua Hao 19707 10932 6987 421 25.5k
Kyeongjae Cho 20111 15085 5143 420 28.6k
Paolo Samorı́ 15800 12874 8088 525 26.6k
Humberto Terrones 27729 12083 4854 315 32.1k
Apparao M. Rao 20694 9324 7051 405 29.5k
Qian Wang 22499 12472 5060 679 31.9k
Xinran Wang 20794 14385 7119 394 28.5k
Deren Yang 17193 18145 4862 1.1k 28.1k

All Works

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