Citation Impact
Citing Papers
Evaluation of a hybrid pixel detector for electron microscopy
2003 StandoutNobel
Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy
2009
Probing carrier dynamics in nanostructures by picosecond cathodoluminescence
2005 Nature
Fundamentals of zinc oxide as a semiconductor
2009 Standout
Green luminescence of InGaN nanowires grown on silicon substrates by molecular beam epitaxy
2011
A review of Ga2O3 materials, processing, and devices
2018 Standout
Luminescence properties of defects in GaN
2005 Standout
Review—Ionizing Radiation Damage Effects on GaN Devices
2015
Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers
2006 StandoutNobel
Measurements with Si and GaAs pixel detectors bonded to photon counting readout chips
2001
Electron and hole traps in N-doped ZnO grown on p-type Si by metalorganic chemical vapor deposition
2007
Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires
2013 StandoutNobel
Optical characterization of III-nitrides
2002 StandoutNobel
A point defect complex related to the yellow luminescence in electron irradiated GaN
2001
Surface potential effect on excitons in AlGaN/GaN quantum well structures
2013 StandoutNobel
Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique
2014 StandoutNobel
Stacking Faults and Luminescence Property of InGaN Nanowires
2013 StandoutNobel
Effect of laser irradiation on the luminescence of Mg and Si-doped GaN films
1999
Cathodoluminescence study of deep ultraviolet quantum wells grown on maskless laterally epitaxial overgrown AlGaN
2004
Study of GaN nanowires converted fromβ-Ga2O3and photoconduction in a single nanowire
2017
Optoelectronic properties of GaN epilayers in the region of yellow luminescence
2006
Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates
2006 StandoutNobel
Effects of exciton localization on internal quantum efficiency of InGaN nanowires
2013 StandoutNobel
A hydrogen-related shallow donor in GaN?
2006 StandoutNobel
Photoemission electron microscopy using extreme ultraviolet attosecond pulse trains
2009 StandoutNobel
Review of radiation damage in GaN-based materials and devices
2013
Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells
2002 StandoutNobel
Luminescence spectroscopy of GaN in the high-temperature regime from room temperature to 900 °C
2000
Optical excitations in electron microscopy
2010 Standout
Radiation effects in GaN materials and devices
2012
Transverse and longitudinal space-charge-induced broadenings of ultrafast electron packets
2005
Defect-Related Donors, Acceptors, and Traps in GaN
2001
Nature of yellow luminescence band in GaN grown on Si substrate
2014 StandoutNobel
Observation of a hydrogenic donor in the luminescence of electron-irradiated GaN
2003
Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy
2006 StandoutNobel
Works of L. Polenta being referenced
Dislocation-related electron capture behaviour of traps in n-type GaN
2002
Defect characterization in GaN: Possible influence of dislocations in the yellow-band features
2007
Analysis of the active layer in SI GaAs Schottky diodes
1998
Investigation on Localized States in GaN Nanowires
2008
Time-resolved cathodoluminescence and photocurrent study of the yellow band in Si-doped GaN
2003
Light-Excitation-Based Spectroscopy of Electronic Defects in Novel Materials
1999
On the main irradiation-induced defect in GaN
2000
Defect Distribution along Single GaN Nanowhiskers
2006
Cathodoluminescence and photoinduced current spectroscopy studies of defects inCd 0.8 Zn 0.2
1996
Deep levels and irradiation effects in n-GaN
2000
Yellow and green bands in GaN by resolved spectral photoconductivity
2005