L. Miotti

Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications

Annealing condition optimization and electrical characterization of amorphous LaAlO3∕GaAs metal-oxide-semiconductor capacitors

Advanced polyimide materials: Syntheses, physical properties and applications

High dielectric constant oxides

A review of Ga2O3 materials, processing, and devices

Oxygen diffusion in atomic layer deposited ZrO2 and HfO2 thin films on Si (100)

Chemical reaction and metallic cluster formation by annealing-temperature control in ZrO2 gate dielectrics on Si

Atomic Layer Deposition: An Overview

Energy band offsets of dielectrics on InGaZnO4

Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

High dielectric constant gate oxides for metal oxide Si transistors

Solution-Processed Metal Nanowire Mesh Transparent Electrodes

Atomic Layer Deposition of Hafnium Dioxide Films Using Hafnium Bis(2‐butanolate)bis(1‐methoxy‐2‐methyl‐2‐propanolate) and Water

Reaction–diffusion in high-k dielectrics on Si

Rare-earth oxide thin films as gate oxides in MOSFET transistors

Spinodal decomposition in amorphous metal–silicate thin films: Phase diagram analysis and interface effects on kinetics

The restaurant at the end of the random walk: recent developments in the description of anomalous transport by fractional dynamics

Interface structure and non-stoichiometry in HfO2 dielectrics

Properties of Oxide Film Atomic Layer Deposited from Tetraethoxy Silane, Hafnium Halides, and Water

Effect of nitrogen on band alignment in HfSiON gate dielectrics

Interface reactions in ZrO2 based gate dielectric stacks

Atomic layer deposition of HfO2 thin films and nanolayered HfO2–Al2O3–Nb2O5 dielectrics

Composition, atomic transport, and chemical stability of ZrAlxOy ultrathin films deposited on Si(001)

Thermal stability and diffusion in gadolinium silicate gate dielectric films

Integrity of hafnium silicate/silicon dioxide ultrathin films on Si

Environment of hafnium and silicon in Hf-based dielectric films: An atomistic study by x-ray absorption spectroscopy and x-ray diffraction

Oxygen reaction-diffusion in metalorganic chemical vapor deposition HfO2 films annealed in O2

Ion beam studies of high-k ultrathin films deposited on Si

Exchange-diffusion reactions in HfSiON during annealing studied by Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling

Annealing of ZrAl[sub x]O[sub y] Ultrathin Films on Si in a Vacuum or in O[sub 2]

Stability of zirconium silicate films on Si under vacuum and O2 annealing