Standout Papers

Oxygen vacancy model for the E1′ center in SiO2 1974 2026 1991 2008 432
  1. Oxygen vacancy model for the E1′ center in SiO2 (1974)
    F. J. Feigl, W. Beall Fowler et al. Solid State Communications

Immediate Impact

7 by Nobel laureates 4 from Science/Nature 56 standout
Sub-graph 1 of 23

Citing Papers

Defect engineering of oxide perovskites for catalysis and energy storage: synthesis of chemistry and materials science
2021 Standout
Defect Passivation in Lead‐Halide Perovskite Nanocrystals and Thin Films: Toward Efficient LEDs and Solar Cells
2021 Standout
2 intermediate papers

Works of Kwok L. Yip being referenced

The Lattice Vacancy in Si and Ge
1974
Electronic structure of SiO2. II. Calculations and results
1974
and 1 more

Author Peers

Author Last Decade Papers Cites
Kwok L. Yip 234 502 14 384 363 20 948
C. M. Nelson 159 631 1 321 356 16 929
Ryoichi Tohmon 177 829 4 483 554 17 1.1k
G. T. Surratt 464 501 2 237 147 22 817
J. A. McMillan 126 602 6 205 160 43 1.0k
Ajit Ram Verma 214 650 1 445 150 39 1.2k
M. L. Slade 397 782 1 587 234 31 1.2k
Luigi Giacomazzi 167 414 9 372 392 31 795
Stuart M. Jacobsen 266 549 2 475 178 39 873
Robert J. Friauf 271 556 209 73 33 914
Herbert N. Hersh 239 623 2 319 96 36 929

All Works

Loading papers...

Rankless by CCL
2026