Citation Impact
Citing Papers
Electronics based on two-dimensional materials
2014 Standout
Black phosphorus field-effect transistors
2014 Standout
Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
2014 Standout
Attosecond nonlinear polarization and light–matter energy transfer in solids
2016 StandoutNatureNobel
Efficient silicon light-emitting diodes
2001 Nature
Optical-field-induced current in dielectrics
2012 StandoutNatureNobel
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2004 StandoutNature
Scaling the Si MOSFET: from bulk to SOI to bulk
1992
Radiation-induced soft errors in advanced semiconductor technologies
2005 Standout
Attosecond metrology: from electron capture to future signal processing
2014 StandoutNobel
Stimulated emission in a nanostructured silicon pn junction diode using current injection
2004
Molecular Electronics with Carbon Nanotubes
2002 Standout
PSP: An Advanced Surface-Potential-Based MOSFET Model for Circuit Simulation
2006
Methylammonium Bismuth Iodide as a Lead‐Free, Stable Hybrid Organic–Inorganic Solar Absorber
2015 StandoutNobel
Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits
2003 Standout
The Past, Present, and Future of Silicon Photonics
2006 Standout
Single particle-induced latchup
1996
Embedded System Design
2010 Standout
Optical-field-induced current in dielectrics
2013 StandoutNobel
Strong-field and attosecond physics in solids
2014 StandoutNobel
Organic Thin Film Transistors for Large Area Electronics
2002 Standout
Colloquium: Strong-field phenomena in periodic systems
2018 StandoutNobel
Electronic circuit reliability modeling
2006
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
1990 Standout
Fundamentals of Modern VLSI Devices
2009 Standout
Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors
2007
Low-voltage hot-electron currents and degradation in deep-submicrometer MOSFETs
1990
1.3-μm light-emitting diode from silicon electron irradiated at its damage threshold
1987
Scaling the Si metal-oxide-semiconductor field-effect transistor into the 0.1-μm regime using vertical doping engineering
1991
Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs
2000
Works of K.W. Terrill being referenced
Two-dimensional analytic modeling of very thin SOI MOSFETs
1990
An analytical model for the channel electric field in MOSFET's with graded-drain structures
1984
Hot-electron-induced MOSFET degradation—Model, monitor, and improvement
1985
Substrate resistance calculation for latchup modeling
1984
Photon generation in forward-biased silicon p-n junctions
1983
Hot-Electron-Induced MOSFET Degradation - Model, Monitor, and Improvement
1985