K. Suzuki

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Transition metal-catalysed molecular n-doping of organic semiconductors

Single-Event Damage Observed in GaN-on-Si HEMTs for Power Control Applications

High-Performance Top-Gate Carbon Nanotube Field-Effect Transistors and Complementary Metal–Oxide–Semiconductor Inverters Realized by Controlling Interface Charges