Standout Papers
Citation Impact
Citing Papers
Effects of Si ion implantation and post-annealing on yellow luminescence from GaN
2002
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire
1997
Deep acceptors trapped at threading-edge dislocations in GaN
1998
Properties of zinc acceptor and exciton bound to zinc in ammonothermal GaN
2002
Exciton and donor - acceptor recombination in undoped GaN on Si(111)
1997
A GaN bulk crystal with improved structural quality grown by the ammonothermal method
2007 StandoutNobel
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Heterogeneous photocatalyst materials for water splitting
2008 Standout
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Hydrogen Local Vibrational Modes in Zinc Oxide
2003
Congruent melting of gallium nitride at 6 GPa and its application to single-crystal growth
2003 StandoutNobel
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Entropy-Driven Stabilization of a Novel Configuration for Acceptor-Hydrogen Complexes in GaN
2001
Depth profiling of GaN by cathodoluminescence microanalysis
1999
Growth and applications of Group III-nitrides
1998
Direct experimental evidence for the role of oxygen in the luminescent properties of GaN
1999
Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study
2002
Luminescence of Acceptors in Mg-Doped GaN
2013 StandoutNobel
Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology
1999
Free-carrier effects in gallium nitride epilayers: Valence-band dispersion
2001
Optical Properties of Strained AlGaN and GaInN on GaN
1997 StandoutNobel
Temperature dependence of excitonic transitions in a-plane AlN epitaxial layers
2009 StandoutNobel
Structural and vibrational properties of GaN
1999 StandoutNobel
Passivation and Doping due to Hydrogen in III-Nitrides
2001
The influence of Si-doping to the growth rate and yellow luminescence of GaN grown by MOCVD
2001
Analysis of Time-Resolved Donor-Acceptor-Pair Recombination in MBE and MOVPE Grown GaN : Mg
2001
Gallium vacancies and the growth stoichiometry of GaN studied by positron annihilation spectroscopy
1998
Diffusivity of native defects in GaN
2004
Origin of the red luminescence in Mg-doped GaN
2006
Temperature quenching of photoluminescence intensities in undoped and doped GaN
1999
Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template
2001
Quantum ground state and single-phonon control of a mechanical resonator
2010 StandoutNatureNobel
Role of open volume defects in Mg-doped GaN films studied by positron annihilation spectroscopy
2005
Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques
2005 StandoutNobel
Exciton binding energies and band gaps in GaN bulk crystals
1998
Theoretical description of H behavior in GaN p-n junctions
2001
Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN: On the nature of yellow luminescence
2002
Layer‐by‐Layer J‐Aggregate Thin Films with a Peak Absorption Constant of 106 cm–1
2005
Yellow and green luminescence in a freestanding GaN template
2001
Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
1997 StandoutNobel
Acceptors in undoped GaN studied by transient photoluminescence
2002
Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN
2001 StandoutNobel
Transient photoluminescence of shallow donor bound excitons in GaN
2010
Nonparabolicity of the conduction band of wurtzite GaN
2003 Nobel
Luminescence properties of defects in GaN
2005 Standout
Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals
1998
Internal structure of acceptor-bound excitons in wide-band-gap wurtzite semiconductors
2010
Calculated properties of point defects in Be-doped GaN
2003
First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: Comparison of local and gradient-corrected density-functional theory
2001
Spintronics: Fundamentals and applications
2004 Standout
A comprehensive review of ZnO materials and devices
2005 Standout
Photoluminescence studies of excitonic transitions in GaN epitaxial layers
1998
Dynamics of trapping on donors and relaxation of the B‐exciton in GaN
2002
Structural, electrical, and optical properties of defects in Si-doped GaN grown by molecular-beam epitaxy on hydride vapor phase epitaxy GaN on sapphire
2002
Local vibrational modes and compensation effects in Mg‐doped GaN
2003
Time-resolved spectroscopy of strained GaN/AlN/6H–SiC heterostructures grown by metalorganic chemical vapor deposition
2001 StandoutNobel
Optically detected magnetic-resonance mapping on the yellow luminescence in GaN
2000
Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement
2001
Relationship between crystallographic orientation and 3.42 eV emission bands in GaN grown by HVPE on Si substrate
1999
Optical properties of tensile-strained wurtzite GaN epitaxial layers
1997 StandoutNobel
Thermal treatment effect of the GaN buffer layer on the photoluminescence characteristics of the GaN epilayer
1999
Electron-beam dissociation of the MgH complex in p-type GaN
2002
Selective excitation and thermal quenching of the yellow luminescence of GaN
1999
Some effects of oxygen impurities on AlN and GaN
2002
Optical characterization of III-nitrides
2002 StandoutNobel
Positron studies of MBE-grown gallium nitride
1999
Resonant interaction of LO phonons with excited donor states in GaN
2002
Pressure dependence of the dielectric and lattice-dynamical properties of GaN and AlN
2000
A point defect complex related to the yellow luminescence in electron irradiated GaN
2001
Selective excitation of the yellow luminescence of GaN
1999
NK
1997 StandoutNobel
Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams
2001 StandoutNobel
Spin lifetimes of electrons injected into GaAs and GaN
2003
Comprehensive characterization of hydride VPE grown GaN layers and templates
2001
III-V nitrides—important future electronic materials
1999
Photoluminescence of GaN: Effect of electron irradiation
1998 StandoutNobel
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
2006 StandoutNobel
Structural and optical properties of InGaN/GaN layers close to the critical layer thickness
2002
Chemical origin of the yellow luminescence in GaN
2002
Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
1997 StandoutNobel
Electronic and vibrational properties of Mg- and O-related complexes in GaN
2001
Investigation of optical metastability in GaN using photoluminescence spectroscopy
2003
Theoretical analysis of d electron effects on the electronic properties of wurtzite and zincblende GaN
2003
Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition
2002
Spin-exchange splitting of excitons in GaN
2001
Vacancies as compensating centers in bulk GaN: doping effects
2002
GaN homoepitaxial layers grown by metalorganic chemical vapor deposition
1999
Optical properties of wurtzite GaN epilayers grown onA
1998 StandoutNobel
Color-Selective Photocurrent Enhancement in Coupled J-Aggregate/Nanowires Formed in Solution
2011 StandoutNobel
Optical characterization of bulk GaN grown by a Na–Ga melt technique
2002
Cooling dynamics of excitons in GaN
1999 StandoutNobel
Growth, Doping and Characterization of AlxGa1−xN Thin Film Alloys on 6H-SiC(0001) Substrates
1996 StandoutNobel
Identification of hydrogen configurations inp-type GaN through first-principles calculations of vibrational frequencies
2003
ODMR of bound excitons in Mg-doped GaN
1999
Dynamics of excitonic recombination and interactions in homoepitaxial GaN
2002
Nature of acceptor states in magnesium-doped gallium nitride
2005
Temperature-varied photoluminescence and magnetospectroscopy study of near-band-edge emissions in GaN
2001
Optical and structural properties of lateral epitaxial overgrown GaN layers
1998 StandoutNobel
Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films
1997 StandoutNobel
Free excitons with n=2 in bulk GaN
1997
Near Defect Free GaN Substrates
1999
Evolution of stress relaxation and yellow luminescence in GaN/sapphire by Si incorporation
1997
Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing
2001
Additional phonon modes and close satellite valleys crucialfor electron transport in hexagonal gallium nitride
2004
Properties of the main Mg-related acceptors in GaN from optical and structural studies
2014 StandoutNobel
Simultaneous observation of luminescence and dissociation processes of Mg–H complex for Mg-doped GaN
2002 StandoutNobel
First-principles study on electronic and elastic properties of BN, AlN, and GaN
1998
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Effect of strain on GaN exciton spectra
1996
Electronic band structures and effective-mass parameters of wurtzite GaN and InN
1998
First-Principles Studies of the Structural and Electronic Properties of the (Ga1-xZnx)(N1-xOx) Solid Solution Photocatalyst
2008
ODEPR and yellow luminescence intensity in GaN under high pressure
2001
The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
1998 StandoutScienceNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Predicted band-gap pressure coefficients of all diamond and zinc-blende semiconductors: Chemical trends
1999
Origin of defect-related photoluminescence bands in doped and nominally undoped GaN
1999
Vacancy Defects as Compensating Centers in Mg-Doped GaN
2003
Nature of the 2.8-eV photoluminescence band in Si-doped GaN
2000
Thermodynamical properties of III–V nitrides and crystal growth of GaN at high N2 pressure
1997
Identification of Si and O donors in hydride-vapor-phase epitaxial GaN
2001
Structural and optical properties of thick freestanding GaN templates
2001
Origin of the Q=11 meV bound exciton in GaN
1997
Variation of GaN valence bands with biaxial stress and quantification of residual stress
1997 StandoutNobel
The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals
1999
Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy
2007 StandoutNobel
Spontaneous Ordering in Bulk GaN:Mg Samples
1999
Optical and structural studies of homoepitaxially grown m-plane GaN
2012
Ga vacancies and grain boundaries in GaN
2003
Phonons and related crystal properties from density-functional perturbation theory
2001 Standout
Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN
2003
Polariton and free-exciton-like photoluminescence in ZnO
2001
Strain-related phenomena in GaN thin films
1996 StandoutNobel
Pressure dependence of the blue luminescence in Mg-doped GaN
2000
Photoluminescence of GaN Grown by Molecular Beam Epitaxy on Freestanding GaN Template
2002
Homoepitaxial growth of GaN using molecular beam epitaxy
1996
Thermal stability of isolated and complexed Ga vacancies in GaN bulk crystals
2001
Low-temperature luminescence of exciton and defect states in heteroepitaxial GaN grown by hydride vapor phase epitaxy
1999
Free Excitons in GaN
1996 StandoutNobel
Spatial distribution of electron concentration and strain in bulk GaN single crystals - relation to growth mechanism
1996
Bound excitons in GaN
2001
Effect of silicon and oxygen doping on donor bound excitons in bulk GaN
2011
Gallium nitride materials - progress, status, and potential roadblocks
2002 StandoutNobel
Free and Bound Excitons in GaN Epitaxial Films
1996
Biaxial strain dependence of exciton resonance energies in wurtzite GaN
1997 StandoutNobel
Comparison between structural properties of bulk GaN grown in liquid Ga under high N pressure and GaN grown by other methods
2002
Emission of ballistic photoelectrons from p-GaN(Cs,O) with the effective negative electron affinity
2007
Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy
2004
Observation of Ga vacancies and negative ions in undoped and Mg-doped GaN bulk crystals
1999
Free excitons in wurtzite GaN
2001
Properties of strained wurtzite GaN and AlN:Ab initiostudies
2002
Optical and magnetic resonance studies of Mg-doped GaN homoepitaxial layers grown by molecular beam epitaxy
2007
Pressure and temperature effects on optical transitions in cubic GaN
1999
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN
2000
Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth
2000 StandoutNobel
Isotope effects on the rate of electron-beam dissociation of Mg–H complexes in GaN
2002
Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy
2003
On the hole effective mass and the free hole statistics in wurtzite GaN
2003
Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN
2003
Effect of reactive ion etching on the yellow luminescence of GaN
1999
Advanced Nanoarchitectures for Solar Photocatalytic Applications
2011 Standout
Donor-related recombination processes in hydride-vapor-phase epitaxial GaN
2002
Growth of GaN Single Crystals under High Nitrogen Pressures and their Characterization
1999
Magneto-optical studies of free-standing hydride-vapor-phase epitaxial GaN
2002
Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy
2014 StandoutNobel
Recombination of free and bound excitons in GaN
2008
High quality AlN grown on SiC by metal organic chemical vapor deposition
2008 StandoutNobel
High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy
1998
Equilibrium state of hydrogen in gallium nitride: Theory and experiment
2000
Band parameters for nitrogen-containing semiconductors
2003 Standout
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Recombination of excitons bound to oxygen and silicon donors in freestanding GaN
2002
Electronic structures of GaN edge dislocations
2000
Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques
2004 StandoutNobel
Dominant shallow acceptor enhanced by oxygen doping in GaN
2006 StandoutNobel
Influence of Dopants on Defect Formation in GaN
2001
Observation of a hydrogenic donor in the luminescence of electron-irradiated GaN
2003
Compositional dependence of the strain-free optical band gap in InxGa1−xN layers
2001
Mg in GaN: the structure of the acceptor and the electrical activity
2003
Ionized donor bound excitons in GaN
1997
Ga vacancies in electron irradiated GaN: introduction, stability and temperature dependence of positron trapping
2001
Reflectance and emission spectra of excitonic polaritons in GaN
1999
Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN
2001
Works of K. Pakuła being referenced
Fine Structure of Effective Mass Acceptors in Gallium Nitride
2003
X-ray Diffraction Study of Composition Inhomogeneities in Ga1-xInxN Thin Layers
2001
Photoluminescence Dynamics in the Near Bandgap Region of Homoepitaxial GaN Layers
1997
Lattice parameters of gallium nitride
1996
Exciton Dynamics in Homoepitaxial GaN
1998
Thermal Expansion of GaN Bulk Crystals and Homoepitaxial Layers
1996
Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates
1996
Impurity-Related Luminescence of Homoepitaxial GaN Studied with High Magnetic Fields
1998
Pressure and Time‐Resolved Photoluminescence Studies of Mg‐Doped and Undoped GaN
1996
GaN Crystals Grown in the Increased Volume High-Pressure Reactors
1996
Infrared spectroscopy of Mg-H local vibrational mode in GaN with polarized light
2000
Coupling of LO Phonons to Excitons in GaN
1996
Observation of Native Ga Vacancies in GaN by Positron Annihilation
1997
Effect of pressure on exciton energies of homoepitaxial GaN
1998
Exciton dynamics in homoepitaxial GaN
1997
Surface morphology of as grown and annealed bulk GaN crystals
1996
Magnetopolaron effect on shallow donors in GaN
2006
Symmetry of excitons in GaN
1999
Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers
2001
Far-Infrared Magnetospectroscopy of Shallow Donors in GaN
1998
Far-infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homoepitaxial layers
2000
Characterization of InGaN/GaN heterostructures by means of RBS/channeling
2000
Homoepitaxial layers of gallium nitride grown by metalorganic vapour phase epitaxy
1997
Reduction of dislocation density in heteroepitaxial GaN: role of SiH4 treatment
2004
Observation Of Native Ga Vacancies In Gan By Positron Annihilation
1997
Emission Due to Exciton Scattering by LO-Phonons in Gallium Nitride
1999
High Resistivity GaN Single Crystalline Substrates
1997
Localized vibrational modes of carbon-hydrogen complexes in GaN
1999
Polarised Magnetoluminescence of Excitons in Homoepitaxial GaN Layers
1999
Structural Defects in Heteroepitaxial and Homoepitaxial GaN
1995 StandoutNobel
Effects of defect scattering on the photoluminescence of exciton-polaritons in n-GaN
1998 StandoutNobel
Convergent Beam Electron Diffraction and Transmission Electron Microscopy Study of Interfacial Defects in Gallium Nitride Homoepitaxial Films
1997
Electron effective mass in hexagonal GaN
1999
Two-Electron Transition in Homoepitaxial GaN Layers
1997
Polariton effects in reflectance and emission spectra of homoepitaxial GaN
1997
Structural and Optical Properties of Homoepitaxial GaN Layers
1996