Citation Impact
Citing Papers
Transport properties of highly conductive n-type Al-rich AlxGa1−xN(x⩾0.7)
2004
Synthesis and properties of nanodiamonds produced by HPHT carbonization of 1-fluoroadamantane
2023 StandoutNobel
Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
2011 StandoutNobel
Handheld deep ultraviolet emission device based on aluminum nitride quantum wells and graphene nanoneedle field emitters
2012 StandoutNobel
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz
2017
Narrow-band red-emitting Sr[LiAl3N4]:Eu2+ as a next-generation LED-phosphor material
2014 Standout
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
2011 Standout
Numerical Investigation on the Carrier Transport Characteristics of AlGaN Deep-UV Light-Emitting Diodes
2016
Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes
2010 StandoutNobel
Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells
2010
Highly improved performance of a 350nm ultraviolet light-emitting diode containing AlxGa1−xN/AlyGa1−yN distributed Bragg reflectors
2004
Hydrogenation effects on carrier transport in boron-doped ultrananocrystalline diamond/amorphous carbon films prepared by coaxial arc plasma deposition
2015
Growth and laser-assisted liftoff of low dislocation density AlN thin films for deep-UV light-emitting diodes
2004 StandoutNobel
High Performance AlGaInN Ultraviolet Light-Emitting Diode at the 340 nm Wavelength
2004
Effects of quantum barriers and electron-blocking layer in deep-ultraviolet light-emitting diodes
2017
A review of Ga2O3 materials, processing, and devices
2018 Standout
A Hybrid Micro-Pixel Based Deep Ultraviolet Light-Emitting Diode Lamp
2010
Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
2005
Control of growth mode in Mg-doped GaN/AlN heterostructure
2014 StandoutNobel
Recombination dynamics of a 268nm emission peak in Al0.53In0.11Ga0.36N∕Al0.58In0.02Ga0.40N multiple quantum wells
2006 StandoutNobel
200 nm deep ultraviolet photodetectors based on AlN
2006
Indium–Tin Oxide/Al Reflective Electrodes for Ultraviolet Light-Emitting Diodes
2012 StandoutNobel
High‐performance UV emitter grown on high‐crystalline‐quality AlGaN underlying layer
2009 StandoutNobel
Epitaxial lateral overgrowth of AlxGa1−xN (x>0.2) on sapphire and its application to UV-B-light-emitting devices
2006 StandoutNobel
Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy
2007 StandoutNobel
AlGaN Deep-Ultraviolet Light-Emitting Diodes
2005
Growth and design of deep-UV (240–290nm) light emitting diodes using AlGaN alloys
2004
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emitting Diodes
2004
Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositions
2009
Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
2011 StandoutNobel
Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels
2004
High-efficiency 269 nm emission deep ultraviolet light-emitting diodes
2004
Unique optical properties of AlGaN alloys and related ultraviolet emitters
2004
High-power deep ultraviolet light-emitting diodes basedon a micro-pixel design
2004
Deep ultraviolet light‐emitting diodes
2006
Laser lift-off technique for freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes
2014 StandoutNobel
Optical properties of extended and localized states in m-plane InGaN quantum wells
2013 StandoutNobel
Ce3+-Doped garnet phosphors: composition modification, luminescence properties and applications
2016 Standout
Nanocrystals of Cesium Lead Halide Perovskites (CsPbX3, X = Cl, Br, and I): Novel Optoelectronic Materials Showing Bright Emission with Wide Color Gamut
2015 Standout
Room-Temperature Stimulated Emission from AlN at 214 nm
2006
High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN
2007 StandoutNobel
Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes
2011
Extremely Low-Resistivity and High-Carrier-Concentration Si-Doped Al0.05Ga0.95N
2013 StandoutNobel
Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laser
2004
Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors
2013 StandoutNobel
Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
2010
Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques
2007 StandoutNobel
AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
2011 StandoutNobel
Improved quality nonpolar a ‐plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO)
2008 StandoutNobel
Phosphors in phosphor-converted white light-emitting diodes: Recent advances in materials, techniques and properties
2010 Standout
Characterization of InGaN-based nanorod light emitting diodes with different indium compositions
2012
Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy
2007 StandoutNobel
High‐efficiency AlGaN based UV emitters grown on high‐crystalline‐quality AlGaN using grooved AlN layer on sapphire substrate
2007 StandoutNobel
Improvement of Al-Polar AlN Layer Quality by Three-Stage Flow-Modulation Metalorganic Chemical Vapor Deposition
2008
Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes
2017
Recent progress in nonpolar LEDs as polarized light emitters
2008 StandoutNobel
292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base
2003 StandoutNobel
Al- and N-polar AlN layers grown on c-plane sapphire substrates by modified flow-modulation MOCVD
2007
Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra
2013 StandoutNobel
Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
2011 StandoutNobel
Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays
2014 StandoutNobel
250 nm AlGaN light-emitting diodes
2004
Indium–Tin Oxide/Al Reflective Electrodes for Ultraviolet Light-Emitting Diodes
2012 StandoutNobel
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
2009 StandoutNobel
Freestanding Highly Crystalline Single Crystal AlN Substrates Grown by a Novel Closed Sublimation Method
2011 StandoutNobel
247 nm solar-blind ultraviolet p-i-n photodetector
2006
AlGaN -based 280nm light-emitting diodes with continuous wave powers in excess of 1.5mW
2004
Correlation between optical and electrical properties of Mg-doped AlN epilayers
2006
Development of high efficiency 255–355 nm AlGaN‐based light‐emitting diodes
2011 StandoutNobel
Concentrating Properties of Nitride-Based Solar Cells Using Different Electrodes
2013 StandoutNobel
III–Nitride UV Devices
2005
Novel UV devices on high-quality AlGaN using grooved underlying layer
2009 StandoutNobel
AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy
2011
High quality AlN grown on SiC by metal organic chemical vapor deposition
2008 StandoutNobel
Growth of AlN by the Chemical Vapor Reaction Process
2005 StandoutNobel
Tuning the Optical Properties of Cesium Lead Halide Perovskite Nanocrystals by Anion Exchange Reactions
2015 Standout
Electrical and optical properties of Mg-doped Al0.7Ga0.3N alloys
2005
Ultraviolet light-emitting diodes based on group three nitrides
2008
Combination of Indium–Tin Oxide and SiO2/AlN Dielectric Multilayer Reflective Electrodes for Ultraviolet-Light-Emitting Diodes
2013 StandoutNobel
Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
2014 Standout
Works of K. Mayes being referenced
Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm
2002
4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes
2003
High quantum efficiency AlGaN solar-blind p-i-n photodiodes
2004
Growth of deep-UV light-emitting diodes by metalorganic chemical vapor deposition
2004
High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well
2004
Photoluminescence study of AlGaN-based 280 nm ultraviolet light-emitting diodes
2003
High-quantum-efficiency solar-blind photodetectors
2004
Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN substrate and sapphire
2002